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Class Information
Number: 438/683
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Silicide > Of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)
Description: Processes for forming a contact using the chemical combination of silicon (Si) with one of the refractory group elements (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof).










Patents under this class:
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Patent Number Title Of Patent Date Issued
5960319 Fabrication method for a semiconductor device Sep. 28, 1999
5956613 Method for improvement of TiN CVD film quality Sep. 21, 1999
5956616 Method of depositing thin films by plasma-enhanced chemical vapor deposition Sep. 21, 1999
5956584 Method of making self-aligned silicide CMOS transistors Sep. 21, 1999
5956617 Method of manufacturing a semiconductor device employing salicide technology Sep. 21, 1999
5953631 Low stress, highly conformal CVD metal thin film Sep. 14, 1999
5953632 Method for manufacturing semiconductor device comprising a silicide film Sep. 14, 1999
5953633 Method for manufacturing self-aligned titanium salicide using two two-step rapid thermal annealing steps Sep. 14, 1999
5950083 Method for fabricating CMOS transistor with self-aligned silicide (salicide) structure Sep. 7, 1999
5946595 Method of forming a local interconnect between electronic devices on a semiconductor substrate Aug. 31, 1999
5946594 Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants Aug. 31, 1999
5946599 Method of manufacturing a semiconductor IC device Aug. 31, 1999
5946598 Process of fabricating metal gate electrode Aug. 31, 1999
5945350 Methods for use in formation of titanium nitride interconnects and interconnects formed using same Aug. 31, 1999
5940733 Method of making polysilicon/tungsten silicide multilayer composite on an integrated circuit structure Aug. 17, 1999
5937319 Method of making a metal oxide semiconductor (MOS) transistor polysilicon gate with a size beyond photolithography limitation by using polysilicidation and selective etching Aug. 10, 1999
5937325 Formation of low resistivity titanium silicide gates in semiconductor integrated circuits Aug. 10, 1999
5933739 Self-aligned silicidation structure and method of formation thereof Aug. 3, 1999
5933718 Method for electrostatic discharge protection through electric field emission Aug. 3, 1999
5930671 CVD titanium silicide for contract hole plugs Jul. 27, 1999
5926737 Use of TiCl.sub.4 etchback process during integrated CVD-Ti/TiN wafer processing Jul. 20, 1999
5924009 Titanium silicide interconnect method Jul. 13, 1999
5924011 Silicide process for mixed mode product Jul. 13, 1999
5924010 Method for simultaneously fabricating salicide and self-aligned barrier Jul. 13, 1999
5918130 Transistor fabrication employing formation of silicide across source and drain regions prior to formation of the gate conductor Jun. 29, 1999
5915183 Raised source/drain using recess etch of polysilicon Jun. 22, 1999
5915197 Fabrication process for semiconductor device Jun. 22, 1999
5915204 Method of manufacturing a semiconductor device including a metal silicide layer Jun. 22, 1999
5913124 Method of making a self-aligned silicide Jun. 15, 1999
5913145 Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures Jun. 15, 1999
5913139 Method of manufacturing a semiconductor device with local interconnect of metal silicide Jun. 15, 1999
5908314 Two-step metal salicide semiconductor process Jun. 1, 1999
5907784 Method of making multi-layer gate structure with different stoichiometry silicide layers May. 25, 1999
5907789 Method of forming a contact-hole of a semiconductor element May. 25, 1999
5904533 Metal salicide-CMP-metal salicide semiconductor process May. 18, 1999
5904517 Ultra thin high K spacer material for use in transistor fabrication May. 18, 1999
5904564 Method for fabricating MOSFET having cobalt silicide film May. 18, 1999
5899720 Process of fabricating salicide structure from high-purity reproducible cobalt layer without sacrifice of leakage current and breakdown voltage of P-N junction May. 4, 1999
5897373 Method of manufacturing semiconductor components having a titanium nitride layer Apr. 27, 1999
5895261 Process for making integrated circuit structure comprising local area interconnects formed over semiconductor substrate by selective deposition on seed layer in patterned trench Apr. 20, 1999
5895245 Plasma ash for silicon surface preparation Apr. 20, 1999
5893741 Method for simultaneously forming local interconnect with silicided elevated source/drain MOSFET's Apr. 13, 1999
5891785 Process for forming self-aligned silicide Apr. 6, 1999
5888903 Self-aligned silicide process Mar. 30, 1999
5882975 Method of fabricating salicide-structure semiconductor device Mar. 16, 1999
5883003 Method for producing a semiconductor device comprising a refractory metal silicide layer Mar. 16, 1999
5877085 Method of manufacturing semiconductor device Mar. 2, 1999
5876796 Process for selectively depositing a refractory metal silicide on silicon, and silicon wafer metallized using this process Mar. 2, 1999
5874331 Method of manufacturing CMOS semiconductor devices by forming a salicide structure Feb. 23, 1999
5874342 Process for forming MOS device in integrated circuit structure using cobalt silicide contacts as implantation media Feb. 23, 1999

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