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Class Information
Number: 438/682
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Silicide
Description: Processes wherein the conductive material is formed by the chemical combination of Silicon (Si) with a metal atom.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 438/683 |
Of refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) |
691 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622386 |
Method for improved formation of nickel silicide contacts in semiconductor devices |
Nov. 24, 2009 |
| 7622387 |
Gate electrode silicidation process |
Nov. 24, 2009 |
| 7618855 |
Manufacturing method of semiconductor device |
Nov. 17, 2009 |
| 7618891 |
Method for forming self-aligned metal silicide contacts |
Nov. 17, 2009 |
| 7611990 |
Deposition methods for barrier and tungsten materials |
Nov. 3, 2009 |
| 7605068 |
Semiconductor device having a silicide layer and manufacturing method thereof |
Oct. 20, 2009 |
| 7605077 |
Dual metal integration scheme based on full silicidation of the gate electrode |
Oct. 20, 2009 |
| 7598572 |
Silicided polysilicon spacer for enhanced contact area |
Oct. 6, 2009 |
| 7585771 |
Method of manufacturing semiconductor device |
Sep. 8, 2009 |
| 7585770 |
Method of growing carbon nanotubes and method of manufacturing field emission device having the same |
Sep. 8, 2009 |
| 7585738 |
Method of forming a fully silicided semiconductor device with independent gate and source/drain doping and related device |
Sep. 8, 2009 |
| 7582563 |
Method for fabricating fully silicided gate |
Sep. 1, 2009 |
| 7572723 |
Micropad for bonding and a method therefor |
Aug. 11, 2009 |
| 7569483 |
Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatus |
Aug. 4, 2009 |
| 7566662 |
Method of dry cleaning silicon surface prior to forming self-aligned nickel silicide layer |
Jul. 28, 2009 |
| 7560331 |
Method for forming a silicided gate |
Jul. 14, 2009 |
| 7557040 |
Method of manufacture of semiconductor device |
Jul. 7, 2009 |
| 7557032 |
Silicided recessed silicon |
Jul. 7, 2009 |
| 7553762 |
Method for forming metal silicide layer |
Jun. 30, 2009 |
| 7553766 |
Method of fabricating semiconductor integrated circuit device |
Jun. 30, 2009 |
| 7550372 |
Method of fabricating conductive lines with silicide layer |
Jun. 23, 2009 |
| 7550396 |
Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device |
Jun. 23, 2009 |
| 7547607 |
Methods of fabricating integrated circuit capacitors using a dry etching process |
Jun. 16, 2009 |
| 7547608 |
Polysilicon hard mask for enhanced alignment signal |
Jun. 16, 2009 |
| 7544616 |
Methods of forming nitride read only memory and word lines thereof |
Jun. 9, 2009 |
| 7544576 |
Diffusion barrier for nickel silicides in a semiconductor fabrication process |
Jun. 9, 2009 |
| 7541280 |
Method of foming a micromechanical structure |
Jun. 2, 2009 |
| 7538016 |
Signal and/or ground planes with double buried insulator layers and fabrication process |
May. 26, 2009 |
| 7534732 |
Semiconductor devices with copper interconnects and composite silicon nitride capping layers |
May. 19, 2009 |
| 7531457 |
Method of fabricating suspended structure |
May. 12, 2009 |
| 7531459 |
Methods of forming self-aligned silicide layers using multiple thermal processes |
May. 12, 2009 |
| 7528070 |
Sputtering apparatus and method for forming metal silicide layer using the same |
May. 5, 2009 |
| 7517795 |
Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation |
Apr. 14, 2009 |
| 7504336 |
Methods for forming CMOS devices with intrinsically stressed metal silicide layers |
Mar. 17, 2009 |
| 7504330 |
Method of forming an insulative film |
Mar. 17, 2009 |
| 7504329 |
Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET |
Mar. 17, 2009 |
| 7501333 |
Work function adjustment on fully silicided (FUSI) gate |
Mar. 10, 2009 |
| 7501345 |
Selective silicide formation by electrodeposit displacement reaction |
Mar. 10, 2009 |
| 7494878 |
Metal-oxide-semiconductor transistor and method of forming the same |
Feb. 24, 2009 |
| 7488637 |
CMOS image sensor and method for forming the same |
Feb. 10, 2009 |
| 7485572 |
Method for improved formation of cobalt silicide contacts in semiconductor devices |
Feb. 3, 2009 |
| 7482282 |
Use of dilute hydrochloric acid in advanced interconnect contact clean in nickel semiconductor technologies |
Jan. 27, 2009 |
| 7476617 |
Semiconductor device with epitaxial C49-titanium silicide (TiSi.sub.2) layer and method for fabricating the same |
Jan. 13, 2009 |
| 7465664 |
Method for fabricating semiconductor device to lower source/drain sheet resistance |
Dec. 16, 2008 |
| 7465634 |
Method of forming integrated circuit devices having n-MOSFET and p-MOSFET transistors with elevated and silicided source/drain structures |
Dec. 16, 2008 |
| 7459382 |
Field effect device with reduced thickness gate |
Dec. 2, 2008 |
| 7459396 |
Method for thin film deposition using multi-tray film precursor evaporation system |
Dec. 2, 2008 |
| 7456096 |
Method of manufacturing silicide layer for semiconductor device |
Nov. 25, 2008 |
| 7449410 |
Methods of forming CoSi.sub.2, methods of forming field effect transistors, and methods of forming conductive contacts |
Nov. 11, 2008 |
| 7446062 |
Device having dual etch stop liner and reformed silicide layer and related methods |
Nov. 4, 2008 |
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