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Class Information
Number: 438/683
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Silicide > Of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)
Description: Processes for forming a contact using the chemical combination of silicon (Si) with one of the refractory group elements (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof).










Patents under this class:
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Patent Number Title Of Patent Date Issued
5510295 Method for lowering the phase transformation temperature of a metal silicide Apr. 23, 1996
5500249 Uniform tungsten silicide films produced by chemical vapor deposition Mar. 19, 1996
5482874 Inversion implant isolation process Jan. 9, 1996
5451545 Process for forming stable local interconnect/active area silicide structure VLSI applications Sep. 19, 1995
5444024 Method for low energy implantation of argon to control titanium silicide formation Aug. 22, 1995
5444018 Metallization process for a semiconductor device Aug. 22, 1995
5432129 Method of forming low resistance contacts at the junction between regions having different conductivity types Jul. 11, 1995
5422311 Method for manufacturing a conductor layer in a semiconductor device Jun. 6, 1995
5421974 Integrated circuit having silicide-nitride based multi-layer metallization Jun. 6, 1995
5418188 Method for controlled positioning of a compound layer in a multilayer device May. 23, 1995
5416034 Method of making resistor with silicon-rich silicide contacts for an integrated circuit May. 16, 1995
5405806 Method for forming a metal silicide interconnect in an integrated circuit Apr. 11, 1995
5401674 Germanium implant for use with ultra-shallow junctions Mar. 28, 1995
5395799 Method of fabricating semiconductor devices having electrodes comprising layers of doped tungsten disilicide Mar. 7, 1995
5395798 Refractory metal silicide deposition process Mar. 7, 1995
5384289 Reductive elimination chemical vapor deposition processes utilizing organometallic precursor compounds in semiconductor wafer processing Jan. 24, 1995
5376405 Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers Dec. 27, 1994
5369055 Method for fabricating titanium silicide contacts Nov. 29, 1994
5344792 Pulsed plasma enhanced CVD of metal silicide conductive films such as TiSi.sub.2 Sep. 6, 1994
5278100 Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers Jan. 11, 1994
5252518 Method for forming a mixed phase TiN/TiSi film for semiconductor manufacture using metal organometallic precursors and organic silane Oct. 12, 1993
5242860 Method for the formation of tin barrier layer with preferential (111) crystallographic orientation Sep. 7, 1993
5240880 Ti/TiN/Ti contact metallization Aug. 31, 1993
5240739 Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers Aug. 31, 1993
5231056 Tungsten silicide (WSi.sub.x) deposition process for semiconductor manufacture Jul. 27, 1993
5173327 LPCVD process for depositing titanium films for semiconductor devices Dec. 22, 1992
5173450 Titanium silicide local interconnect process Dec. 22, 1992
5151385 Method of manufacturing a metallic silicide transparent electrode Sep. 29, 1992
5122479 Semiconductor device comprising a silicide layer, and method of making the device Jun. 16, 1992
5075251 Tungsten silicide self-aligned formation process Dec. 24, 1991
5070038 Method of forming low-resistive contact to N+/P+ preohmic regions in very large scale integrated devices Dec. 3, 1991
5066615 Photolithographic processes using thin coatings of refractory metal silicon nitrides as antireflection layers Nov. 19, 1991
5043300 Single anneal step process for forming titanium silicide on semiconductor wafer Aug. 27, 1991
5023201 Selective deposition of tungsten on TiSi.sub.2 Jun. 11, 1991
4983547 Method of forming a silicide film Jan. 8, 1991
4957777 Very low pressure chemical vapor deposition process for deposition of titanium silicide films Sep. 18, 1990
4954214 Method for making interconnect structures for VLSI devices Sep. 4, 1990
4908334 Method for forming metallic silicide films on silicon substrates by ion beam deposition Mar. 13, 1990
4900257 Method of making a polycide gate using a titanium nitride capping layer Feb. 13, 1990
4871691 Selective deposition process of a refractory metal silicide onto silicon areas Oct. 3, 1989
4851295 Low resistivity tungsten silicon composite film Jul. 25, 1989
4818723 Silicide contact plug formation technique Apr. 4, 1989
4788582 Semiconductor device and method of manufacturing the same Nov. 29, 1988
4777150 Process for the formation of a refractory metal silicide layer on a substrate for producing interconnection Oct. 11, 1988
4766006 Low pressure chemical vapor deposition of metal silicide Aug. 23, 1988
4751198 Process for making contacts and interconnections using direct-reacted silicide Jun. 14, 1988
4746549 Method for forming thin film of refractory material May. 24, 1988
4737474 Silicide to silicon bonding process Apr. 12, 1988
RE32613 Method of making contact electrodes to silicon gate, and source and drain regions, of a semiconductor device Feb. 23, 1988
4715109 Method of forming a high density vertical stud titanium silicide for reachup contact applications Dec. 29, 1987

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