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Class Information
Number: 438/692
Name: Semiconductor device manufacturing: process > Chemical etching > Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.) > Combined mechanical and chemical material removal > Simultaneous (e.g., chemical-mechanical polishing, etc.)
Description: Processes wherein the chemical and mechanical material removal processes are concurrent.


Sub-classes under this class:

Class Number Class Name Patents
438/693 Utilizing particulate abradant 865


Patents under this class:
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Patent Number Title Of Patent Date Issued
6686283 Shallow trench isolation planarization using self aligned isotropic etch Feb. 3, 2004
6686284 Chemical mechanical polisher equipped with chilled retaining ring and method of using Feb. 3, 2004
6686285 Semiconductor device manufacture method preventing dishing and erosion during chemical mechanical polishing Feb. 3, 2004
6682398 Method for characterizing the planarizing properties of an expendable material combination in a chemical-mechanical polishing process; simulation technique; and polishing technique Jan. 27, 2004
6682575 Methanol-containing silica-based CMP compositions Jan. 27, 2004
6682985 Semiconductor device and manufacturing method thereof Jan. 27, 2004
6683004 Method of manufacturing a semiconductor device, and semiconductor device manufactured thereby Jan. 27, 2004
6679928 Polishing composition having a surfactant Jan. 20, 2004
6679929 Polishing composition and polishing method employing it Jan. 20, 2004
6680252 Method for planarizing barc layer in dual damascene process Jan. 20, 2004
6676718 Polishing of semiconductor substrates Jan. 13, 2004
6676719 Aqueous dispersion, a process for the preparation and the use thereof Jan. 13, 2004
6677239 Methods and compositions for chemical mechanical polishing Jan. 13, 2004
6676487 Method for polishing surface of vapor-phase synthesized thin diamond film Jan. 13, 2004
6676496 Apparatus for processing semiconductor wafers Jan. 13, 2004
6673634 Wafer protection method Jan. 6, 2004
6675058 Method and apparatus for controlling the flow of wafers through a process flow Jan. 6, 2004
6670272 Method for reducing dishing in chemical mechanical polishing Dec. 30, 2003
6670274 Method of forming a copper damascene structure comprising a recessed copper-oxide-free initial copper structure Dec. 30, 2003
6667238 Polishing method and apparatus Dec. 23, 2003
6667239 Chemical mechanical polishing of copper-oxide damascene structures Dec. 23, 2003
RE38363 Method of forming trench isolation having polishing step and method of manufacturing semiconductor device Dec. 23, 2003
6663683 Aqueous dispersions, process for their production, and their use Dec. 16, 2003
6664188 Semiconductor wafer with a resistant film Dec. 16, 2003
6664189 Removal of wafer edge defocus due to CMP Dec. 16, 2003
6660636 Highly selective and complete interconnect metal line and via/contact hole filling by electroless plating Dec. 9, 2003
6660637 Process for chemical mechanical polishing Dec. 9, 2003
6660638 CMP process leaving no residual oxide layer or slurry particles Dec. 9, 2003
6660639 Method of fabricating a copper damascene structure Dec. 9, 2003
6656241 Silica-based slurry Dec. 2, 2003
6656818 Manufacturing process for semiconductor wafer comprising surface grinding and planarization or polishing Dec. 2, 2003
6656842 Barrier layer buffing after Cu CMP Dec. 2, 2003
6652708 Methods and apparatus for conditioning and temperature control of a processing surface Nov. 25, 2003
6652764 Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates Nov. 25, 2003
6653194 Method for forming contact hole in semiconductor device Nov. 25, 2003
6653202 Method of shallow trench isolation (STI) formation using amorphous carbon Nov. 25, 2003
6649451 Structure and method for wafer comprising dielectric and semiconductor Nov. 18, 2003
6649460 Fabricating a substantially self-aligned MOSFET Nov. 18, 2003
6649523 Method and system to provide material removal and planarization employing a reactive pad Nov. 18, 2003
6645051 Polishing composition and polishing method for polishing a substrate to be used for a memory hard disk employing it Nov. 11, 2003
6645825 Planarization of shallow trench isolation (STI) Nov. 11, 2003
6645862 Double-side polishing process with reduced scratch rate and device for carrying out the process Nov. 11, 2003
6645863 Method of manufacturing semiconductor device and semiconductor device Nov. 11, 2003
6645864 Physical vapor deposition of an amorphous silicon liner to eliminate resist poisoning Nov. 11, 2003
6645865 Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes Nov. 11, 2003
6645866 Method of fabricating a semiconductor device using trench isolation method including hydrogen annealing step Nov. 11, 2003
6645869 Etching back process to improve topographic planarization of a polysilicon layer Nov. 11, 2003
6641630 CMP compositions containing iodine and an iodine vapor-trapping agent Nov. 4, 2003
6642147 Method of making thermally stable planarizing films Nov. 4, 2003
6638830 Method for fabricating a high-density capacitor Oct. 28, 2003

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