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Class Information
Number: 438/672
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > And patterning of conductive layer > Plug formation (i.e., in viahole)
Description: Processes wherein the patterning step results in the remaining conductive material being recessed below the top surface of the substrate.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6495200 Method to deposit a seeding layer for electroless copper plating Dec. 17, 2002
6495448 Dual damascene process Dec. 17, 2002
6492260 Method of fabricating damascene metal wiring Dec. 10, 2002
6492268 Method of forming a copper wiring in a semiconductor device Dec. 10, 2002
6489201 Method for manufacturing a semiconductor device Dec. 3, 2002
6489233 Non-metallic barrier formations for copper damascene type interconnects Dec. 3, 2002
6486033 SAC method for embedded DRAM devices Nov. 26, 2002
6486056 Process for making integrated circuit structure with thin dielectric between at least local interconnect level and first metal interconnect level Nov. 26, 2002
6486058 Method of forming a photoresist pattern using WASOOM Nov. 26, 2002
6479340 Device and method for protecting against oxidation of a conductive layer in said device Nov. 12, 2002
6479375 Method of forming a semiconductor device having a non-peeling electrode pad portion Nov. 12, 2002
6479377 Method for making semiconductor devices having contact plugs and local interconnects Nov. 12, 2002
6475898 Method of forming interconnectings in semiconductor devices Nov. 5, 2002
6472261 Method of forming an integrated circuit contact structure having gate electrode protection for self-aligned contacts with zero enclosure Oct. 29, 2002
6472315 Method of via patterning utilizing hard mask and stripping patterning material at low temperature Oct. 29, 2002
6472322 Method of forming a metal to polysilicon contact in oxygen environment Oct. 29, 2002
6465350 Aluminum nitride thin film formation on integrated circuits Oct. 15, 2002
6461959 Method of fabrication of a contact plug in an embedded memory Oct. 8, 2002
6458634 Reduction of induced charge in SOI devices during focused ion beam processing Oct. 1, 2002
6458685 Method of forming a self-aligned contact opening Oct. 1, 2002
6458690 Method for manufacturing a multilayer interconnection structure Oct. 1, 2002
6458692 Method of forming contact plug of semiconductor device Oct. 1, 2002
6458697 Semiconductor device and manufacturing method therefor Oct. 1, 2002
6458703 Method for manufacturing semiconductor devices with allevration of thermal stress generation in conductive coating Oct. 1, 2002
6458707 Tool for semiconductor manufacturing apparatus and method for using the same Oct. 1, 2002
6459160 Package with low stress hermetic seal Oct. 1, 2002
6455412 Semiconductor contact via structure and method Sep. 24, 2002
6455424 Selective cap layers over recessed polysilicon plugs Sep. 24, 2002
6455427 Method for forming void-free metallization in an integrated circuit Sep. 24, 2002
6451649 Method for fabricating semiconductor device having a capacitor Sep. 17, 2002
6448179 Method for fabricating semiconductor device Sep. 10, 2002
6444520 Method of forming dual conductive plugs Sep. 3, 2002
6444567 Process for alloying damascene-type Cu interconnect lines Sep. 3, 2002
6444575 Method for forming a bitline contact via within a memory cell structure Sep. 3, 2002
6440850 Structure for an electrical contact to a thin film in a semiconductor structure and method for making the same Aug. 27, 2002
6440861 Method of forming dual damascene structure Aug. 27, 2002
6436811 Method of forming a copper-containing metal interconnect using a chemical mechanical planarization (CMP) slurry Aug. 20, 2002
6436821 Method for producing a micromechanical structure and a micromechanical structure Aug. 20, 2002
6432810 Method of making dual damascene structure Aug. 13, 2002
6426287 Method for forming a semiconductor connection with a top surface having an enlarged recess Jul. 30, 2002
6423626 Removal of metal cusp for improved contact fill Jul. 23, 2002
6423627 Method for forming memory array and periphery contacts using a same mask Jul. 23, 2002
6420258 Selective growth of copper for advanced metallization Jul. 16, 2002
6417090 Damascene arrangement for metal interconnection using low k dielectric constant materials for etch stop layer Jul. 9, 2002
RE37786 Copper-based metal polishing solution and method for manufacturing semiconductor device Jul. 9, 2002
6412786 Die seal ring Jul. 2, 2002
6413855 Methods of making interconnections for semiconductor circuits Jul. 2, 2002
6410422 Method of forming a local interconnect contact opening Jun. 25, 2002
6410425 Integrated circuit with stop layer and method of manufacturing the same Jun. 25, 2002
6406954 Method for forming out-diffusing a dopant from the doped polysilicon into the N-type and P-type doped portion Jun. 18, 2002

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