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Class Information
Number: 438/693
Name: Semiconductor device manufacturing: process > Chemical etching > Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.) > Combined mechanical and chemical material removal > Simultaneous (e.g., chemical-mechanical polishing, etc.) > Utilizing particulate abradant
Description: Processes wherein the mechanical material removal is affected through the use of a particulate abrasive material.


Patents under this class:
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Patent Number Title Of Patent Date Issued
5935278 Abrasive composition for magnetic recording disc substrate Aug. 10, 1999
5934978 Methods of making and using a chemical-mechanical polishing slurry that reduces wafer defects Aug. 10, 1999
5934977 Method of planarizing a workpiece Aug. 10, 1999
5932486 Apparatus and methods for recirculating chemical-mechanical polishing of semiconductor wafers Aug. 3, 1999
5928962 Process for forming a semiconductor device Jul. 27, 1999
5922620 Chemical-mechanical polishing (CMP) method for controlling polishing rate using ionized water, and CMP apparatus Jul. 13, 1999
5916412 Apparatus for and method of polishing workpiece Jun. 29, 1999
5916453 Methods of planarizing structures on wafers and substrates by polishing Jun. 29, 1999
5916855 Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films Jun. 29, 1999
5916819 Planarization fluid composition chelating agents and planarization method using same Jun. 29, 1999
5914275 Polishing apparatus and method for planarizing layer on a semiconductor wafer Jun. 22, 1999
5910022 Method and system for tungsten chemical mechanical polishing for unplanarized dielectric surfaces Jun. 8, 1999
5910846 Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers Jun. 8, 1999
5911111 Polysilicon polish for patterning improvement Jun. 8, 1999
5897375 Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture Apr. 27, 1999
5896870 Method of removing slurry particles Apr. 27, 1999
5893756 Use of ethylene glycol as a corrosion inhibitor during cleaning after metal chemical mechanical polishing Apr. 13, 1999
5893754 Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers Apr. 13, 1999
5893753 Vibrating polishing pad conditioning system and method Apr. 13, 1999
5885899 Method of chemically mechanically polishing an electronic component using a non-selective ammonium hydroxide slurry Mar. 23, 1999
5885334 Polishing fluid composition and polishing method Mar. 23, 1999
5882539 Wafer processing method and equipment therefor Mar. 16, 1999
5879226 Method for conditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers Mar. 9, 1999
5876490 Polish process and slurry for planarization Mar. 2, 1999
5877089 Slurry containing manganese oxide Mar. 2, 1999
5866480 Method and apparatus for polishing semiconductor substrate Feb. 2, 1999
5863838 Method for chemically-mechanically polishing a metal layer Jan. 26, 1999
5863307 Method and slurry composition for chemical-mechanical polish (CMP) planarizing of copper containing conductor layers Jan. 26, 1999
5861054 Polishing slurry Jan. 19, 1999
5861055 Polishing composition for CMP operations Jan. 19, 1999
5858813 Chemical mechanical polishing slurry for metal layers and films Jan. 12, 1999
5855735 Process for recovering substrates Jan. 5, 1999
5854093 Direct attachment of silicon chip to circuit carrier Dec. 29, 1998
5854133 Method for manufacturing a semiconductor device Dec. 29, 1998
5851894 Method of vertically integrating microelectronic systems Dec. 22, 1998
5840629 Copper chemical mechanical polishing slurry utilizing a chromate oxidant Nov. 24, 1998
5834377 In situ method for CMP endpoint detection Nov. 10, 1998
5834375 Chemical-mechanical polishing planarization monitor Nov. 10, 1998
5827395 Polishing pad used for polishing silicon wafers and polishing method using the same Oct. 27, 1998
5827781 Planarization slurry including a dispersant and method of using same Oct. 27, 1998
5804513 Abrasive composition and use of the same Sep. 8, 1998
5798302 Low friction polish-stop stratum for endpointing chemical-mechanical planarization processing of semiconductor wafers Aug. 25, 1998
5792709 High-speed planarizing apparatus and method for chemical mechanical planarization of semiconductor wafers Aug. 11, 1998
5783489 Multi-oxidizer slurry for chemical mechanical polishing Jul. 21, 1998
5773364 Method for using ammonium salt slurries for chemical mechanical polishing (CMP) Jun. 30, 1998
5770095 Polishing agent and polishing method using the same Jun. 23, 1998
5767827 Reflective type active matrix display panel and method of manufacturing same Jun. 16, 1998
5767016 Method of forming a wiring layer on a semiconductor by polishing with treated slurry Jun. 16, 1998
5763325 Fabrication process of a semiconductor device using a slurry containing manganese oxide Jun. 9, 1998
5759917 Composition for oxide CMP Jun. 2, 1998

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