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Class Information
Number: 438/687
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Copper of copper alloy conductor
Description: Processes for forming a contact using copper (Cu) or an alloy thereof.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6879042 Semiconductor device and method and apparatus for manufacturing the same Apr. 12, 2005
6875692 Copper electromigration inhibition by copper alloy formation Apr. 5, 2005
6875693 Via and metal line interface capable of reducing the incidence of electro-migration induced voids Apr. 5, 2005
6875694 Method of treating inlaid copper for improved capping layer adhesion without damaging porous low-k materials Apr. 5, 2005
6869873 Copper silicide passivation for improved reliability Mar. 22, 2005
6869876 Process for atomic layer deposition of metal films Mar. 22, 2005
6869878 Method of forming a selective barrier layer using a sacrificial layer Mar. 22, 2005
6867135 Via bottom copper/barrier interface improvement to resolve via electromigration and stress migration Mar. 15, 2005
6867136 Method for electrochemically processing a workpiece Mar. 15, 2005
6864181 Method and apparatus to form a planarized Cu interconnect layer using electroless membrane deposition Mar. 8, 2005
6861355 Metal plating using seed film Mar. 1, 2005
6861376 Photoresist scum free process for via first dual damascene process Mar. 1, 2005
6861758 Structure and manufacturing process of localized shunt to reduce electromigration failure of copper dual damascene process Mar. 1, 2005
6858479 Low resistivity copper conductor line, liquid crystal display device having the same and method for forming the same Feb. 22, 2005
6858511 Method of semiconductor via testing Feb. 22, 2005
6858527 Method to increase electromigration resistance of copper using self-assembled organic thiolate monolayers Feb. 22, 2005
6855632 Cu film deposition equipment of semiconductor device Feb. 15, 2005
6852624 Electroless plating process, and embedded wire and forming process thereof Feb. 8, 2005
6852625 Package substrate manufactured using electrolytic leadless plating process, and method for manufacturing the same Feb. 8, 2005
6852626 Film deposition method and apparatus Feb. 8, 2005
6852627 Conductive through wafer vias Feb. 8, 2005
6853082 Method and structure for integrating metal insulator metal capacitor with copper Feb. 8, 2005
6849535 Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device Feb. 1, 2005
6849541 Method of fabricating a dual damascene copper wire Feb. 1, 2005
6849549 Method for forming dummy structures for improved CMP and reduced capacitance Feb. 1, 2005
6849561 Method of forming low-k films Feb. 1, 2005
6846741 Sacrificial metal spacer damascene process Jan. 25, 2005
6846749 N-containing plasma etch process with reduced resist poisoning Jan. 25, 2005
6844245 Method of preparing a self-passivating Cu laser fuse Jan. 18, 2005
6841466 Method of selectively making copper using plating technology Jan. 11, 2005
6841473 Manufacturing an integrated circuit with low solubility metal-conductor interconnect cap Jan. 11, 2005
6841476 Electroless plating method Jan. 11, 2005
6841477 Metal interconnection, semiconductor device, method for forming metal interconnection and method for fabricating semiconductor device Jan. 11, 2005
6841478 Method of forming a multi-layered copper bond pad for an integrated circuit Jan. 11, 2005
6841877 Semiconductor device, metal laminated plate for fabricating circuit on semiconductor, and method of fabricating circuit Jan. 11, 2005
6837979 Method and apparatus for depositing and controlling the texture of a thin film Jan. 4, 2005
6838355 Damascene interconnect structures including etchback for low-k dielectric materials Jan. 4, 2005
6838379 PROCESS FOR REDUCING IMPURITY LEVELS, STRESS, AND RESISTIVITY, AND INCREASING GRAIN SIZE OF COPPER FILLER IN TRENCHES AND VIAS OF INTEGRATED CIRCUIT STRUCTURES TO ENHANCE ELECTRICAL PERFORMANC Jan. 4, 2005
6835655 Method of implanting copper barrier material to improve electrical performance Dec. 28, 2004
6835660 Method of manufacturing semiconductor device having metal alloy interconnection that has excellent EM lifetime Dec. 28, 2004
6830971 High K artificial lattices for capacitor applications to use in CU or AL BEOL Dec. 14, 2004
6831003 Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigration Dec. 14, 2004
6831013 Method of forming a dual damascene via by using a metal hard mask layer Dec. 14, 2004
6828223 Localized slots for stress relieve in copper Dec. 7, 2004
6828683 Semiconductor devices, and semiconductor processing methods Dec. 7, 2004
6824665 Seed layer deposition Nov. 30, 2004
6821879 Copper interconnect by immersion/electroless plating in dual damascene process Nov. 23, 2004
6821882 Semiconductor device manufacturing method for improving adhesivity of copper metal layer to barrier layer Nov. 23, 2004
6821889 Production of elemental thin films using a boron-containing reducing agent Nov. 23, 2004
6821890 Method for improving adhesion to copper Nov. 23, 2004

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