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Class Information
Number: 438/687
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Copper of copper alloy conductor
Description: Processes for forming a contact using copper (Cu) or an alloy thereof.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6967155 Adhesion of copper and etch stop layer for copper alloy Nov. 22, 2005
6967157 Method of forming buried wiring in semiconductor device Nov. 22, 2005
6967405 Film for copper diffusion barrier Nov. 22, 2005
6964874 Void formation monitoring in a damascene process Nov. 15, 2005
6964919 Low-k dielectric film with good mechanical strength Nov. 15, 2005
6964920 Method of manufacturing a semiconductor device Nov. 15, 2005
6962870 Method of manufacturing semiconductor device and semiconductor device Nov. 8, 2005
6962874 Method for fabricating semiconductor device Nov. 8, 2005
6960521 Method and apparatus for polishing metal and dielectric substrates Nov. 1, 2005
6960529 Methods for sidewall protection of metal interconnect for unlanded vias using physical vapor deposition Nov. 1, 2005
6955980 Reducing the migration of grain boundaries Oct. 18, 2005
6955984 Surface treatment of metal interconnect lines Oct. 18, 2005
6955986 Atomic layer deposition methods for forming a multi-layer adhesion-barrier layer for integrated circuits Oct. 18, 2005
6953742 Tantalum barrier layer for copper metallization Oct. 11, 2005
6951804 Formation of a tantalum-nitride layer Oct. 4, 2005
6951809 Method for manufacturing semiconductor device Oct. 4, 2005
6951812 Copper transition layer for improving copper interconnection reliability Oct. 4, 2005
6951816 Method of forming a metal layer over patterned dielectric by electroless deposition using a catalyst Oct. 4, 2005
6946716 Electroplated interconnection structures on integrated circuit chips Sep. 20, 2005
6946066 Multi step electrodeposition process for reducing defects and minimizing film thickness Sep. 20, 2005
6946383 Method for forming wiring structure which includes annealing conductive film before and after removal of a portion of the conductive film Sep. 20, 2005
6946386 Process for producing ultrathin homogenous metal layers Sep. 20, 2005
6946389 Method of forming buried conductors Sep. 20, 2005
6946397 Chemical mechanical polishing process with reduced defects in a copper process Sep. 20, 2005
6943101 Manufacturing of a corrosion protected interconnect on a substrate Sep. 13, 2005
6943111 Barrier free copper interconnect by multi-layer copper seed Sep. 13, 2005
6943112 Defect-free thin and planar film processing Sep. 13, 2005
6939793 Dual damascene integration scheme for preventing copper contamination of dielectric layer Sep. 6, 2005
6939795 Selective dry etching of tantalum and tantalum nitride Sep. 6, 2005
6939797 Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereof Sep. 6, 2005
6939800 Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structures Sep. 6, 2005
6939803 Method for forming conductor reservoir volume for integrated circuit interconnects Sep. 6, 2005
6940114 Integrated circuit devices including a MIM capacitor Sep. 6, 2005
6936536 Methods of forming conductive through-wafer vias Aug. 30, 2005
6936550 Semiconductor integrated circuit device and method for manufacturing the same Aug. 30, 2005
6936925 Semiconductor device having copper lines with reduced electromigration using an electroplated interim copper-zinc alloy film on a copper surface Aug. 30, 2005
6933225 Graded thin films Aug. 23, 2005
6933232 Method of reducing oxidation of metal structures by selectively implanting ions through a mask positioned above and not in contact with the substrate Aug. 23, 2005
6931330 Methods for monitoring and controlling chemical mechanical planarization Aug. 16, 2005
6930036 Semiconductor device and method of manufacturing the same Aug. 16, 2005
6930044 Method for fabricating a packaging substrate Aug. 16, 2005
6930045 Cross reference to related application Aug. 16, 2005
6927160 Fabrication of copper-containing region such as electrical interconnect Aug. 9, 2005
6924221 Integrated process flow to improve copper filling in a damascene structure Aug. 2, 2005
6924227 Slurry for chemical mechanical polishing and method of manufacturing semiconductor device Aug. 2, 2005
6924234 Method and apparatus for polishing a copper layer and method for forming a wiring structure using copper Aug. 2, 2005
6921713 Semiconductor chip package with interconnect structure Jul. 26, 2005
6921714 Method for manufacturing a semiconductor device Jul. 26, 2005
6919214 Apparatus for analyzing a substrate employing a copper decoration Jul. 19, 2005
6919270 Method of manufacturing silicon carbide film Jul. 19, 2005

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