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Class Information
Number: 438/649
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Contacting multiple semiconductive regions (i.e., interconnects) > Diverse conductors > Having refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof) > Silicide
Description: Processes for forming a conductive layer using the chemical combination of silicon (Si) with one of the refractory group elements (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622386 |
Method for improved formation of nickel silicide contacts in semiconductor devices |
Nov. 24, 2009 |
| 7618855 |
Manufacturing method of semiconductor device |
Nov. 17, 2009 |
| 7605077 |
Dual metal integration scheme based on full silicidation of the gate electrode |
Oct. 20, 2009 |
| 7601635 |
Method of manufacturing a semiconductor device |
Oct. 13, 2009 |
| 7595233 |
Gate stress engineering for MOSFET |
Sep. 29, 2009 |
| 7550372 |
Method of fabricating conductive lines with silicide layer |
Jun. 23, 2009 |
| 7547607 |
Methods of fabricating integrated circuit capacitors using a dry etching process |
Jun. 16, 2009 |
| 7544616 |
Methods of forming nitride read only memory and word lines thereof |
Jun. 9, 2009 |
| 7544597 |
Method of forming a semiconductor device including an ohmic layer |
Jun. 9, 2009 |
| 7528070 |
Sputtering apparatus and method for forming metal silicide layer using the same |
May. 5, 2009 |
| 7504329 |
Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET |
Mar. 17, 2009 |
| 7501333 |
Work function adjustment on fully silicided (FUSI) gate |
Mar. 10, 2009 |
| 7498179 |
Semiconductor device having ferroelectric material capacitor and method of making the same |
Mar. 3, 2009 |
| 7465634 |
Method of forming integrated circuit devices having n-MOSFET and p-MOSFET transistors with elevated and silicided source/drain structures |
Dec. 16, 2008 |
| 7456095 |
Method and apparatus for forming nickel silicide with low defect density in FET devices |
Nov. 25, 2008 |
| 7432184 |
Integrated PVD system using designated PVD chambers |
Oct. 7, 2008 |
| 7425482 |
Non-volatile memory device and method for fabricating the same |
Sep. 16, 2008 |
| 7407882 |
Semiconductor component having a contact structure and method of manufacture |
Aug. 5, 2008 |
| 7405112 |
Low contact resistance CMOS circuits and methods for their fabrication |
Jul. 29, 2008 |
| 7399701 |
Semiconductor device manufacturing method including forming a metal silicide layer on an indium-containing layer |
Jul. 15, 2008 |
| 7396764 |
Manufacturing method for forming all regions of the gate electrode silicided |
Jul. 8, 2008 |
| 7396724 |
Dual-hybrid liner formation without exposing silicide layer to photoresist stripping chemicals |
Jul. 8, 2008 |
| 7371333 |
Methods of etching nickel silicide and cobalt silicide and methods of forming conductive lines |
May. 13, 2008 |
| 7361597 |
Semiconductor device and method of fabricating the same |
Apr. 22, 2008 |
| 7358188 |
Method of forming conductive metal silicides by reaction of metal with silicon |
Apr. 15, 2008 |
| 7354838 |
Technique for forming a contact insulation layer with enhanced stress transfer efficiency |
Apr. 8, 2008 |
| 7344984 |
Technique for enhancing stress transfer into channel regions of NMOS and PMOS transistors |
Mar. 18, 2008 |
| 7344985 |
Nickel alloy silicide including indium and a method of manufacture therefor |
Mar. 18, 2008 |
| 7342286 |
Electrical node of transistor and method of forming the same |
Mar. 11, 2008 |
| 7338888 |
Method for manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same |
Mar. 4, 2008 |
| 7329604 |
Semiconductor device and method for fabricating the same |
Feb. 12, 2008 |
| 7312163 |
Atomic layer deposition methods, and methods of forming materials over semiconductor substrates |
Dec. 25, 2007 |
| 7312140 |
Film forming method |
Dec. 25, 2007 |
| 7307017 |
Semiconductor devices and fabrication methods thereof |
Dec. 11, 2007 |
| 7307871 |
SRAM cell design with high resistor CMOS gate structure for soft error rate improvement |
Dec. 11, 2007 |
| 7291555 |
Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon |
Nov. 6, 2007 |
| 7285491 |
Salicide process |
Oct. 23, 2007 |
| 7256137 |
Method of forming contact plug on silicide structure |
Aug. 14, 2007 |
| 7256125 |
Method of manufacturing a semiconductor device |
Aug. 14, 2007 |
| 7253053 |
Methods of forming transistor devices and capacitor constructions |
Aug. 7, 2007 |
| 7253110 |
Method and apparatus for forming a barrier metal layer in semiconductor devices |
Aug. 7, 2007 |
| 7238612 |
Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the same |
Jul. 3, 2007 |
| 7238611 |
Salicide process |
Jul. 3, 2007 |
| 7232731 |
Method for fabricating transistor of semiconductor device |
Jun. 19, 2007 |
| 7229921 |
Semiconductor device and manufacturing method for the same |
Jun. 12, 2007 |
| 7229911 |
Adhesion improvement for low k dielectrics to conductive materials |
Jun. 12, 2007 |
| 7223662 |
Method of forming an epitaxial layer for raised drain and source regions by removing surface defects of the initial crystal surface |
May. 29, 2007 |
| 7220623 |
Method for manufacturing silicide and semiconductor with the silicide |
May. 22, 2007 |
| 7217647 |
Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern |
May. 15, 2007 |
| 7214620 |
Methods of forming silicide films with metal films in semiconductor devices and contacts including the same |
May. 8, 2007 |
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