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Class Information
Number: 438/648
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Contacting multiple semiconductive regions (i.e., interconnects) > Diverse conductors > Having refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)
Description: Processes for forming at least one layer of the diverse conductive layers using a refractory metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof).
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7618855 |
Manufacturing method of semiconductor device |
Nov. 17, 2009 |
| 7601637 |
Atomic layer deposited tantalum containing adhesion layer |
Oct. 13, 2009 |
| 7598170 |
Plasma-enhanced ALD of tantalum nitride films |
Oct. 6, 2009 |
| 7589017 |
Methods for growing low-resistivity tungsten film |
Sep. 15, 2009 |
| 7585762 |
Vapor deposition processes for tantalum carbide nitride materials |
Sep. 8, 2009 |
| 7581314 |
Method of forming noble metal contacts |
Sep. 1, 2009 |
| 7575998 |
Semiconductor device and metal line fabrication method of the same |
Aug. 18, 2009 |
| 7566653 |
Interconnect structure with grain growth promotion layer and method for forming the same |
Jul. 28, 2009 |
| 7560393 |
Systems and methods of forming refractory metal nitride layers using disilazanes |
Jul. 14, 2009 |
| 7550385 |
Amine-free deposition of metal-nitride films |
Jun. 23, 2009 |
| 7538045 |
Coating process to enable electrophoretic deposition |
May. 26, 2009 |
| 7531902 |
Multi-layered metal line of semiconductor device having excellent diffusion barrier and method for forming the same |
May. 12, 2009 |
| 7528066 |
Structure and method for metal integration |
May. 5, 2009 |
| 7524756 |
Process of forming a semiconductor assembly having a contact structure and contact liner |
Apr. 28, 2009 |
| 7521346 |
Method of forming HfSiN metal for n-FET applications |
Apr. 21, 2009 |
| 7514360 |
Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof |
Apr. 7, 2009 |
| 7514354 |
Methods for forming damascene wiring structures having line and plug conductors formed from different materials |
Apr. 7, 2009 |
| 7510967 |
Method for manufacturing semiconductor device |
Mar. 31, 2009 |
| 7510966 |
Electrically conductive line, method of forming an electrically conductive line, and method of reducing titanium silicide agglomeration in fabrication of titanium silicide over polysilicon tra |
Mar. 31, 2009 |
| 7498179 |
Semiconductor device having ferroelectric material capacitor and method of making the same |
Mar. 3, 2009 |
| 7491641 |
Method of forming a conductive line and a method of forming a conductive contact adjacent to and insulated from a conductive line |
Feb. 17, 2009 |
| 7473633 |
Method for making integrated circuit chip having carbon nanotube composite interconnection vias |
Jan. 6, 2009 |
| 7473636 |
Method to improve time dependent dielectric breakdown |
Jan. 6, 2009 |
| 7462559 |
Systems and methods for forming metal-containing layers using vapor deposition processes |
Dec. 9, 2008 |
| 7452811 |
Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same |
Nov. 18, 2008 |
| 7446056 |
Method for increasing polysilicon grain size |
Nov. 4, 2008 |
| 7435679 |
Alloyed underlayer for microelectronic interconnects |
Oct. 14, 2008 |
| 7435670 |
Bit line barrier metal layer for semiconductor device and process for preparing the same |
Oct. 14, 2008 |
| 7435673 |
Methods of forming integrated circuit devices having metal interconnect structures therein |
Oct. 14, 2008 |
| 7425503 |
Apparatus and method for enhanced thermal conductivity packages for high powered semiconductor devices |
Sep. 16, 2008 |
| 7416974 |
Method of manufacturing semiconductor device, and semiconductor device |
Aug. 26, 2008 |
| 7416980 |
Forming a barrier layer in interconnect joints and structures formed thereby |
Aug. 26, 2008 |
| 7407876 |
Method of plasma enhanced atomic layer deposition of TaC and TaCN films having good adhesion to copper |
Aug. 5, 2008 |
| 7407888 |
Semiconductor device and a fabrication process thereof |
Aug. 5, 2008 |
| 7405143 |
Method for fabricating a seed layer |
Jul. 29, 2008 |
| 7371667 |
Semiconductor device and method of fabricating same |
May. 13, 2008 |
| 7371679 |
Semiconductor device with a metal line and method of forming the same |
May. 13, 2008 |
| 7371680 |
Method of manufacturing semiconductor device |
May. 13, 2008 |
| 7358170 |
Methods of forming conductive interconnects, and methods of depositing nickel |
Apr. 15, 2008 |
| 7354853 |
Selective dry etching of tantalum and tantalum nitride |
Apr. 8, 2008 |
| 7344974 |
Metallization method of semiconductor device |
Mar. 18, 2008 |
| 7316783 |
Method of wiring formation and method for manufacturing electronic components |
Jan. 8, 2008 |
| 7312127 |
Incorporating dopants to enhance the dielectric properties of metal silicates |
Dec. 25, 2007 |
| 7307018 |
Method of fabricating conductive lines |
Dec. 11, 2007 |
| 7303988 |
Methods of manufacturing multi-level metal lines in semiconductor devices |
Dec. 4, 2007 |
| 7300869 |
Integrated barrier and seed layer for copper interconnect technology |
Nov. 27, 2007 |
| 7300870 |
Systems and methods of forming refractory metal nitride layers using organic amines |
Nov. 27, 2007 |
| 7300873 |
Systems and methods for forming metal-containing layers using vapor deposition processes |
Nov. 27, 2007 |
| 7300887 |
Methods of forming metal nitride layers, and methods of forming semiconductor structures having metal nitride layers |
Nov. 27, 2007 |
| 7297623 |
Etch stop layer in poly-metal structures |
Nov. 20, 2007 |
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