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Class Information
Number: 438/691
Name: Semiconductor device manufacturing: process > Chemical etching > Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.) > Combined mechanical and chemical material removal
Description: Processes wherein the nonchemical material removal is a mechanical (e.g., abrading, cutting, etc.) removal method.


Sub-classes under this class:

Class Number Class Name Patents
438/692 Simultaneous (e.g., chemical-mechanical polishing, etc.) 2,227


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Patent Number Title Of Patent Date Issued
6743660 Method of making a wafer level chip scale package Jun. 1, 2004
6743075 Method for determining chemical mechanical polishing time Jun. 1, 2004
6743268 Chemical-mechanical planarization of barriers or liners for copper metallurgy Jun. 1, 2004
6740589 Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same May. 25, 2004
6734427 TEM/SEM sample preparation May. 11, 2004
6730615 High reflector tunable stress coating, such as for a MEMS mirror May. 4, 2004
6730592 Methods for planarization of metal-containing surfaces using halogens and halide salts May. 4, 2004
6730602 Method for forming aluminum bumps by sputtering and chemical mechanical polishing May. 4, 2004
6730603 System and method of determining a polishing endpoint by monitoring signal intensity May. 4, 2004
6722963 Apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane Apr. 20, 2004
6723644 Method of fabricating a semiconductor device using two chemical mechanical polishing processes to polish regions having different conductive pattern densities Apr. 20, 2004
6723144 Semiconductor device fabricating method Apr. 20, 2004
6723626 Method of manufacturing semiconductor device Apr. 20, 2004
6723655 Methods for fabricating a semiconductor device Apr. 20, 2004
6725120 Apparatus and methods with resolution enhancement feature for improving accuracy of conversion of required chemical mechanical polishing pressure to force to be applied by polishing head to wa Apr. 20, 2004
6713394 Process for planarization of integrated circuit structure which inhibits cracking of low dielectric constant dielectric material adjacent underlying raised structures Mar. 30, 2004
6706608 Memory cell capacitors having an over/under configuration Mar. 16, 2004
6706633 Method of forming a self-aligned contact pad for use in a semiconductor device Mar. 16, 2004
6699402 Chemical mechanical polishing compositions for CMP removal of iridium thin films Mar. 2, 2004
6699299 Composition and method for polishing in metal CMP Mar. 2, 2004
6699795 Gate etch process Mar. 2, 2004
6693002 Semiconductor device and its manufacture Feb. 17, 2004
6693034 Deadhesion method and mechanism for wafer processing Feb. 17, 2004
6689627 Process for manufacturing micromechanical components in a semiconductor material wafer with reduction in the starting wafer thickness Feb. 10, 2004
6689691 Method of simultaneously polishing a plurality of objects of a similar type, in particular silicon wafers, on a polishing installation Feb. 10, 2004
6689692 Composition for oxide CMP Feb. 10, 2004
6686283 Shallow trench isolation planarization using self aligned isotropic etch Feb. 3, 2004
6686600 TEM sample slicing process Feb. 3, 2004
6686250 Method of forming self-aligned bipolar transistor Feb. 3, 2004
6685543 Compensating chemical mechanical wafer polishing apparatus and method Feb. 3, 2004
6683003 Global planarization method and apparatus Jan. 27, 2004
6679761 Polishing compound for semiconductor containing peptide Jan. 20, 2004
6680252 Method for planarizing barc layer in dual damascene process Jan. 20, 2004
6676484 COPPER CHEMICAL-MECHANICAL POLISHING PROCESS USING A FIXED ABRASIVE POLISHING PAD AND A COPPER LAYER CHEMICAL-MECHANICAL POLISHING SOLUTION SPECIFICALLY ADAPTED FOR CHEMICAL-MECHANICAL POLISHI Jan. 13, 2004
6677250 CVD apparatuses and methods of forming a layer over a semiconductor substrate Jan. 13, 2004
6670272 Method for reducing dishing in chemical mechanical polishing Dec. 30, 2003
6670274 Method of forming a copper damascene structure comprising a recessed copper-oxide-free initial copper structure Dec. 30, 2003
6667239 Chemical mechanical polishing of copper-oxide damascene structures Dec. 23, 2003
6660637 Process for chemical mechanical polishing Dec. 9, 2003
6660636 Highly selective and complete interconnect metal line and via/contact hole filling by electroless plating Dec. 9, 2003
6656842 Barrier layer buffing after Cu CMP Dec. 2, 2003
6645862 Double-side polishing process with reduced scratch rate and device for carrying out the process Nov. 11, 2003
6642147 Method of making thermally stable planarizing films Nov. 4, 2003
6635574 Method of removing material from a semiconductor substrate Oct. 21, 2003
6627546 Process for removing contaminant from a surface and composition useful therefor Sep. 30, 2003
6627550 Post-planarization clean-up Sep. 30, 2003
6623993 Method of determining the time for polishing the surface of an integrated circuit wafer Sep. 23, 2003
6620735 Method for processing substrates Sep. 16, 2003
6617251 Method of shallow trench isolation formation and planarization Sep. 9, 2003
6616514 High selectivity CMP slurry Sep. 9, 2003

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15


 
 
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