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Class Information
Number: 438/693
Name: Semiconductor device manufacturing: process > Chemical etching > Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.) > Combined mechanical and chemical material removal > Simultaneous (e.g., chemical-mechanical polishing, etc.) > Utilizing particulate abradant
Description: Processes wherein the mechanical material removal is affected through the use of a particulate abrasive material.


Patents under this class:
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Patent Number Title Of Patent Date Issued
6127238 Plasma enhanced chemical vapor deposited (PECVD) silicon nitride barrier layer for high density plasma chemical vapor deposited (HDP-CVD) dielectric layer Oct. 3, 2000
6124207 Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurries Sep. 26, 2000
6123088 Method and cleaner composition for stripping copper containing residue layers Sep. 26, 2000
6120571 Polishing agent for semiconductor and method for its production Sep. 19, 2000
6117748 Dishing free process for shallow trench isolation Sep. 12, 2000
6117775 Polishing method Sep. 12, 2000
6117783 Chemical mechanical polishing composition and process Sep. 12, 2000
6117779 Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint Sep. 12, 2000
6114248 Process to reduce localized polish stop erosion Sep. 5, 2000
6114215 Generating non-planar topology on the surface of planar and near-planar substrates Sep. 5, 2000
6114249 Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity Sep. 5, 2000
6114247 Polishing cloth for use in a CMP process and a surface treatment thereof Sep. 5, 2000
6110832 Method and apparatus for slurry polishing Aug. 29, 2000
6110830 Methods of reducing corrosion of materials, methods of protecting aluminum within aluminum-comprising layers from electrochemical degradation during semiconductor processing methods of forming Aug. 29, 2000
6110396 Dual-valent rare earth additives to polishing slurries Aug. 29, 2000
6106728 Slurry recycling system and method for CMP apparatus Aug. 22, 2000
6108092 Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers Aug. 22, 2000
6107203 Chemical mechanical polishing system and method therefor Aug. 22, 2000
6103627 Treatment of a surface having an exposed silicon/silica interface Aug. 15, 2000
6099604 Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto Aug. 8, 2000
6100197 Method of fabricating a semiconductor device Aug. 8, 2000
6096162 Chemical mechanical polishing machine Aug. 1, 2000
6096635 Method for creating via hole in chip Aug. 1, 2000
6096652 Method of chemical mechanical planarization using copper coordinating ligands Aug. 1, 2000
6096632 Fabrication method of semiconductor device using CMP process Aug. 1, 2000
6093649 Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto Jul. 25, 2000
6093651 Polish pad with non-uniform groove depth to improve wafer polish rate uniformity Jul. 25, 2000
6090714 Chemical mechanical polish (CMP) planarizing trench fill method employing composite trench fill layer Jul. 18, 2000
6083839 Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control Jul. 4, 2000
6083840 Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys Jul. 4, 2000
6083838 Method of planarizing a surface on a semiconductor wafer Jul. 4, 2000
6080671 Process of chemical-mechanical polishing and manufacturing an integrated circuit Jun. 27, 2000
6080673 Chemical mechanical polishing methods utilizing pH-adjusted polishing solutions Jun. 27, 2000
6077785 Ultrasonic processing of chemical mechanical polishing slurries Jun. 20, 2000
6077337 Chemical-mechanical polishing slurry Jun. 20, 2000
6077783 Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer Jun. 20, 2000
6077452 Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment Jun. 20, 2000
6071816 Method of chemical mechanical planarization using a water rinse to prevent particle contamination Jun. 6, 2000
6071818 Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material Jun. 6, 2000
6069083 Polishing method, semiconductor device fabrication method, and semiconductor fabrication apparatus May. 30, 2000
6068787 Composition and slurry useful for metal CMP May. 30, 2000
6068879 Use of corrosion inhibiting compounds to inhibit corrosion of metal plugs in chemical-mechanical polishing May. 30, 2000
6066564 Indirect endpoint detection by chemical reaction May. 23, 2000
6066266 In-situ chemical-mechanical polishing slurry formulation for compensation of polish pad degradation May. 23, 2000
6063306 Chemical mechanical polishing slurry useful for copper/tantalum substrate May. 16, 2000
6060395 Planarization method using a slurry including a dispersant May. 9, 2000
6060396 Polishing agent used for polishing semiconductor silicon wafers and polishing method using the same May. 9, 2000
6059920 Semiconductor device polishing apparatus having improved polishing liquid supplying apparatus, and polishing liquid supplying method May. 9, 2000
6057242 Flat interlayer insulating film suitable for multi-layer wiring May. 2, 2000
6051499 Apparatus and method for distribution of slurry in a chemical mechanical polishing system Apr. 18, 2000

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