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Class Information
Number: 438/648
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Contacting multiple semiconductive regions (i.e., interconnects) > Diverse conductors > Having refractory group metal (i.e., titanium (ti), zirconium (zr), hafnium (hf), vanadium (v), niobium (nb), tantalum (ta), chromium (cr), molybdenum (mo), tungsten (w), or alloy thereof)
Description: Processes for forming at least one layer of the diverse conductive layers using a refractory metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof).










Sub-classes under this class:

Class Number Class Name Patents
438/649 Silicide 588


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Patent Number Title Of Patent Date Issued
8691691 TSV pillar as an interconnecting structure Apr. 8, 2014
8685851 MOS device with memory function and manufacturing method thereof Apr. 1, 2014
8652904 Semiconductor device with gate trench Feb. 18, 2014
8642468 NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors Feb. 4, 2014
8633101 Semiconductor device and manufacturing method of semiconductor device Jan. 21, 2014
8624397 Electrode layer structure for a thin-film transistor and process for manufacture thereof Jan. 7, 2014
8623759 Method for manufacturing semiconductor device Jan. 7, 2014
8617985 High temperature tungsten metallization process Dec. 31, 2013
8617984 Tungsten metallization: structure and fabrication of same Dec. 31, 2013
8603881 Raised trench metal semiconductor alloy formation Dec. 10, 2013
8586485 Molecular self-assembly in substrate processing Nov. 19, 2013
8581413 Semiconductor device and method for manufacturing the same Nov. 12, 2013
8564132 Tungsten metallization: structure and fabrication of same Oct. 22, 2013
8513123 Method of manufacturing solid electrolytic capacitor Aug. 20, 2013
8475872 Patterning of thin film layers Jul. 2, 2013
8470707 Silicide method Jun. 25, 2013
8435886 Method and system for binding halide-based contaminants May. 7, 2013
8431472 Semiconductor device fabrication using gate substitution Apr. 30, 2013
8409985 Methods for growing low-resistivity tungsten for high aspect ratio and small features Apr. 2, 2013
8395266 Semiconductor memory device Mar. 12, 2013
8372746 Electrode of semiconductor device and method for fabricating capacitor Feb. 12, 2013
8367546 Methods for forming all tungsten contacts and lines Feb. 5, 2013
8357611 Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof Jan. 22, 2013
8334206 Method for producing metallic interconnect lines Dec. 18, 2012
8319341 Semiconductor device with gate structure Nov. 27, 2012
8314021 Method for fabricating semiconductor device with buried gates Nov. 20, 2012
8304319 Method for making a disilicide Nov. 6, 2012
8288273 Method for forming a patterned thick metallization atop a power semiconductor chip Oct. 16, 2012
8278199 Method of manufacturing a semiconductor device Oct. 2, 2012
8278218 Electrical conductor line having a multilayer diffusion barrier for use in a semiconductor device and method for forming the same Oct. 2, 2012
8273655 Semiconductor device and method of manufacturing the same Sep. 25, 2012
8242017 Method and structure for copper gap fill plating of interconnect structures for semiconductor integrated circuits Aug. 14, 2012
8236682 Method of forming contact structure Aug. 7, 2012
8227340 Method for producing a copper connection between two sides of a substrate Jul. 24, 2012
8227708 Via structure integrated in electronic substrate Jul. 24, 2012
8227333 Ni plating of a BLM edge for Pb-free C4 undercut control Jul. 24, 2012
8216377 Method and system for binding halide-based contaminants Jul. 10, 2012
8207062 Method for improving adhesion of low resistivity tungsten/tungsten nitride layers Jun. 26, 2012
8198730 Semiconductor device and method of manufacturing the same Jun. 12, 2012
8178446 Strained metal nitride films and method of forming May. 15, 2012
8164194 Data line structure in lead region Apr. 24, 2012
8153487 Semiconductor device and method for manufacturing the same Apr. 10, 2012
8153520 Thinning tungsten layer after through silicon via filling Apr. 10, 2012
8138056 Thermally insulated phase change material memory cells with pillar structure Mar. 20, 2012
8097517 Method for manufacturing semiconductor device with improved short channel effect of a PMOS and stabilized current of a NMOS Jan. 17, 2012
8089128 Transistor gate forming methods and integrated circuits Jan. 3, 2012
8076239 Semiconductor device and method of manufacturing the same Dec. 13, 2011
8056500 Thermal reactor with improved gas flow distribution Nov. 15, 2011
8053365 Methods for forming all tungsten contacts and lines Nov. 8, 2011
8053355 Methods and systems for low interfacial oxide contact between barrier and copper metallization Nov. 8, 2011

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19










 
 
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