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Class Information
Number: 438/683
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Silicide > Of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)
Description: Processes for forming a contact using the chemical combination of silicon (Si) with one of the refractory group elements (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof).










Patents under this class:
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Patent Number Title Of Patent Date Issued
7138013 Ceramic film and method of manufacturing the same, semiconductor device, and piezoelectric device Nov. 21, 2006
7135396 Method of making a semiconductor structure Nov. 14, 2006
7122472 Method for forming self-aligned dual fully silicided gates in CMOS devices Oct. 17, 2006
7122474 Method for forming barrier metal of semiconductor device Oct. 17, 2006
7119012 Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation Oct. 10, 2006
7101783 Method for forming bit-line of semiconductor device Sep. 5, 2006
7094685 Integration of titanium and titanium nitride layers Aug. 22, 2006
7078342 Method of forming a gate stack Jul. 18, 2006
7078341 Method of depositing metal layers from metal-carbonyl precursors Jul. 18, 2006
7071096 Method of forming a conductive barrier layer within critical openings by a final deposition step after a re-sputter deposition Jul. 4, 2006
7071102 Method of forming a metal silicide layer on non-planar-topography polysilicon Jul. 4, 2006
7067422 Method of forming a tantalum-containing gate electrode structure Jun. 27, 2006
7067410 Method of forming a metal silicide Jun. 27, 2006
7060609 Method of manufacturing a semiconductor device Jun. 13, 2006
7056796 Method for fabricating silicide by heating an epitaxial layer and a metal layer formed thereon Jun. 6, 2006
7037796 Method of manufacturing spacers on sidewalls of titanium polycide gate May. 2, 2006
7037829 Compound structure for reduced contact resistance May. 2, 2006
7037830 PVD deposition process for enhanced properties of metal films May. 2, 2006
7033939 Chemistry for chemical vapor deposition of titanium containing films Apr. 25, 2006
7033933 Manufacturing method of semiconductor device Apr. 25, 2006
7026243 Methods of forming conductive material silicides by reaction of metal with silicon Apr. 11, 2006
7022601 Method of manufacturing a semiconductor device Apr. 4, 2006
7023059 Trenches to reduce lateral silicide growth in integrated circuit technology Apr. 4, 2006
7008868 Passivation scheme for bumped wafers Mar. 7, 2006
7005357 Low stress sidewall spacer in integrated circuit technology Feb. 28, 2006
7001842 Methods of fabricating semiconductor devices having salicide Feb. 21, 2006
6987062 Manufacturing method of semiconductor device Jan. 17, 2006
6987050 Self-aligned silicide (salicide) process for low resistivity contacts to thin film silicon-on-insulator and bulk MOSFETS and for shallow junctions Jan. 17, 2006
6972250 Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device Dec. 6, 2005
6969675 Method of forming multilayer diffusion barrier for copper interconnections Nov. 29, 2005
6969678 Multi-silicide in integrated circuit technology Nov. 29, 2005
6967159 Systems and methods for forming refractory metal nitride layers using organic amines Nov. 22, 2005
6958294 Method for photoresist strip, sidewall polymer removal and passivation for aluminum metallization Oct. 25, 2005
6955931 Method for detecting silicide encroachment of a gate electrode in a semiconductor arrangement Oct. 18, 2005
6953749 Methods of forming refractory metal silicide components and methods of restricting silicon surface migration of a silicon structure Oct. 11, 2005
6943110 Wafer processing apparatus and methods for depositing cobalt silicide Sep. 13, 2005
6943097 Atomic layer deposition of metallic contacts, gates and diffusion barriers Sep. 13, 2005
6936528 Method of forming cobalt silicide film and method of manufacturing semiconductor device having cobalt silicide film Aug. 30, 2005
6936535 Copper interconnect structure having stuffed diffusion barrier Aug. 30, 2005
6930029 Method of passivating an oxide surface subjected to a conductive material anneal Aug. 16, 2005
6919273 Method for forming TiSiN film, diffusion preventive film comprising TiSiN film, semiconductor device and its production method, and apparatus for forming TiSiN film Jul. 19, 2005
6911391 Integration of titanium and titanium nitride layers Jun. 28, 2005
6906420 Semiconductor device Jun. 14, 2005
6893905 Method of forming substantially hillock-free aluminum-containing components May. 17, 2005
6881672 Selective silicide blocking Apr. 19, 2005
6881670 Interconnect process and method for removing metal silicide Apr. 19, 2005
6878627 Semiconductor device with cobalt silicide contacts and method of making the same Apr. 12, 2005
6878626 TiW platinum interconnect and method of making the same Apr. 12, 2005
6875705 Method of high selectivity wet etching of salicides Apr. 5, 2005
6861356 Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film Mar. 1, 2005

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