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Class Information
Number: 438/687
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Copper of copper alloy conductor
Description: Processes for forming a contact using copper (Cu) or an alloy thereof.










Patents under this class:

Patent Number Title Of Patent Date Issued
6696360 Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow Feb. 24, 2004
6693030 Reactive preclean prior to metallization for sub-quarter micron application Feb. 17, 2004
6689686 System and method for electroplating fine geometries Feb. 10, 2004
6689689 Selective deposition process for allowing damascene-type Cu interconnect lines Feb. 10, 2004
6689690 Semiconductor device manufacturing method of forming an etching stopper film on a diffusion prevention film at a higher temperature Feb. 10, 2004
6686661 Thin film transistor having a copper alloy wire Feb. 3, 2004
6683002 Method to create a copper diffusion deterrent interface Jan. 27, 2004
6680247 Manufacturing method of a semiconductor device Jan. 20, 2004
6677233 Material deposition from a liquefied gas solution Jan. 13, 2004
6677678 Damascene structure using a sacrificial conductive layer Jan. 13, 2004
6673725 Semiconductor device and method of manufacturing the same Jan. 6, 2004
6674171 Semiconductor device with a low resistance wiring Jan. 6, 2004
6670270 Semiconductor device manufacturing apparatus and semiconductor device manufacturing method Dec. 30, 2003
6670271 Growing a dual damascene structure using a copper seed layer and a damascene resist structure Dec. 30, 2003
6670274 Method of forming a copper damascene structure comprising a recessed copper-oxide-free initial copper structure Dec. 30, 2003
6670715 Bilayer silicon carbide based barrier Dec. 30, 2003
6664122 Electroless copper deposition method for preparing copper seed layers Dec. 16, 2003
6664178 Method of forming buried interconnecting wire Dec. 16, 2003
6664179 Semiconductor device production method and semiconductor device production apparatus Dec. 16, 2003
6664185 Self-aligned barrier formed with an alloy having at least two dopant elements for minimized resistance of interconnect Dec. 16, 2003
6664187 Laser thermal annealing for Cu seedlayer enhancement Dec. 16, 2003
6664636 Cu film deposition equipment of semiconductor device Dec. 16, 2003
6660624 Method for reducing fluorine induced defects on a bonding pad surface Dec. 9, 2003
6660625 Method of electroless plating copper on nitride barrier Dec. 9, 2003
6660627 Method for planarization of wafers with high selectivities Dec. 9, 2003
6660633 Method of reducing electromigration in a copper line by electroplating an interim copper-zinc alloy thin film on a copper surface and a semiconductor device thereby formed Dec. 9, 2003
6660634 Method of forming reliable capped copper interconnects Dec. 9, 2003
6661097 Ti liner for copper interconnect with low-k dielectric Dec. 9, 2003
6656826 Semiconductor device with fuse to be blown with energy beam and method of manufacturing the semiconductor device Dec. 2, 2003
6656830 Dual damascene with silicon carbide middle etch stop layer/ARC Dec. 2, 2003
6656832 Plasma treatment method for fabricating microelectronic fabrication having formed therein conductor layer with enhanced electrical properties Dec. 2, 2003
6656834 Method of selectively alloying interconnect regions by deposition process Dec. 2, 2003
6656836 Method of performing a two stage anneal in the formation of an alloy interconnect Dec. 2, 2003
6656840 Method for forming silicon containing layers on a substrate Dec. 2, 2003
6656841 Method of forming multi layer conductive line in semiconductor device Dec. 2, 2003
6653233 Process of providing a semiconductor device with electrical interconnection capability Nov. 25, 2003
6653235 Fabricating process for forming multi-layered metal bumps by electroless plating Nov. 25, 2003
6653236 Methods of forming metal-containing films over surfaces of semiconductor substrates; and semiconductor constructions Nov. 25, 2003
6653243 Methods of cleaning surfaces of copper-containing materials, and methods of forming openings to copper-containing substrates Nov. 25, 2003
6649513 Copper back-end-of-line by electropolish Nov. 18, 2003
6649522 Etch stop in damascene interconnect structure and method of making Nov. 18, 2003
6645847 Microelectronic interconnect material with adhesion promotion layer and fabrication method Nov. 11, 2003
6645852 Process for fabricating a semiconductor device having recess portion Nov. 11, 2003
6645858 Method of catalyzing copper deposition in a damascene structure by plasma treating the barrier layer and then applying a catalyst such as iodine or iodine compounds to the barrier layer Nov. 11, 2003
6645860 Adhesion promotion method for CVD copper metallization in IC applications Nov. 11, 2003
6642145 Method of manufacturing an integrated circuit with a dielectric diffusion barrier layer formed between interconnects and interlayer dielectric layers Nov. 4, 2003
6642146 Method of depositing copper seed on semiconductor substrates Nov. 4, 2003
6638847 Method of forming lead-free bump interconnections Oct. 28, 2003
6638851 Dual hardmask single damascene integration scheme in an organic low k ILD Oct. 28, 2003
6638856 Method of depositing metal onto a substrate Oct. 28, 2003











 
 
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