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Class Information
Number: 438/685
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)
Description: Processes for forming the contact using a refractory metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof).










Patents under this class:
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Patent Number Title Of Patent Date Issued
8709943 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region Apr. 29, 2014
8679978 Method for forming a film including Zr, Hf or the like, and method for manufacturing a semiconductor device using the same Mar. 25, 2014
8673769 Methods and apparatuses for three dimensional integrated circuits Mar. 18, 2014
8673778 Tungsten film forming method Mar. 18, 2014
8669155 Hybrid channel semiconductor device and method for forming the same Mar. 11, 2014
8652890 Methods for fabricating integrated circuits with narrow, metal filled openings Feb. 18, 2014
8642468 NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors Feb. 4, 2014
8642471 Semiconductor structure and method for manufacturing the same Feb. 4, 2014
8633110 Titanium nitride films Jan. 21, 2014
8633101 Semiconductor device and manufacturing method of semiconductor device Jan. 21, 2014
8633109 Soft error rate (SER) reduction in advanced silicon processes Jan. 21, 2014
8629062 Method for forming tungsten film having low resistivity and good surface roughness and method for forming wiring of semiconductor device using the same Jan. 14, 2014
8629000 Thin film transistor, method for manufacturing the same, and semiconductor device Jan. 14, 2014
8569172 Noble metal/non-noble metal electrode for RRAM applications Oct. 29, 2013
8569868 Device having and method for forming fins with multiple widths Oct. 29, 2013
8563434 Semiconductor device contacts Oct. 22, 2013
8557702 Plasma-enhanced atomic layers deposition of conductive material over dielectric layers Oct. 15, 2013
8536058 Method of growing electrical conductors Sep. 17, 2013
8518282 Method of controlling etch microloading for a tungsten-containing layer Aug. 27, 2013
8513123 Method of manufacturing solid electrolytic capacitor Aug. 20, 2013
8506830 Pattern formation method Aug. 13, 2013
8497208 Semiconductor device and method for manufacturing the same Jul. 30, 2013
8461044 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region Jun. 11, 2013
8449731 Method and apparatus for increasing local plasma density in magnetically confined plasma May. 28, 2013
8435894 Depositing tungsten into high aspect ratio features May. 7, 2013
8435905 Manufacturing method of semiconductor device, and substrate processing apparatus May. 7, 2013
8435886 Method and system for binding halide-based contaminants May. 7, 2013
8431485 Manufacturing method for a buried circuit structure Apr. 30, 2013
8426973 Integrated circuit of decreased size Apr. 23, 2013
8409985 Methods for growing low-resistivity tungsten for high aspect ratio and small features Apr. 2, 2013
8409914 Method for fabricating resistive memory device Apr. 2, 2013
8399342 Method for fabricating semiconductor device with buried bit lines Mar. 19, 2013
8400257 Via-less thin film resistor with a dielectric cap Mar. 19, 2013
8389403 Semiconductor device and method for manufacturing the same Mar. 5, 2013
8377824 Methods and apparatus for depositing copper on tungsten Feb. 19, 2013
8357611 Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof Jan. 22, 2013
8337675 Method of plasma vapour deposition Dec. 25, 2012
8334208 Film-forming method and film-forming apparatus Dec. 18, 2012
8330234 Semiconductor device and manufacturing process therefor Dec. 11, 2012
8324095 Integration of ALD tantalum nitride for copper metallization Dec. 4, 2012
8314021 Method for fabricating semiconductor device with buried gates Nov. 20, 2012
8304021 Vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device Nov. 6, 2012
8278218 Electrical conductor line having a multilayer diffusion barrier for use in a semiconductor device and method for forming the same Oct. 2, 2012
8273658 Integrated circuit arrangement including vias having two sections, and method for producing the same Sep. 25, 2012
8237172 Semiconductor device having a silicon carbide substrate with an ohmic electrode layer in which a reaction layer is arranged in contact with the silicon carbide substrate Aug. 7, 2012
8227340 Method for producing a copper connection between two sides of a substrate Jul. 24, 2012
8216377 Method and system for binding halide-based contaminants Jul. 10, 2012
8216935 Methods of forming transistor gate constructions, methods of forming NAND transistor gate constructions, and methods forming DRAM transistor gate constructions Jul. 10, 2012
8207062 Method for improving adhesion of low resistivity tungsten/tungsten nitride layers Jun. 26, 2012
8198168 Method of manufacturing capacitive insulating film for capacitor Jun. 12, 2012

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