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Class Information
Number: 438/664
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Including heat treatment of conductive layer > Rapid thermal anneal > Forming silicide
Description: Processes wherein the rapid thermal anneal results in the formation of a single silicide layer by the reaction of a conductive layer and a silicon substrate region.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8679973 Method of manufacturing semiconductor device Mar. 25, 2014
8679968 Method for forming a self-aligned contact opening by a lateral etch Mar. 25, 2014
8673724 Methods of fabricating semiconductor devices Mar. 18, 2014
8658485 Semiconductor device and method of fabricating the same Feb. 25, 2014
8652912 Methods of fabricating a transistor gate including cobalt silicide Feb. 18, 2014
8617992 Method of forming metal silicide contact and metal interconnect Dec. 31, 2013
8610233 Hybrid MOSFET structure having drain side schottky junction Dec. 17, 2013
8603915 Multi-stage silicidation process Dec. 10, 2013
8592277 Method of forming low resistance gate for power MOSFET applications Nov. 26, 2013
8569170 Manufacturing method of semiconductor device comprising silicide layer with varied thickness Oct. 29, 2013
8541297 Manufacturing method of semiconductor device Sep. 24, 2013
8536010 Method for making a disilicide Sep. 17, 2013
8524564 Full silicidation prevention via dual nickel deposition approach Sep. 3, 2013
8518765 Aqua regia and hydrogen peroxide HCl combination to remove Ni and NiPt residues Aug. 27, 2013
8486783 Semiconductor device and method of manufacturing the same Jul. 16, 2013
8486828 Semiconductor device manufacturing method Jul. 16, 2013
8476154 Method of making a charge trapping non-volatile semiconductor memory device Jul. 2, 2013
8470628 Methods to fabricate silicide micromechanical device Jun. 25, 2013
8470707 Silicide method Jun. 25, 2013
8440523 Micromechanical device and methods to fabricate same using hard mask resistant to structure release etch May. 14, 2013
8440564 Schemes for forming barrier layers for copper in interconnect structures May. 14, 2013
8435889 Methods of forming CoSi.sub.2, methods of forming field effect transistors, and methods of forming conductive contacts May. 7, 2013
8435862 Method of manufacturing semiconductor device May. 7, 2013
8431482 Integrated circuits and methods for processing integrated circuits with embedded features Apr. 30, 2013
8404589 Silicide contact formation Mar. 26, 2013
8377812 SiC MOSFETs and self-aligned fabrication methods thereof Feb. 19, 2013
8377797 Method for bonding of semiconductor component to a substrate Feb. 19, 2013
8372750 Method and system for improved nickel silicide Feb. 12, 2013
8349732 Implanted metal silicide for semiconductor device Jan. 8, 2013
8338292 Body contacts for FET in SOI SRAM array Dec. 25, 2012
8324040 Semiconductor device and method for fabricating the same Dec. 4, 2012
8304319 Method for making a disilicide Nov. 6, 2012
8304342 Sacrificial CMP etch stop layer Nov. 6, 2012
8293643 Method and structure of forming silicide and diffusion barrier layer with direct deposited film on silicon Oct. 23, 2012
8278200 Metal-semiconductor intermixed regions Oct. 2, 2012
8247319 Method to enable the process and enlarge the process window for silicide, germanide or germanosilicide formation in structures with extremely small dimensions Aug. 21, 2012
8232201 Schemes for forming barrier layers for copper in interconnect structures Jul. 31, 2012
8211796 Semiconductor device manufacturing method Jul. 3, 2012
8202799 Methods of manufacturing metal-silicide features Jun. 19, 2012
8193051 Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics Jun. 5, 2012
8178414 NMOS architecture involving epitaxially-grown in-situ N-type-doped embedded eSiGe:C source/drain targeting May. 15, 2012
8168538 Buried silicide structure and method for making May. 1, 2012
8158513 Integrated circuit system employing backside energy source for electrical contact formation Apr. 17, 2012
8158518 Methods of making metal silicide contacts, interconnects, and/or seed layers Apr. 17, 2012
8148262 Method for manufacturing semiconductor device Apr. 3, 2012
8120117 Semiconductor device with metal gate Feb. 21, 2012
8110457 Method of manufacturing semiconductor device Feb. 7, 2012
8110499 Method of forming a contact structure Feb. 7, 2012
8105910 Method for forming silicide of semiconductor device Jan. 31, 2012
8101518 Method and process for forming a self-aligned silicide contact Jan. 24, 2012

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