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Class Information
Number: 438/658
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Altering composition of conductor
Description: Processes wherein the composition of the conductive material which forms an ohmic contact to an adjacent semiconductive region is altered (e.g., via implantation, diffusion, etc.)

Sub-classes under this class:

Class Number Class Name Patents
438/659 Implantation of ion into conductor 350

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8647959 Metal-insulator-metal capacitor alloying process Feb. 11, 2014
8633101 Semiconductor device and manufacturing method of semiconductor device Jan. 21, 2014
8592308 Silicided device with shallow impurity regions at interface between silicide and stressed liner Nov. 26, 2013
8501621 Method of fabrication of the memristive device Aug. 6, 2013
8501600 Methods for depositing germanium-containing layers Aug. 6, 2013
8486759 Method for forming terminal of stacked package element and method for forming stacked package Jul. 16, 2013
8450208 Semiconductor device manufacturing method May. 28, 2013
8450209 p+ Polysilicon material on aluminum for non-volatile memory device and method May. 28, 2013
8373069 Electronic component mounting substrate and method for manufacturing electronic component mounting substrate Feb. 12, 2013
8357607 Method for fabricating nitride-based semiconductor device having electrode on m-plane Jan. 22, 2013
8338291 Producing transistor including multiple reentrant profiles Dec. 25, 2012
8334199 Method for fabricating nitride-based semiconductor device having electrode on m-plane Dec. 18, 2012
8324099 Method of fabricating a landing plug in a semiconductor device Dec. 4, 2012
8318594 Method for fabricating nitride-based semiconductor device having electrode on m-plane Nov. 27, 2012
8313996 Reactive metal implated oxide based memory Nov. 20, 2012
8309993 Pixel of image sensor and method for fabricating the same Nov. 13, 2012
8309448 Method for forming buried word line in semiconductor device Nov. 13, 2012
8236686 Dual metal gates using one metal to alter work function of another metal Aug. 7, 2012
8158512 Atomic layer deposition method and semiconductor device formed by the same Apr. 17, 2012
8124529 Semiconductor device fabricated using a metal microstructure control process Feb. 28, 2012
8119492 Dissolving precipates in alloy material in capacitor structure Feb. 21, 2012
8110501 Method of fabricating landing plug with varied doping concentration in semiconductor device Feb. 7, 2012
8110502 Method of improving adhesion strength of low dielectric constant layers Feb. 7, 2012
8088688 p+ polysilicon material on aluminum for non-volatile memory device and method Jan. 3, 2012
8008177 Method for fabricating semiconductor device using a nickel salicide process Aug. 30, 2011
8003526 Low resistance metal silicide local interconnects and a method of making Aug. 23, 2011
8003511 Memory cell formation using ion implant isolated conductive metal oxide Aug. 23, 2011
7968458 Electronic circuit board and its manufacturing method Jun. 28, 2011
7906777 Semiconductor thin film and method for manufacturing same, and thin film transistor Mar. 15, 2011
7867789 Contact clean by remote plasma and repair of silicide surface Jan. 11, 2011
7863126 Fabrication of a CMOS structure with a high-k dielectric layer oxidizing an aluminum layer in PFET region Jan. 4, 2011
7838441 Deposition and densification process for titanium nitride barrier layers Nov. 23, 2010
7838423 Method of forming capping structures on one or more material layer surfaces Nov. 23, 2010
7799683 Copper interconnect wiring and method and apparatus for forming thereof Sep. 21, 2010
7781318 Semiconductor device and method of manufacturing the same Aug. 24, 2010
7713869 Manufacture method for semiconductor device suitable for forming wirings by damascene method and semiconductor device May. 11, 2010
7695981 Seed layers, cap layers, and thin films and methods of making thereof Apr. 13, 2010
7696092 Method of using ternary copper alloy to obtain a low resistance and large grain size interconnect Apr. 13, 2010
7670944 Conformal lining layers for damascene metallization Mar. 2, 2010
7670941 Method for production of semiconductor devices Mar. 2, 2010
7651943 Forming diffusion barriers by annealing copper alloy layers Jan. 26, 2010
7645699 Method of forming a diffusion barrier layer using a TaSiN layer and method of forming a metal interconnection line using the same Jan. 12, 2010
7638432 Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same Dec. 29, 2009
7628896 Coated article with transparent conductive oxide film doped to adjust Fermi level, and method of making same Dec. 8, 2009
7594937 Porous anode body for solid electrolytic capacitor, production method thereof and solid electrolytic capacitor Sep. 29, 2009
7569467 Semiconductor device and manufacturing method thereof Aug. 4, 2009
7569482 Method for the selective removal of an unsilicided metal Aug. 4, 2009
7544610 Method and process for forming a self-aligned silicide contact Jun. 9, 2009
7494859 Semiconductor device having metal gate patterns and related method of manufacture Feb. 24, 2009
7479394 MgO/NiFe MTJ for high performance MRAM application Jan. 20, 2009

1 2 3 4 5 6 7

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