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Class Information
Number: 438/683
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Silicide > Of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)
Description: Processes for forming a contact using the chemical combination of silicon (Si) with one of the refractory group elements (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof).

Patents under this class:
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Patent Number Title Of Patent Date Issued
6136705 Self-aligned dual thickness cobalt silicide layer formation process Oct. 24, 2000
6136706 Process for making titanium Oct. 24, 2000
6136677 Method of fabricating semiconductor chips with silicide and implanted junctions Oct. 24, 2000
6130159 Apparatus and methods for minimizing as-deposited stress in tungsten silicide films Oct. 10, 2000
6130157 Method to form an encapsulation layer over copper interconnects Oct. 10, 2000
6127269 Method for enhancing sheet resistance uniformity of chemical vapor deposited (CVD) tungsten silicide layers Oct. 3, 2000
6127270 Methods of forming refractory metal silicide components and methods of restricting silicon surface migration of a silicon structure Oct. 3, 2000
6124190 Method of manufacturing semiconductor device with silicide layer without short circuit Sep. 26, 2000
6121125 Method of forming polycide gate Sep. 19, 2000
6121137 Method of fabricating semiconductor device Sep. 19, 2000
6121139 Ti-rich TiN insertion layer for suppression of bridging during a salicide procedure Sep. 19, 2000
6117773 Methods of fabricating microelectronic devices having increased impurity concentration between a metal silicide contact surface Sep. 12, 2000
6117743 Method of manufacturing MOS device using anti reflective coating Sep. 12, 2000
6117745 Bistable fuse by amorphization of polysilicon Sep. 12, 2000
6110811 Selective CVD TiSi.sub.2 deposition with TiSi.sub.2 liner Aug. 29, 2000
6110796 Method of improving junction leakage problem of shallow trench isolation by covering said STI with an insulating layer during salicide process Aug. 29, 2000
6110821 Method for forming titanium silicide in situ Aug. 29, 2000
6107194 Method of fabricating an integrated circuit Aug. 22, 2000
6107199 Method for improving the morphology of refractory metal thin films Aug. 22, 2000
6107176 Method of fabricating a gate having a barrier of titanium silicide Aug. 22, 2000
6107096 Method of fabricating a salicide-structured MOS semiconductor device having a cobalt disilicied film Aug. 22, 2000
6103566 Method for manufacturing semiconductor integrated circuit device having a titanium electrode Aug. 15, 2000
6103622 Silicide process for mixed mode product with dual layer capacitor and polysilicon resistor which is protected with a capacitor protective oxide during silicidation of FET device Aug. 15, 2000
6103620 Method for producing titanium silicide Aug. 15, 2000
6103621 Silicide process for mixed mode product with dual layer capacitor which is protected by a capacitor protective oxide during silicidation of FET device Aug. 15, 2000
6100186 Method of selectively forming a contact in a contact hole Aug. 8, 2000
6100191 Method for forming self-aligned silicide layers on sub-quarter micron VLSI circuits Aug. 8, 2000
6096647 Method to form CoSi.sub.2 on shallow junction by Si implantation Aug. 1, 2000
6096619 Method of manufacturing a semiconductor device comprising a capacitor with an intrinsic polysilicon electrode Aug. 1, 2000
6096630 Method for fabricating semiconductor device Aug. 1, 2000
6096638 Method for forming a refractory metal silicide layer Aug. 1, 2000
6096639 Method of forming a local interconnect by conductive layer patterning Aug. 1, 2000
6093645 Elimination of titanium nitride film deposition in tungsten plug technology using PE-CVD-TI and in-situ plasma nitridation Jul. 25, 2000
6093646 Manufacturing method for a thin film with an anti-reflection rough surface Jul. 25, 2000
6093650 Method for fully planarized conductive line for a stack gate Jul. 25, 2000
6090708 Method of forming a crystalline phase material, electrically conductive line and refractory metal silicide Jul. 18, 2000
6090653 Method of manufacturing CMOS transistors Jul. 18, 2000
6090706 Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein Jul. 18, 2000
6087259 Method for forming bit lines of semiconductor devices Jul. 11, 2000
6087254 Technique for elimination of pitting on silicon substrate during gate stack etch Jul. 11, 2000
6083817 Cobalt silicidation using tungsten nitride capping layer Jul. 4, 2000
6083780 Semiconductor device and method of fabrication thereof Jul. 4, 2000
6080648 Method of fabricating semiconductor device Jun. 27, 2000
6074925 Method for fabricating semiconductor device with polycide structure for electrode or interconnect Jun. 13, 2000
6074923 Method of fabricating metal-oxide-semiconductor transistor Jun. 13, 2000
6074956 Method for preventing silicide residue formation in a semiconductor device Jun. 13, 2000
6074920 Self-aligned implant under transistor gate Jun. 13, 2000
6074938 Method of forming a semiconductor device comprising a dummy polysilicon gate electrode short-circuited to a dummy element region in a substrate Jun. 13, 2000
6071552 Insitu formation of TiSi.sub.2 /TiN bi-layer structures using self-aligned nitridation treatment on underlying CVD-TiSi.sub.2 layer Jun. 6, 2000
6071811 Deposition of titanium nitride films having improved uniformity Jun. 6, 2000

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