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Class Information
Number: 438/683
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Silicide > Of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)
Description: Processes for forming a contact using the chemical combination of silicon (Si) with one of the refractory group elements (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof).

Patents under this class:
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Patent Number Title Of Patent Date Issued
6649520 Method of forming film for reduced ohmic contact resistance and ternary phase layer amorphous diffusion barrier Nov. 18, 2003
6645861 Self-aligned silicide process for silicon sidewall source and drain contacts Nov. 11, 2003
6642134 Semiconductor processing employing a semiconductor spacer Nov. 4, 2003
6638861 Method of eliminating voids in W plugs Oct. 28, 2003
6630394 System for reducing silicon-consumption through selective deposition Oct. 7, 2003
6627543 Low-temperature sputtering system and method for salicide process Sep. 30, 2003
6627525 Method for preventing polycide gate spiking Sep. 30, 2003
6623798 Chemical vapor deposition method for depositing silicide and apparatus for performing the same Sep. 23, 2003
6607964 Method of manufacturing semiconductor device Aug. 19, 2003
6605533 Process for forming low resistance metal silicide local interconnects Aug. 12, 2003
6605535 Method of filling trenches using vapor-liquid-solid mechanism Aug. 12, 2003
6602344 Ceramic film and method of manufacturing the same, semiconductor device, and piezoelectric device Aug. 5, 2003
6602786 One-step process for forming titanium silicide layer on polysilicon Aug. 5, 2003
6602774 Selective salicidation process for electronic devices integrated in a semiconductor substrate Aug. 5, 2003
6599644 Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide Jul. 29, 2003
6599829 Method for photoresist strip, sidewall polymer removal and passivation for aluminum metallization Jul. 29, 2003
6599795 Method of manufacturing semiconductor device including a step of forming a silicide layer, and semiconductor device manufactured thereby Jul. 29, 2003
6596596 Methods of forming a field effect transistors Jul. 22, 2003
6593219 Method for fabricating electrode structure and method for fabricating semiconductor device Jul. 15, 2003
6593234 Methods of utilizing metal rich silicide in forming semiconductor constructions Jul. 15, 2003
6586330 Method for depositing conformal nitrified tantalum silicide films by thermal CVD Jul. 1, 2003
6586320 Graded/stepped silicide process to improve mos transistor Jul. 1, 2003
6586321 Method for forming metal silicide layer Jul. 1, 2003
6583052 Method of fabricating a semiconductor device having reduced contact resistance Jun. 24, 2003
6582982 Composition for wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof Jun. 24, 2003
6582757 Method for tungsten deposition without fluorine-contaminated silicon substrate Jun. 24, 2003
6576543 Method for selectively depositing diffusion barriers Jun. 10, 2003
6573182 Chemical vapor deposition using organometallic precursors Jun. 3, 2003
6573180 PECVD method of forming a tungsten silicide layer on a polysilicon layer Jun. 3, 2003
6573178 Manufacturing method for semiconductor device and semiconductor manufacturing apparatus Jun. 3, 2003
6569766 Method for forming a silicide of metal with a high melting point in a semiconductor device May. 27, 2003
6569743 Method of fabricating a semiconductor device May. 27, 2003
6566261 Semiconductor device and method of manufacturing the same May. 20, 2003
6566236 Gate structures with increased etch margin for self-aligned contact and the method of forming the same May. 20, 2003
6566214 Method of making a semiconductor device by annealing a metal layer to form metal silicide and using the metal silicide as a hard mask to pattern a polysilicon layer May. 20, 2003
6562685 Method of fabricating field effect transistor May. 13, 2003
6559018 Silicon implant in a salicided cobalt layer to reduce cobalt-silicon agglomeration May. 6, 2003
6559041 Semiconductor device and method for manufacturing same May. 6, 2003
6559053 Method of passivating an oxide surface subjected to a conductive material anneal May. 6, 2003
6555473 Field effect transistors and methods of forming a field effect transistor Apr. 29, 2003
6551928 Method of forming a semiconductor device with a multi-layer WSix film with small grain size structure Apr. 22, 2003
6548341 Process for producing a first electrode and a second electrode, electronic component and electronic memory element Apr. 15, 2003
6548403 Silicon oxide liner for reduced nickel silicide bridging Apr. 15, 2003
6548421 Method for forming a refractory-metal-silicide layer in a semiconductor device Apr. 15, 2003
6541380 Plasma etching process for metals and metal oxides, including metals and metal oxides inert to oxidation Apr. 1, 2003
6537910 Forming metal silicide resistant to subsequent thermal processing Mar. 25, 2003
6534400 Method for depositing a tungsten silicide layer Mar. 18, 2003
6534402 Method of fabricating self-aligned silicide Mar. 18, 2003
6531385 Method of forming metal/dielectric multi-layered interconnects Mar. 11, 2003

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