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Class Information
Number: 438/683
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Silicide > Of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)
Description: Processes for forming a contact using the chemical combination of silicon (Si) with one of the refractory group elements (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof).

Patents under this class:
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Patent Number Title Of Patent Date Issued
6410430 Enhanced ultra-shallow junctions in CMOS using high temperature silicide process Jun. 25, 2002
6406952 Process for device fabrication Jun. 18, 2002
6403473 Process for producing metal-containing layers Jun. 11, 2002
6399493 Method of silicide formation by silicon pretreatment Jun. 4, 2002
6399467 Method of salicide formation Jun. 4, 2002
6395595 Multi-layer tunneling device with a graded stoichiometry insulating layer May. 28, 2002
6395625 Method for manufacturing solder mask of printed circuit board May. 28, 2002
6391801 Method of forming a layer comprising tungsten oxide May. 21, 2002
6391774 Fabrication process of semiconductor device May. 21, 2002
6383906 Method of forming junction-leakage free metal salicide in a semiconductor wafer with ultra-low silicon consumption May. 7, 2002
6383905 Formation of micro rough poly surface for low sheet resistance salicided sub-quarter micron poly lines May. 7, 2002
6376885 Semiconductor structure with metal silicide and method for fabricated the structure Apr. 23, 2002
6376349 Process for forming a semiconductor device and a conductive structure Apr. 23, 2002
6376373 Method of manufacturing a semiconductor device Apr. 23, 2002
6376372 Approaches for mitigating the narrow poly-line effect in silicide formation Apr. 23, 2002
6372643 Method for forming a selective contact and local interconnect in situ and semiconductor devices carrying the same Apr. 16, 2002
6372673 Silicon-starved nitride spacer deposition Apr. 16, 2002
6365516 Advanced cobalt silicidation with in-situ hydrogen plasma clean Apr. 2, 2002
6365515 Chemical vapor deposition process Apr. 2, 2002
6365517 Process for depositing thin films containing titanium and nitrogen Apr. 2, 2002
6365511 Tungsten silicide nitride as a barrier for high temperature anneals to improve hot carrier reliability Apr. 2, 2002
6362095 Nickel silicide stripping after nickel silicide formation Mar. 26, 2002
6362088 Method of forming ohmic conductive components in a single chamber process Mar. 26, 2002
6358844 Tungsten deposition process with dual-step nucleation Mar. 19, 2002
6358846 Method of fabricating semiconductor device with polycide gate structure Mar. 19, 2002
6355545 Method and apparatus for wiring, wire, and integrated circuit Mar. 12, 2002
6355512 Method for producing semiconductor device Mar. 12, 2002
6352899 Raised silicide source/drain MOS transistors having enlarged source/drain contact regions and method Mar. 5, 2002
6350644 Ferroelectric thin-film device and method for producing the same Feb. 26, 2002
6348413 High pressure N2 RTA process for TiS2 formation Feb. 19, 2002
6346477 Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt Feb. 12, 2002
6342417 Methods of forming materials comprising tungsten and nitrogen Jan. 29, 2002
6342446 Plasma process for organic residue removal from copper Jan. 29, 2002
6340620 Method of fabricating a capacitor Jan. 22, 2002
6340637 Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants Jan. 22, 2002
6337272 Method of manufacturing a semiconductor device Jan. 8, 2002
6335282 Method of forming a titanium comprising layer and method of forming a conductive silicide contact Jan. 1, 2002
6335276 Method for manufacturing a thin film transistor array panel for a liquid crystal display and a photolithography method for fabricating thin films Jan. 1, 2002
6335273 Surface treatment of low-K SiOF to prevent metal interaction Jan. 1, 2002
6331478 Methods for manufacturing semiconductor devices having chamfered metal silicide layers Dec. 18, 2001
6329276 Method of forming self-aligned silicide in semiconductor device Dec. 11, 2001
6329283 Method of fabricating self-align-contact Dec. 11, 2001
6329287 Process for manufacturing an integrated circuit structure with metal salicide regions and metal salicide exclusion regions Dec. 11, 2001
6326289 Method of forming a silicide layer using a pre-amorphization implant which is blocked from source/drain regions by a layer of photoresist Dec. 4, 2001
6326690 Method of titanium/titanium nitride integration Dec. 4, 2001
6326306 Method of forming copper dual damascene structure Dec. 4, 2001
6319805 Semiconductor device having metal silicide film and manufacturing method thereof Nov. 20, 2001
6316360 High aspect ratio metallization structures for shallow junction devices, and methods of forming the same Nov. 13, 2001
6313036 Method for producing semiconductor device Nov. 6, 2001
6313031 Method of fabricating a contract structure having a composite barrier layer between a platinum layer and a polysilicon plug Nov. 6, 2001

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