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Class Information
Number: 438/687
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Copper of copper alloy conductor
Description: Processes for forming a contact using copper (Cu) or an alloy thereof.

Patents under this class:

Patent Number Title Of Patent Date Issued
7459387 Semiconductor electronic device and method of manufacturing thereof Dec. 2, 2008
7456102 Electroless copper fill process Nov. 25, 2008
7452812 Method to create super secondary grain growth in narrow trenches Nov. 18, 2008
7452795 Semiconductor device and method for fabricating the same Nov. 18, 2008
7449412 Interconnect circuitry, multichip module, and methods of manufacturing thereof Nov. 11, 2008
7449099 Selectively accelerated plating of metal features Nov. 11, 2008
7446040 Structure for optimizing fill in semiconductor features deposited by electroplating Nov. 4, 2008
7446033 Method of forming a metal interconnection of a semiconductor device, and metal interconnection formed by such method Nov. 4, 2008
7442637 Method for processing IC designs for different metal BEOL processes Oct. 28, 2008
7442636 Method of inhibiting copper corrosion during supercritical CO.sub.2 cleaning Oct. 28, 2008
7439182 Semiconductor device and method of fabricating the same Oct. 21, 2008
7432205 Method for controlling polishing process Oct. 7, 2008
7427565 Multi-step etch for metal bump formation Sep. 23, 2008
7427561 Method for manufacturing semiconductor device Sep. 23, 2008
7422981 Method for manufacturing semiconductor device by using dual damascene process and method for manufacturing article having communicating hole Sep. 9, 2008
7422979 Method of forming a semiconductor device having a diffusion barrier stack and structure thereof Sep. 9, 2008
7422977 Copper adhesion improvement device and method Sep. 9, 2008
7422976 Top layers of metal for high performance IC's Sep. 9, 2008
7420275 Boron-doped SIC copper diffusion barrier films Sep. 2, 2008
7419916 Manufacturing method of semiconductor device Sep. 2, 2008
7416982 Semiconductor devices and methods for manufacturing the same Aug. 26, 2008
7416932 Power composite integrated semiconductor device and manufacturing method thereof Aug. 26, 2008
7413985 Method for forming a self-aligned nitrogen-containing copper silicide capping layer in a microstructure device Aug. 19, 2008
7413984 Multi-step process for forming a barrier film for use in copper layer formation Aug. 19, 2008
7413983 Plating method including pretreatment of a surface of a base metal Aug. 19, 2008
7413974 Copper-metallized integrated circuits having electroless thick copper bond pads Aug. 19, 2008
7410900 Metallisation Aug. 12, 2008
7410666 Metal nitride carbide deposition by ALD Aug. 12, 2008
7402519 Interconnects having sealing structures to enable selective metal capping layers Jul. 22, 2008
7402514 Line-to-line reliability enhancement using a dielectric liner for a low dielectric constant interlevel and intralevel (or intermetal and intrametal) dielectric layer Jul. 22, 2008
7399706 Manufacturing method of semiconductor device Jul. 15, 2008
7396759 Protection of Cu damascene interconnects by formation of a self-aligned buffer layer Jul. 8, 2008
7396756 Top layers of metal for high performance IC's Jul. 8, 2008
7393786 Method for manufacturing copper wires on substrate of flat panel display device Jul. 1, 2008
7387962 Physical vapor deposition methods for forming hydrogen-stuffed trench liners for copper-based metallization Jun. 17, 2008
7387912 Packaging of electronic chips with air-bridge structures Jun. 17, 2008
7381660 Dielectric barrier layer for a copper metallization layer having a varying silicon concentration along its thickness Jun. 3, 2008
7381646 Method for using a Cu BEOL process to fabricate an integrated circuit (IC) originally having an al design Jun. 3, 2008
7381638 Fabrication technique using sputter etch and vacuum transfer Jun. 3, 2008
7378737 Structures and methods to enhance copper metallization May. 27, 2008
7375031 Technique for forming interconnect structures with reduced electro and stress migration and/or resistivity May. 20, 2008
7375026 Local multilayered metallization May. 20, 2008
7371682 Production method for electronic component and electronic component May. 13, 2008
7368383 Hillock reduction in copper films May. 6, 2008
7368066 Gold CMP composition and method May. 6, 2008
7365011 Catalytic nucleation monolayer for metal seed layers Apr. 29, 2008
7361589 Copper interconnect systems which use conductive, metal-based cap layers Apr. 22, 2008
7358189 Copper clad laminate Apr. 15, 2008
7358180 Method of forming wiring structure and semiconductor device Apr. 15, 2008
7354859 Method of manufacturing semiconductor device Apr. 8, 2008

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