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Class Information
Number: 438/692
Name: Semiconductor device manufacturing: process > Chemical etching > Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.) > Combined mechanical and chemical material removal > Simultaneous (e.g., chemical-mechanical polishing, etc.)
Description: Processes wherein the chemical and mechanical material removal processes are concurrent.


Sub-classes under this class:

Class Number Class Name Patents
438/693 Utilizing particulate abradant 865


Patents under this class:

Patent Number Title Of Patent Date Issued
7148145 Semiconductor device having T-shaped gate structure comprising in situ sidewall spacers and method of forming the semiconductor device Dec. 12, 2006
7148137 Method of forming metal line in semiconductor device Dec. 12, 2006
7147682 Polishing composition Dec. 12, 2006
7146593 Method of implementing polishing uniformity and modifying layout data Dec. 5, 2006
7144816 Polysilicon opening polish Dec. 5, 2006
7144815 Chemical mechanical polishing slurry Dec. 5, 2006
7144814 Abrasive composition for the integrated circuits electronics industry Dec. 5, 2006
7141503 Methods for manufacturing a soft error and defect resistant pre-metal dielectric layer Nov. 28, 2006
7141502 Slurry-less polishing for removal of excess interconnect material during fabrication of a silicon integrated circuit Nov. 28, 2006
7141501 Polishing method, polishing apparatus, and method of manufacturing semiconductor device Nov. 28, 2006
RE39413 Low friction polish-stop stratum for endpointing chemical-mechanical planarization processing of semiconductor wafers Nov. 28, 2006
7138654 Chemical-mechanical polishing proximity correction method and correction pattern thereof Nov. 21, 2006
7138073 Slurry for chemical mechanical polishing for copper and method of manufacturing semiconductor device using the slurry Nov. 21, 2006
7135444 Cleaning composition useful in semiconductor integrated circuit fabrication Nov. 14, 2006
7135380 Method for manufacturing semiconductor device Nov. 14, 2006
7135124 Method for thinning wafers that have contact bumps Nov. 14, 2006
7132367 Polishing method Nov. 7, 2006
7129177 Write head fabrication by inverting order of process steps Oct. 31, 2006
7129174 Methods of fabricating a semiconductor substrate for reducing wafer warpage Oct. 31, 2006
7129173 Process for producing and removing a mask layer Oct. 31, 2006
7129167 Methods and systems for a stress-free cleaning a surface of a substrate Oct. 31, 2006
7129160 Method for simultaneously removing multiple conductive materials from microelectronic substrates Oct. 31, 2006
7125808 Method for manufacturing non-volatile memory cells on a semiconductor substrate Oct. 24, 2006
7125807 Method for manufacturing non-volatile memory cells on a semiconductor substrate Oct. 24, 2006
7125803 Reverse tone mask method for post-CMP elimination of copper overburden Oct. 24, 2006
7125802 CMP process leaving no residual oxide layer or slurry particles Oct. 24, 2006
7125751 Semiconductor device and method for the fabrication thereof grinding frame portion such that plural electrode constituent portions Oct. 24, 2006
7125324 Insulated pad conditioner and method of using same Oct. 24, 2006
7122475 Methods for using bi-modal abrasive slurries for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies Oct. 17, 2006
7122465 Method for achieving increased control over interconnect line thickness across a wafer and between wafers Oct. 17, 2006
7122424 Method for making improved bottom electrodes for metal-insulator-metal crown capacitors Oct. 17, 2006
7119009 Semiconductor device with dual damascene wiring Oct. 10, 2006
7118685 Polishing liquid composition Oct. 10, 2006
7115516 Method of depositing a material layer Oct. 3, 2006
7115510 Method for electrochemically processing a workpiece Oct. 3, 2006
7112528 Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug Sep. 26, 2006
7109118 Electrochemical fabrication methods including use of surface treatments to reduce overplating and/or planarization during formation of multi-layer three-dimensional structures Sep. 19, 2006
7109117 Method for chemical mechanical polishing of a shallow trench isolation structure Sep. 19, 2006
7104267 Planarized copper cleaning for reduced defects Sep. 12, 2006
7105399 Selective epitaxial growth for tunable channel thickness Sep. 12, 2006
7105475 Cleaning solution and cleaning method of a semiconductor device Sep. 12, 2006
7105914 Integrated circuit and seed layers Sep. 12, 2006
7101259 Polishing method and apparatus Sep. 5, 2006
7101272 Carrier head for thermal drift compensation Sep. 5, 2006
7101799 Feedforward and feedback control for conditioning of chemical mechanical polishing pad Sep. 5, 2006
7101800 Chemical-mechanical polishing slurry and method Sep. 5, 2006
7094695 Apparatus and method for conditioning a polishing pad used for mechanical and/or chemical-mechanical planarization Aug. 22, 2006
7090786 Aqueous dispersion for chemical/mechanical polishing Aug. 15, 2006
7091123 Method of forming metal wiring line including using a first insulating film as a stopper film Aug. 15, 2006
7091126 Method for copper surface smoothing Aug. 15, 2006



 
 
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