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Class Information
Number: 438/680
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Utilizing chemical vapor deposition (i.e., cvd)
Description: Processes wherein the conductive material is deposited utilizing a vapor phase precursor which decomposes or reacts either in the gaseous phase or on a substrate.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615500 |
Method for depositing film and method for manufacturing semiconductor device |
Nov. 10, 2009 |
| 7615501 |
Method for making a thin film layer |
Nov. 10, 2009 |
| 7615492 |
Preparing method of CNT-based semiconductor sensitized solar cell |
Nov. 10, 2009 |
| 7611989 |
Polysilicon dummy wafers and process used therewith |
Nov. 3, 2009 |
| 7611990 |
Deposition methods for barrier and tungsten materials |
Nov. 3, 2009 |
| 7608542 |
Large-size glass substrate for photomask and making method, computer-readable recording medium, and mother glass exposure method |
Oct. 27, 2009 |
| 7605083 |
Formation of composite tungsten films |
Oct. 20, 2009 |
| 7601601 |
Method for manufacturing semiconductor device |
Oct. 13, 2009 |
| 7592256 |
Method of forming tungsten film |
Sep. 22, 2009 |
| 7589017 |
Methods for growing low-resistivity tungsten film |
Sep. 15, 2009 |
| 7585769 |
Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE |
Sep. 8, 2009 |
| 7582562 |
Atomic layer deposition methods |
Sep. 1, 2009 |
| 7576005 |
Dense seed layer and method of formation |
Aug. 18, 2009 |
| 7576006 |
Protective self-aligned buffer layers for damascene interconnects |
Aug. 18, 2009 |
| 7576012 |
Atomic layer deposition methods |
Aug. 18, 2009 |
| 7576016 |
Process for manufacturing semiconductor device |
Aug. 18, 2009 |
| 7569487 |
Method for atomic layer deposition of materials using a pre-treatment for semiconductor devices |
Aug. 4, 2009 |
| 7563715 |
Method of producing thin films |
Jul. 21, 2009 |
| 7563718 |
Method for forming tungsten layer of semiconductor device and method for forming tungsten wiring layer using the same |
Jul. 21, 2009 |
| 7560393 |
Systems and methods of forming refractory metal nitride layers using disilazanes |
Jul. 14, 2009 |
| 7560386 |
Method of manufacturing nonvolatile semiconductor memory device |
Jul. 14, 2009 |
| 7560383 |
Method of forming a thin layer and method of manufacturing a non-volatile semiconductor device using the same |
Jul. 14, 2009 |
| 7553677 |
Method for manufacturing ferroelectric memory |
Jun. 30, 2009 |
| 7547631 |
Organometallic compounds |
Jun. 16, 2009 |
| 7544615 |
Systems and methods of forming refractory metal nitride layers using organic amines |
Jun. 9, 2009 |
| 7541283 |
Plasma processing method and plasma processing apparatus |
Jun. 2, 2009 |
| 7531458 |
Organometallic compounds |
May. 12, 2009 |
| 7531452 |
Strained metal silicon nitride films and method of forming |
May. 12, 2009 |
| 7531457 |
Method of fabricating suspended structure |
May. 12, 2009 |
| 7531398 |
Methods and devices employing metal layers in gates to introduce channel strain |
May. 12, 2009 |
| 7524761 |
Method for manufacturing semiconductor device capable of reducing parasitic bit line capacitance |
Apr. 28, 2009 |
| 7521368 |
Method for manufacturing semiconductor device |
Apr. 21, 2009 |
| 7514366 |
Methods for forming shallow trench isolation |
Apr. 7, 2009 |
| 7504332 |
Water-barrier performance of an encapsulating film |
Mar. 17, 2009 |
| 7501344 |
Formation of boride barrier layers using chemisorption techniques |
Mar. 10, 2009 |
| 7501343 |
Formation of boride barrier layers using chemisorption techniques |
Mar. 10, 2009 |
| 7494943 |
Method for using film formation apparatus |
Feb. 24, 2009 |
| 7488677 |
Interconnect structures with encasing cap and methods of making thereof |
Feb. 10, 2009 |
| 7488683 |
Chemical vapor deposited film based on a plasma CVD method and method of forming the film |
Feb. 10, 2009 |
| 7485340 |
Production of elemental films using a boron-containing reducing agent |
Feb. 3, 2009 |
| 7476605 |
Method of manufacturing semiconductor device |
Jan. 13, 2009 |
| 7476602 |
N.sub.2 based plasma treatment for enhanced sidewall smoothing and pore sealing porous low-k dielectric films |
Jan. 13, 2009 |
| 7473649 |
Methods for controlling feature dimensions in crystalline substrates |
Jan. 6, 2009 |
| 7473638 |
Plasma-enhanced cyclic layer deposition process for barrier layers |
Jan. 6, 2009 |
| 7470633 |
Method of forming a carbon polymer film using plasma CVD |
Dec. 30, 2008 |
| 7468321 |
Application of impressed-current cathodic protection to prevent metal corrosion and oxidation |
Dec. 23, 2008 |
| 7465663 |
Semiconductor device fabrication method |
Dec. 16, 2008 |
| 7465669 |
Method of fabricating a silicon nitride stack |
Dec. 16, 2008 |
| 7462525 |
Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain |
Dec. 9, 2008 |
| 7462559 |
Systems and methods for forming metal-containing layers using vapor deposition processes |
Dec. 9, 2008 |
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