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Class Information
Number: 438/691
Name: Semiconductor device manufacturing: process > Chemical etching > Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.) > Combined mechanical and chemical material removal
Description: Processes wherein the nonchemical material removal is a mechanical (e.g., abrading, cutting, etc.) removal method.










Sub-classes under this class:

Class Number Class Name Patents
438/692 Simultaneous (e.g., chemical-mechanical polishing, etc.) 2,959


Patents under this class:
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Patent Number Title Of Patent Date Issued
6337271 Polishing simulation Jan. 8, 2002
6333268 Method and apparatus for removing post-etch residues and other adherent matrices Dec. 25, 2001
6323122 Structure for a multi-layered dielectric layer and manufacturing method thereof Nov. 27, 2001
6319833 Chemically preventing copper dendrite formation and growth by spraying Nov. 20, 2001
6319836 Planarization system Nov. 20, 2001
6315397 In-situ fluid jet orifice Nov. 13, 2001
6315858 Gas polishing apparatus and method Nov. 13, 2001
6316363 Deadhesion method and mechanism for wafer processing Nov. 13, 2001
6309973 Semiconductor processing methods of forming a conductive projection and methods of increasing alignment tolerances Oct. 30, 2001
6306752 Connection component and method of making same Oct. 23, 2001
6300247 Preconditioning polishing pads for chemical-mechanical polishing Oct. 9, 2001
6300248 On-chip pad conditioning for chemical mechanical polishing Oct. 9, 2001
6296717 Regeneration of chemical mechanical polishing pads in-situ Oct. 2, 2001
6297159 Method and apparatus for chemical polishing using field responsive materials Oct. 2, 2001
6294027 Methods and apparatus for cleaning semiconductor substrates after polishing of copper film Sep. 25, 2001
6294469 Silicon wafering process flow Sep. 25, 2001
6291349 Abrasive finishing with partial organic boundary layer Sep. 18, 2001
6284658 Manufacturing process for semiconductor wafer Sep. 4, 2001
6281127 Self-passivation procedure for a copper damascene structure Aug. 28, 2001
6281128 Wafer carrier modification for reduced extraction force Aug. 28, 2001
6281129 Corrosion-resistant polishing pad conditioner Aug. 28, 2001
6281589 System of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides Aug. 28, 2001
6276996 Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishi Aug. 21, 2001
6274059 Method to remove metals in a scrubber Aug. 14, 2001
6274480 Method of Fabricating semiconductor device Aug. 14, 2001
6274509 Global planarization method for inter-layer-dielectric and inter-metal dielectric Aug. 14, 2001
6271138 Chemical mechanical polish (CMP) planarizing method with enhanced chemical mechanical polish (CMP) planarized layer planarity Aug. 7, 2001
6265294 Integrated circuit having double bottom anti-reflective coating layer Jul. 24, 2001
6265314 Wafer edge polish Jul. 24, 2001
6258608 Method for forming a crystalline perovskite ferroelectric material in a semiconductor device Jul. 10, 2001
6258721 Diamond slurry for chemical-mechanical planarization of semiconductor wafers Jul. 10, 2001
6255211 Silicon carbide stop layer in chemical mechanical polishing over metallization layers Jul. 3, 2001
6251788 Method of integrated circuit polishing without dishing effects Jun. 26, 2001
6248659 Method for forming an interconnect structure Jun. 19, 2001
6245677 Backside chemical etching and polishing Jun. 12, 2001
6245678 Method for manufacturing semiconductor wafers Jun. 12, 2001
6241847 Method and apparatus for detecting a polishing endpoint based upon infrared signals Jun. 5, 2001
6242343 Process for fabricating semiconductor device and apparatus for fabricating semiconductor device Jun. 5, 2001
6242352 Method of preventing micro-scratches on the surface of a semiconductor wafer when performing a CMP process Jun. 5, 2001
6242805 Method of using a polish stop film to control dishing during copper chemical mechanical polishing Jun. 5, 2001
6238590 Tribochemical polishing of ceramics and metals May. 29, 2001
6238592 Working liquids and methods for modifying structured wafers suited for semiconductor fabrication May. 29, 2001
6235635 Linear CMP tool design using in-situ slurry distribution and concurrent pad conditioning May. 22, 2001
6235636 Resist removal by polishing May. 22, 2001
6232043 Rule to determine CMP polish time May. 15, 2001
6232231 Planarized semiconductor interconnect topography and method for polishing a metal layer to form interconnect May. 15, 2001
6227955 Carrier heads, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies May. 8, 2001
6228754 Method for forming semiconductor seed layers by inert gas sputter etching May. 8, 2001
6228768 Storage-annealing plated CU interconnects May. 8, 2001
6228769 Endpoint detection by chemical reaction and photoionization May. 8, 2001

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