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Class Information
Number: 438/664
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Including heat treatment of conductive layer > Rapid thermal anneal > Forming silicide
Description: Processes wherein the rapid thermal anneal results in the formation of a single silicide layer by the reaction of a conductive layer and a silicon substrate region.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622387 |
Gate electrode silicidation process |
Nov. 24, 2009 |
| 7605068 |
Semiconductor device having a silicide layer and manufacturing method thereof |
Oct. 20, 2009 |
| 7595264 |
Fabrication method of semiconductor device |
Sep. 29, 2009 |
| 7589009 |
Method for fabricating a top conductive layer in a semiconductor die and related structure |
Sep. 15, 2009 |
| 7589007 |
MESFETs integrated with MOSFETs on common substrate and methods of forming the same |
Sep. 15, 2009 |
| 7572722 |
Method of fabricating nickel silicide |
Aug. 11, 2009 |
| 7572723 |
Micropad for bonding and a method therefor |
Aug. 11, 2009 |
| 7569483 |
Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatus |
Aug. 4, 2009 |
| 7560331 |
Method for forming a silicided gate |
Jul. 14, 2009 |
| 7560379 |
Semiconductive device fabricated using a raised layer to silicide the gate |
Jul. 14, 2009 |
| 7557032 |
Silicided recessed silicon |
Jul. 7, 2009 |
| 7553762 |
Method for forming metal silicide layer |
Jun. 30, 2009 |
| 7550372 |
Method of fabricating conductive lines with silicide layer |
Jun. 23, 2009 |
| 7547607 |
Methods of fabricating integrated circuit capacitors using a dry etching process |
Jun. 16, 2009 |
| 7544616 |
Methods of forming nitride read only memory and word lines thereof |
Jun. 9, 2009 |
| 7544575 |
Dual metal silicide scheme using a dual spacer process |
Jun. 9, 2009 |
| 7531459 |
Methods of forming self-aligned silicide layers using multiple thermal processes |
May. 12, 2009 |
| 7528067 |
MOSFET structure with multiple self-aligned silicide contacts |
May. 5, 2009 |
| 7524751 |
Method for forming contact hole in semiconductor device |
Apr. 28, 2009 |
| 7517795 |
Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation |
Apr. 14, 2009 |
| 7504329 |
Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET |
Mar. 17, 2009 |
| 7501333 |
Work function adjustment on fully silicided (FUSI) gate |
Mar. 10, 2009 |
| 7491635 |
Method for forming a fully silicided gate and devices obtained thereof |
Feb. 17, 2009 |
| 7485558 |
Method of manufacturing semiconductor device |
Feb. 3, 2009 |
| 7456096 |
Method of manufacturing silicide layer for semiconductor device |
Nov. 25, 2008 |
| 7446008 |
Method for fabricating silicide layers for semiconductor device |
Nov. 4, 2008 |
| 7446043 |
Contact structure having silicide layers, semiconductor device employing the same, and methods of fabricating the contact structure and semiconductor device |
Nov. 4, 2008 |
| 7419905 |
Gate electrodes and the formation thereof |
Sep. 2, 2008 |
| 7417290 |
Air break for improved silicide formation with composite caps |
Aug. 26, 2008 |
| 7396764 |
Manufacturing method for forming all regions of the gate electrode silicided |
Jul. 8, 2008 |
| 7390729 |
Method of fabricating a semiconductor device |
Jun. 24, 2008 |
| 7361597 |
Semiconductor device and method of fabricating the same |
Apr. 22, 2008 |
| 7348230 |
Manufacturing method of semiconductor device |
Mar. 25, 2008 |
| 7344984 |
Technique for enhancing stress transfer into channel regions of NMOS and PMOS transistors |
Mar. 18, 2008 |
| 7344983 |
Clustered surface preparation for silicide and metal contacts |
Mar. 18, 2008 |
| 7344978 |
Fabrication method of semiconductor device |
Mar. 18, 2008 |
| 7341933 |
Method for manufacturing a silicided gate electrode using a buffer layer |
Mar. 11, 2008 |
| 7329604 |
Semiconductor device and method for fabricating the same |
Feb. 12, 2008 |
| 7326644 |
Semiconductor device and method of fabricating the same |
Feb. 5, 2008 |
| 7320938 |
Method for reducing dendrite formation in nickel silicon salicide processes |
Jan. 22, 2008 |
| 7307322 |
Ultra-uniform silicide system in integrated circuit technology |
Dec. 11, 2007 |
| 7303990 |
Nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device |
Dec. 4, 2007 |
| 7294570 |
Contact integration method |
Nov. 13, 2007 |
| 7285485 |
Method for forming a gate in a semiconductor, which prevents gate leaning caused by thermal processing |
Oct. 23, 2007 |
| 7285491 |
Salicide process |
Oct. 23, 2007 |
| 7265040 |
Cleaning solution and method for selectively removing layer in a silicidation process |
Sep. 4, 2007 |
| 7238612 |
Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the same |
Jul. 3, 2007 |
| 7238611 |
Salicide process |
Jul. 3, 2007 |
| 7235481 |
Method of manufacturing a semiconductor device having a silicidation blocking layer |
Jun. 26, 2007 |
| 7226859 |
Method of forming different silicide portions on different silicon-containing regions in a semiconductor device |
Jun. 5, 2007 |
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