| |
 |
|
Class Information
Number: 438/693
Name: Semiconductor device manufacturing: process > Chemical etching > Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.) > Combined mechanical and chemical material removal > Simultaneous (e.g., chemical-mechanical polishing, etc.) > Utilizing particulate abradant
Description: Processes wherein the mechanical material removal is affected through the use of a particulate abrasive material.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6127238 |
Plasma enhanced chemical vapor deposited (PECVD) silicon nitride barrier layer for high density plasma chemical vapor deposited (HDP-CVD) dielectric layer |
Oct. 3, 2000 |
| 6124207 |
Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurries |
Sep. 26, 2000 |
| 6123088 |
Method and cleaner composition for stripping copper containing residue layers |
Sep. 26, 2000 |
| 6120571 |
Polishing agent for semiconductor and method for its production |
Sep. 19, 2000 |
| 6117748 |
Dishing free process for shallow trench isolation |
Sep. 12, 2000 |
| 6117775 |
Polishing method |
Sep. 12, 2000 |
| 6117783 |
Chemical mechanical polishing composition and process |
Sep. 12, 2000 |
| 6117779 |
Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint |
Sep. 12, 2000 |
| 6114248 |
Process to reduce localized polish stop erosion |
Sep. 5, 2000 |
| 6114215 |
Generating non-planar topology on the surface of planar and near-planar substrates |
Sep. 5, 2000 |
| 6114249 |
Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity |
Sep. 5, 2000 |
| 6114247 |
Polishing cloth for use in a CMP process and a surface treatment thereof |
Sep. 5, 2000 |
| 6110832 |
Method and apparatus for slurry polishing |
Aug. 29, 2000 |
| 6110830 |
Methods of reducing corrosion of materials, methods of protecting aluminum within aluminum-comprising layers from electrochemical degradation during semiconductor processing methods of forming |
Aug. 29, 2000 |
| 6110396 |
Dual-valent rare earth additives to polishing slurries |
Aug. 29, 2000 |
| 6106728 |
Slurry recycling system and method for CMP apparatus |
Aug. 22, 2000 |
| 6108092 |
Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers |
Aug. 22, 2000 |
| 6107203 |
Chemical mechanical polishing system and method therefor |
Aug. 22, 2000 |
| 6103627 |
Treatment of a surface having an exposed silicon/silica interface |
Aug. 15, 2000 |
| 6099604 |
Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto |
Aug. 8, 2000 |
| 6100197 |
Method of fabricating a semiconductor device |
Aug. 8, 2000 |
| 6096162 |
Chemical mechanical polishing machine |
Aug. 1, 2000 |
| 6096635 |
Method for creating via hole in chip |
Aug. 1, 2000 |
| 6096652 |
Method of chemical mechanical planarization using copper coordinating ligands |
Aug. 1, 2000 |
| 6096632 |
Fabrication method of semiconductor device using CMP process |
Aug. 1, 2000 |
| 6093649 |
Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto |
Jul. 25, 2000 |
| 6093651 |
Polish pad with non-uniform groove depth to improve wafer polish rate uniformity |
Jul. 25, 2000 |
| 6090714 |
Chemical mechanical polish (CMP) planarizing trench fill method employing composite trench fill layer |
Jul. 18, 2000 |
| 6083839 |
Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control |
Jul. 4, 2000 |
| 6083840 |
Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys |
Jul. 4, 2000 |
| 6083838 |
Method of planarizing a surface on a semiconductor wafer |
Jul. 4, 2000 |
| 6080671 |
Process of chemical-mechanical polishing and manufacturing an integrated circuit |
Jun. 27, 2000 |
| 6080673 |
Chemical mechanical polishing methods utilizing pH-adjusted polishing solutions |
Jun. 27, 2000 |
| 6077785 |
Ultrasonic processing of chemical mechanical polishing slurries |
Jun. 20, 2000 |
| 6077337 |
Chemical-mechanical polishing slurry |
Jun. 20, 2000 |
| 6077783 |
Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer |
Jun. 20, 2000 |
| 6077452 |
Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
Jun. 20, 2000 |
| 6071816 |
Method of chemical mechanical planarization using a water rinse to prevent particle contamination |
Jun. 6, 2000 |
| 6071818 |
Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material |
Jun. 6, 2000 |
| 6069083 |
Polishing method, semiconductor device fabrication method, and semiconductor fabrication apparatus |
May. 30, 2000 |
| 6068787 |
Composition and slurry useful for metal CMP |
May. 30, 2000 |
| 6068879 |
Use of corrosion inhibiting compounds to inhibit corrosion of metal plugs in chemical-mechanical polishing |
May. 30, 2000 |
| 6066564 |
Indirect endpoint detection by chemical reaction |
May. 23, 2000 |
| 6066266 |
In-situ chemical-mechanical polishing slurry formulation for compensation of polish pad degradation |
May. 23, 2000 |
| 6063306 |
Chemical mechanical polishing slurry useful for copper/tantalum substrate |
May. 16, 2000 |
| 6060395 |
Planarization method using a slurry including a dispersant |
May. 9, 2000 |
| 6060396 |
Polishing agent used for polishing semiconductor silicon wafers and polishing method using the same |
May. 9, 2000 |
| 6059920 |
Semiconductor device polishing apparatus having improved polishing liquid supplying apparatus, and polishing liquid supplying method |
May. 9, 2000 |
| 6057242 |
Flat interlayer insulating film suitable for multi-layer wiring |
May. 2, 2000 |
| 6051499 |
Apparatus and method for distribution of slurry in a chemical mechanical polishing system |
Apr. 18, 2000 |
|
|
|