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Class Information
Number: 438/681
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Utilizing chemical vapor deposition (i.e., cvd) > Of organo-metallic precursor (i.e., mocvd)
Description: Processes where the chemical vapor deposition process utilizes an organo-metallic compound.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
7105444 Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same Sep. 12, 2006
7105442 Ashable layers for reducing critical dimensions of integrated circuit features Sep. 12, 2006
7098131 Methods for forming atomic layers and thin films including tantalum nitride and devices including the same Aug. 29, 2006
7094690 Deposition methods and apparatuses providing surface activation Aug. 22, 2006
7087526 Method of fabricating a p-type CaO-doped SrCu.sub.2O.sub.2 thin film Aug. 8, 2006
7087481 Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands Aug. 8, 2006
7081409 Methods of producing integrated circuit devices utilizing tantalum amine derivatives Jul. 25, 2006
7078341 Method of depositing metal layers from metal-carbonyl precursors Jul. 18, 2006
7074690 Selective gap-fill process Jul. 11, 2006
7071121 Patterned ceramic films and method for producing the same Jul. 4, 2006
7067438 Atomic layer deposition method of forming an oxide comprising layer on a substrate Jun. 27, 2006
7067405 Atmospheric glow discharge with concurrent coating deposition Jun. 27, 2006
7064060 Method for manufacturing semiconductor device Jun. 20, 2006
7064224 Organometallic complexes and their use as precursors to deposit metal films Jun. 20, 2006
7060615 Methods of forming roughened layers of platinum Jun. 13, 2006
7045457 Film forming material, film forming method, and silicide film May. 16, 2006
7041609 Systems and methods for forming metal oxides using alcohols May. 9, 2006
7037834 Constant emissivity deposition member May. 2, 2006
7033938 Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region Apr. 25, 2006
7030042 Systems and methods for forming tantalum oxide layers and tantalum precursor compounds Apr. 18, 2006
7026169 Method of forming PZT ferroelectric film Apr. 11, 2006
7022298 Exhaust apparatus for process apparatus and method of removing impurity gas Apr. 4, 2006
7019402 Silicon chip carrier with through-vias using laser assisted chemical vapor deposition of conductor Mar. 28, 2006
7018932 Method for manufacturing a semiconductor device and apparatus for manufacturing a semiconductor device Mar. 28, 2006
6998331 Methods for fabricating three dimensional anisotropic thin films and products produced thereby Feb. 14, 2006
6987063 Method to reduce impurity elements during semiconductor film deposition Jan. 17, 2006
6984584 Contamination suppression in chemical fluid deposition Jan. 10, 2006
6984591 Precursor source mixtures Jan. 10, 2006
6982341 Volatile copper aminoalkoxide complex and deposition of copper thin film using same Jan. 3, 2006
6977225 Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants Dec. 20, 2005
6972239 Low temperature MOCVD processes for fabrication of Pr.sub.X Ca.sub.1-x MnO.sub.3 thin films Dec. 6, 2005
6962877 Methods of preventing oxidation of barrier metal of semiconductor devices Nov. 8, 2005
6955985 Domain epitaxy for thin film growth Oct. 18, 2005
6956127 Alkyl group VA metal compounds Oct. 18, 2005
6953743 Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer Oct. 11, 2005
6946393 Small grain size, conformal aluminum interconnects and method for their formation Sep. 20, 2005
6936535 Copper interconnect structure having stuffed diffusion barrier Aug. 30, 2005
6930039 Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug Aug. 16, 2005
6924223 Method of forming a metal layer using an intermittent precursor gas flow process Aug. 2, 2005
6924195 Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions Aug. 2, 2005
6921728 Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds Jul. 26, 2005
6921710 Technique for high efficiency metalorganic chemical vapor deposition Jul. 26, 2005
6921673 Nitride semiconductor device and method of manufacturing the same Jul. 26, 2005
6904675 Method of forming electrical interconnects having electromigration-inhibiting plugs Jun. 14, 2005
6903010 Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer Jun. 7, 2005
6900127 Multilayer integrated circuit copper plateable barriers May. 31, 2005
6900130 Method for locally heating a region in a semiconductor substrate May. 31, 2005
6893965 Method of producing semiconductor device May. 17, 2005
6884719 Method for depositing a coating having a relatively high dielectric constant onto a substrate Apr. 26, 2005
6881667 Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer Apr. 19, 2005

1 2 3 4 5 6 7 8 9 10 11

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