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Class Information
Number: 438/682
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Silicide
Description: Processes wherein the conductive material is formed by the chemical combination of Silicon (Si) with a metal atom.










Sub-classes under this class:

Class Number Class Name Patents
438/683 Of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) 783


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Patent Number Title Of Patent Date Issued
8679977 Method and apparatus providing multi-planed array memory device Mar. 25, 2014
8673696 SOI semiconductor device comprising a substrate diode with reduced metal silicide leakage Mar. 18, 2014
8674410 Method of manufacturing metal silicide and semiconductor structure using the same Mar. 18, 2014
8669145 Method and structure for strained FinFET devices Mar. 11, 2014
8658485 Semiconductor device and method of fabricating the same Feb. 25, 2014
8658520 Method of manufacturing semiconductor device Feb. 25, 2014
8652912 Methods of fabricating a transistor gate including cobalt silicide Feb. 18, 2014
8642433 Method for manufacturing semiconductor device Feb. 4, 2014
8642434 Structure and method for mobility enhanced MOSFETS with unalloyed silicide Feb. 4, 2014
8617992 Method of forming metal silicide contact and metal interconnect Dec. 31, 2013
8618668 Semiconductor contact barrier Dec. 31, 2013
8603915 Multi-stage silicidation process Dec. 10, 2013
8580686 Silicidation and/or germanidation on SiGe or Ge by cosputtering Ni and Ge and using an intralayer for thermal stability Nov. 12, 2013
8569170 Manufacturing method of semiconductor device comprising silicide layer with varied thickness Oct. 29, 2013
8569171 Mask-based silicidation for FEOL defectivity reduction and yield boost Oct. 29, 2013
8563424 Process for forming cobalt and cobalt silicide materials in tungsten contact applications Oct. 22, 2013
8546259 Nickel silicide formation for semiconductor components Oct. 1, 2013
8541281 Replacement gate process flow for highly scaled semiconductor devices Sep. 24, 2013
8536011 Junction leakage suppression in memory devices Sep. 17, 2013
8536052 Semiconductor device comprising contact elements with silicided sidewall regions Sep. 17, 2013
8530303 Method of fabricating semiconductor device Sep. 10, 2013
8518765 Aqua regia and hydrogen peroxide HCl combination to remove Ni and NiPt residues Aug. 27, 2013
8513117 Process to remove Ni and Pt residues for NiPtSi applications Aug. 20, 2013
8513122 Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor Aug. 20, 2013
8513714 Electric contacting of semiconductor components having low contact resistance Aug. 20, 2013
8507378 Method and structure for self aligned contact for integrated circuits Aug. 13, 2013
8501623 Method of forming a semiconductor device having a metal silicide and alloy layers as electrode Aug. 6, 2013
8492275 Method to form uniform silicide by selective implantation Jul. 23, 2013
8486828 Semiconductor device manufacturing method Jul. 16, 2013
8476164 Method of manufacturing semiconductor device with silicide Jul. 2, 2013
8470707 Silicide method Jun. 25, 2013
8466064 Semiconductor integrated circuit device and method of manufacturing a semiconductor integrated circuit device Jun. 18, 2013
8466058 Process to remove Ni and Pt residues for NiPtSi applications using chlorine gas Jun. 18, 2013
8445372 Selective silicide formation using resist etch back May. 21, 2013
8440523 Micromechanical device and methods to fabricate same using hard mask resistant to structure release etch May. 14, 2013
8435889 Methods of forming CoSi.sub.2, methods of forming field effect transistors, and methods of forming conductive contacts May. 7, 2013
8435893 Semiconductor device and method of formation May. 7, 2013
8415254 Method for removing dummy poly in a gate last process Apr. 9, 2013
8409989 Structure and method to fabricate a body contact Apr. 2, 2013
8404589 Silicide contact formation Mar. 26, 2013
8394194 Single crystal reo buffer on amorphous SiO.sub.x Mar. 12, 2013
8377556 Material for growth of carbon nanotubes Feb. 19, 2013
8372750 Method and system for improved nickel silicide Feb. 12, 2013
8367548 Stable silicide films and methods for making the same Feb. 5, 2013
8367549 Method of manufacturing semiconductor device Feb. 5, 2013
8349663 Vertical diode based memory cells having a lowered programming voltage and methods of forming the same Jan. 8, 2013
8349718 Self-aligned silicide formation on source/drain through contact via Jan. 8, 2013
8343870 Semiconductor device and method of manufacturing the same Jan. 1, 2013
8330234 Semiconductor device and manufacturing process therefor Dec. 11, 2012
8324035 Manufacturing method of SOI MOS device eliminating floating body effects Dec. 4, 2012

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