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Class Information
Number: 438/650
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Contacting multiple semiconductive regions (i.e., interconnects) > Diverse conductors > Having noble group metal (i.e., silver (ag), gold (au), platinum (pt), palladium (pd), rhodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof)
Description: Processes for forming at least one of the conductive layers using one of the noble group elements (e.g., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof).










Sub-classes under this class:

Class Number Class Name Patents
438/651 Silicide 189


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8673766 Methods of forming copper-based conductive structures by forming a copper-based seed layer having an as-deposited thickness profile and thereafter performing an etching process and electroless Mar. 18, 2014
8647976 Semiconductor package having test pads on top and bottom substrate surfaces and method of testing same Feb. 11, 2014
8618677 Wirebonded semiconductor package Dec. 31, 2013
8592820 Layers and patterns of nanowire or carbon nanotube using chemical self assembly and fabricating method in liquid crystal display device thereby Nov. 26, 2013
8586485 Molecular self-assembly in substrate processing Nov. 19, 2013
8421230 Microelectronic device provided with an array of elements made from a conductive polymer with a positive temperature coefficient Apr. 16, 2013
8390018 Nitride-based compound semiconductor light emitting device and method of fabricating the same Mar. 5, 2013
8372744 Fabricating a contact rhodium structure by electroplating and electroplating composition Feb. 12, 2013
8367428 Semiconductor device and manufacturing method thereof Feb. 5, 2013
8349730 Transitional interface between metal and dielectric in interconnect structures Jan. 8, 2013
8338950 Electronic component Dec. 25, 2012
8309395 Method of fabricating a high-temperature compatible power semiconductor module Nov. 13, 2012
8288274 Method of forming noble metal layer using ozone reaction gas Oct. 16, 2012
8278199 Method of manufacturing a semiconductor device Oct. 2, 2012
8227335 Forming a copper diffusion barrier Jul. 24, 2012
8227782 Resistance change element and method of manufacturing the same Jul. 24, 2012
8198730 Semiconductor device and method of manufacturing the same Jun. 12, 2012
8178439 Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices May. 15, 2012
8174121 Semiconductor device and manufacturing method thereof May. 8, 2012
8133812 Methods and systems for barrier layer surface passivation Mar. 13, 2012
8119518 Noble metal barrier for fluorine-doped carbon films Feb. 21, 2012
8114770 Pre-treatment method to increase copper island density of CU on barrier layers Feb. 14, 2012
8110411 Semiconductor device and manufacturing method thereof Feb. 7, 2012
8084348 Contact pads for silicon chip packages Dec. 27, 2011
8062950 Method of manufacturing semiconductor device with lower capacitor electrode that includes islands of conductive oxide films arranged on a noble metal film Nov. 22, 2011
8058164 Methods of fabricating electronic devices using direct copper plating Nov. 15, 2011
8039378 Method of manufacturing a semiconductor device Oct. 18, 2011
8008193 Manufacturing method of semiconductor device and semiconductor manufacturing apparatus therefor Aug. 30, 2011
7998864 Noble metal cap for interconnect structures Aug. 16, 2011
7977235 Method for manufacturing a semiconductor device with metal-containing cap layers Jul. 12, 2011
7956469 Light emitting device and method of manufacturing the same Jun. 7, 2011
7943506 Semiconductor device and production method therefor May. 17, 2011
7884012 Void-free copper filling of recessed features for semiconductor devices Feb. 8, 2011
7875525 Method of manufacturing stack-type capacitor and semiconductor memory device having the stack-type capacitor Jan. 25, 2011
7855141 Semiconductor device having multiple wiring layers and method of producing the same Dec. 21, 2010
7851360 Organometallic precursors for seed/barrier processes and methods thereof Dec. 14, 2010
7829427 Method of fabricating a high Q factor integrated circuit inductor Nov. 9, 2010
7830010 Surface treatment for selective metal cap applications Nov. 9, 2010
7816202 Method for fabricating capacitor in semiconductor device Oct. 19, 2010
7799674 Ruthenium alloy film for copper interconnects Sep. 21, 2010
7759187 Metal plating using seed film Jul. 20, 2010
7737028 Selective ruthenium deposition on copper materials Jun. 15, 2010
7736984 Method of forming a low resistance semiconductor contact and structure therefor Jun. 15, 2010
7704879 Method of forming low-resistivity recessed features in copper metallization Apr. 27, 2010
7701062 Semiconductor device and method for producing the same Apr. 20, 2010
7666781 Interconnect structures with improved electromigration resistance and methods for forming such interconnect structures Feb. 23, 2010
7662713 Semiconductor device production method that includes forming a gold interconnection layer Feb. 16, 2010
7656045 Cap layer for an aluminum copper bond pad Feb. 2, 2010
7638428 Semiconductor structure and method of forming the same Dec. 29, 2009
7638406 Method of fabricating a high Q factor integrated circuit inductor Dec. 29, 2009

1 2 3 4 5










 
 
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