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Class Information
Number: 438/687
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Copper of copper alloy conductor
Description: Processes for forming a contact using copper (Cu) or an alloy thereof.










Patents under this class:
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Patent Number Title Of Patent Date Issued
7202162 Atomic layer deposition tantalum nitride layer to improve adhesion between a copper structure and overlying materials Apr. 10, 2007
7202159 Diffusion barriers comprising a self-assembled monolayer Apr. 10, 2007
7202156 Process for manufacturing a wiring substrate Apr. 10, 2007
7199052 Seed layers for metallic interconnects Apr. 3, 2007
7199044 Method for manufacturing semiconductor device Apr. 3, 2007
7199043 Method of forming copper wiring in semiconductor device Apr. 3, 2007
7196001 Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same Mar. 27, 2007
7192866 Source alternating MOCVD processes to deposit tungsten nitride thin films as barrier layers for MOCVD copper interconnects Mar. 20, 2007
7192495 Intermediate anneal for metal deposition Mar. 20, 2007
7189650 Method and apparatus for copper film quality enhancement with two-step deposition Mar. 13, 2007
7189647 Sequential station tool for wet processing of semiconductor wafers Mar. 13, 2007
7186652 Method for preventing Cu contamination and oxidation in semiconductor device manufacturing Mar. 6, 2007
7186648 Barrier first method for single damascene trench applications Mar. 6, 2007
7186644 Methods for preventing copper oxidation in a dual damascene process Mar. 6, 2007
7186642 Low temperature nitride used as Cu barrier layer Mar. 6, 2007
7186640 Silicon-rich oxide for copper damascene interconnect incorporating low dielectric constant dielectrics Mar. 6, 2007
7186636 Nickel bonding cap over copper metalized bondpads Mar. 6, 2007
7183209 Semiconductor device and manufacturing method thereof Feb. 27, 2007
7183203 Method of plating a metal or metal compound on a semiconductor substrate that includes using the same main component in both plating and etching solutions Feb. 27, 2007
7179743 Titanium underlayer for lines in semiconductor devices Feb. 20, 2007
7179742 Interconnect circuitry, multichip module, and methods for making them Feb. 20, 2007
7179732 Interconnection structure and fabrication method thereof Feb. 20, 2007
7176081 Low temperature method for metal deposition Feb. 13, 2007
7172968 Ultra thin, single phase, diffusion barrier for metal conductors Feb. 6, 2007
7172966 Method for fabricating metallic interconnects on electronic components Feb. 6, 2007
7172963 Manufacturing method of semiconductor integrated circuit device that includes chemically and mechanically polishing two conductive layers using two polishing pads that have different propertie Feb. 6, 2007
7172961 Method of fabricating an interconnect structure having reduced internal stress Feb. 6, 2007
7169706 Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition Jan. 30, 2007
7166543 Methods for forming an enriched metal oxide surface for use in a semiconductor device Jan. 23, 2007
7166502 Method of manufacturing a thin film transistor Jan. 23, 2007
7163894 Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same Jan. 16, 2007
7163883 Edge seal for a semiconductor device Jan. 16, 2007
7160805 Inter-layer interconnection structure for large electrical connections Jan. 9, 2007
7157373 Sidewall sealing of porous dielectric materials Jan. 2, 2007
7153775 Conductive material patterning methods Dec. 26, 2006
7153774 Method of making a semiconductor device that has copper damascene interconnects with enhanced electromigration reliability Dec. 26, 2006
7153766 Metal barrier cap fabrication by polymer lift-off Dec. 26, 2006
7148189 Chemical-mechanical polishing slurry for polishing metal films Dec. 12, 2006
7148144 Method of forming copper sulfide layer over substrate Dec. 12, 2006
7148140 Partial plate anneal plate process for deposition of conductive fill material Dec. 12, 2006
7144812 Method of forming copper wire Dec. 5, 2006
7144811 Method of forming a protective layer over Cu filled semiconductor features Dec. 5, 2006
7144809 Production of elemental films using a boron-containing reducing agent Dec. 5, 2006
7144802 Vapor deposition of benzotriazole (BTA) for protecting copper interconnects Dec. 5, 2006
7144801 Bumping process to increase bump height Dec. 5, 2006
7141503 Methods for manufacturing a soft error and defect resistant pre-metal dielectric layer Nov. 28, 2006
7135396 Method of making a semiconductor structure Nov. 14, 2006
7132363 Stabilizing fluorine etching of low-k materials Nov. 7, 2006
7129582 Reducing the migration of grain boundaries Oct. 31, 2006
7129165 Method and structure to improve reliability of copper interconnects Oct. 31, 2006

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