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Class Information
Number: 438/681
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Utilizing chemical vapor deposition (i.e., cvd) > Of organo-metallic precursor (i.e., mocvd)
Description: Processes where the chemical vapor deposition process utilizes an organo-metallic compound.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
6548404 Method and apparatus for manufacturing semiconductor devices Apr. 15, 2003
6548683 Methods, complexes and system for forming metal-containing films Apr. 15, 2003
6541067 Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and method of using same Apr. 1, 2003
6534404 Method of depositing diffusion barrier for copper interconnect in integrated circuit Mar. 18, 2003
6534133 Methodology for in-situ doping of aluminum coatings Mar. 18, 2003
6531192 Chemical vapor deposition process for depositing titanium nitride films from an organo-metallic compound Mar. 11, 2003
6528415 Method of forming a metal line in a semiconductor device Mar. 4, 2003
6509268 Thermal densification in the early stages of copper MOCVD for depositing high quality Cu films with good adhesion and trench filling characteristics Jan. 21, 2003
6495457 Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds Dec. 17, 2002
6495458 Method for producing low carbon/oxygen conductive layers Dec. 17, 2002
6495473 Substrate processing apparatus and method of manufacturing semiconductor device Dec. 17, 2002
6495459 Solutions of metal-comprising materials, methods of forming metal-comprising layers, methods of storing metal-comprising materials, and methods of forming capacitors Dec. 17, 2002
6492268 Method of forming a copper wiring in a semiconductor device Dec. 10, 2002
6491978 Deposition of CVD layers for copper metallization using novel metal organic chemical vapor deposition (MOCVD) precursors Dec. 10, 2002
6488984 Film deposition method and apparatus Dec. 3, 2002
6489238 Method to reduce photoresist contamination from silicon carbide films Dec. 3, 2002
6486058 Method of forming a photoresist pattern using WASOOM Nov. 26, 2002
6482753 Substrate processing apparatus and method for manufacturing semiconductor device Nov. 19, 2002
6479110 Multiphase low dielectric constant material and method of deposition Nov. 12, 2002
6468903 Pre-treatment of reactor parts for chemical vapor deposition reactors Oct. 22, 2002
6465348 Method of fabricating an MOCVD titanium nitride layer utilizing a pulsed plasma treatment to remove impurities Oct. 15, 2002
6461961 Methods of manufacturing semiconductor devices with ruthenium films formed by CVD using an oxygen-containing reactant gas Oct. 8, 2002
6458684 Single step process for blanket-selective CVD aluminum deposition Oct. 1, 2002
6455421 Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition Sep. 24, 2002
6455442 Process for the preparation of UV protective coatings by plasma-enhanced deposition Sep. 24, 2002
6451695 Radical-assisted sequential CVD Sep. 17, 2002
6444580 Method of reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface and semiconductor device thereby formed Sep. 3, 2002
6444818 Metal complexes with chelating C-, N-donor ligands for forming metal-containing films Sep. 3, 2002
6444041 Methods, complexes, and system for forming metal-containing films Sep. 3, 2002
6436819 Nitrogen treatment of a metal nitride/metal stack Aug. 20, 2002
6436195 Method of fabricating a MOS device Aug. 20, 2002
6436822 Method for making a carbon doped oxide dielectric material Aug. 20, 2002
6413864 Method of manufacturing a copper metal wiring in a semiconductor device Jul. 2, 2002
6387444 Single substrate processing CVD procedure for depositing a metal film using first and second CVD processes in first and second process chambers May. 14, 2002
6387802 Nucleation and deposition of Pt films using ultraviolet irradiation May. 14, 2002
6380081 Method of vaporizing liquid sources and apparatus therefor Apr. 30, 2002
6379748 Tantalum amide precursors for deposition of tantalum nitride on a substrate Apr. 30, 2002
6380080 Methods for preparing ruthenium metal films Apr. 30, 2002
6376371 Method of forming a semiconductor device Apr. 23, 2002
6372643 Method for forming a selective contact and local interconnect in situ and semiconductor devices carrying the same Apr. 16, 2002
6368954 Method of copper interconnect formation using atomic layer copper deposition Apr. 9, 2002
6369256 Self-reducible copper(II) source reagents for chemical vapor deposition of copper metal Apr. 9, 2002
6355562 Adhesion promotion method for CVD copper metallization in IC applications Mar. 12, 2002
6355561 ALD method to improve surface coverage Mar. 12, 2002
6352944 Method of depositing an aluminum nitride comprising layer over a semiconductor substrate Mar. 5, 2002
6350686 Organometallic compound mixtures in chemical vapor deposition Feb. 26, 2002
6350644 Ferroelectric thin-film device and method for producing the same Feb. 26, 2002
6348412 Organometallic compound mixtures in chemical vapor deposition Feb. 19, 2002
6346478 Method of forming a copper wiring in a semiconductor device Feb. 12, 2002
6344412 Integrated ESD protection method and system Feb. 5, 2002

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