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Class Information
Number: 438/681
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Utilizing chemical vapor deposition (i.e., cvd) > Of organo-metallic precursor (i.e., mocvd)
Description: Processes where the chemical vapor deposition process utilizes an organo-metallic compound.










Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
5110760 Method of nanometer lithography May. 5, 1992
5089438 Method of making an article comprising a TiN.sub.x layer Feb. 18, 1992
5015747 Organometallic compounds May. 14, 1991
5008217 Process for fabricating integrated circuits having shallow junctions Apr. 16, 1991
4880492 Organometallic compounds Nov. 14, 1989
4876112 Process for forming metallic patterned film Oct. 24, 1989
4814294 Method of growing cobalt silicide films by chemical vapor deposition Mar. 21, 1989
4726961 Process for low pressure chemical vapor deposition of refractory metal Feb. 23, 1988
4619840 Process and apparatus for low pressure chemical vapor deposition of refractory metal Oct. 28, 1986
4605566 Method for forming thin films by absorption Aug. 12, 1986
4460618 Aluminum deposition on semiconductor bodies Jul. 17, 1984
4451503 Photo deposition of metals with far UV radiation May. 29, 1984
4433012 Process for the pyrolytic deposition of aluminum from TIBA Feb. 21, 1984
4332879 Process for depositing a film of controlled composition using a metallo-organic photoresist Jun. 1, 1982
4328261 Metallizing semiconductor devices May. 4, 1982
4310567 Method for chemical vapor deposition Jan. 12, 1982

1 2 3 4 5 6 7 8 9 10 11










 
 
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