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Class Information
Number: 438/643
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Contacting multiple semiconductive regions (i.e., interconnects) > Diverse conductors > At least one layer forms a diffusion barrier
Description: Processes wherein at least one of the diverse conductive layers forms a barrier to the diffusional migration of a contact material into the semiconductor or into another contact layer.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| RE40983 |
Method to plate C4 to copper stud |
Nov. 17, 2009 |
| 7619310 |
Semiconductor interconnect and method of making same |
Nov. 17, 2009 |
| 7605072 |
Interconnect structure with a barrier-redundancy feature |
Oct. 20, 2009 |
| 7601633 |
Semiconductor device and method for fabricating the same |
Oct. 13, 2009 |
| 7601607 |
Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects |
Oct. 13, 2009 |
| 7601624 |
Device comprising an ohmic via contact, and method of fabricating thereof |
Oct. 13, 2009 |
| 7601636 |
Implementation of a metal barrier in an integrated electronic circuit |
Oct. 13, 2009 |
| 7598557 |
Semiconductor device and method for fabricating a semicondutor device including first and second hydrogen diffusion preventing films |
Oct. 6, 2009 |
| 7595269 |
Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer |
Sep. 29, 2009 |
| 7592471 |
Tantalum compound, method for producing same, tantalum-containing thin film and method for forming same |
Sep. 22, 2009 |
| 7592251 |
Hafnium tantalum titanium oxide films |
Sep. 22, 2009 |
| 7585758 |
Interconnect layers without electromigration |
Sep. 8, 2009 |
| 7582557 |
Process for low resistance metal cap |
Sep. 1, 2009 |
| 7579272 |
Methods of forming low-k dielectric layers containing carbon nanostructures |
Aug. 25, 2009 |
| 7575998 |
Semiconductor device and metal line fabrication method of the same |
Aug. 18, 2009 |
| 7566585 |
Semiconductor component and method for production of a semiconductor component |
Jul. 28, 2009 |
| 7566653 |
Interconnect structure with grain growth promotion layer and method for forming the same |
Jul. 28, 2009 |
| 7566654 |
Method for manufacturing a semiconductor device including interconnections having a smaller width |
Jul. 28, 2009 |
| 7563705 |
Manufacturing method of semiconductor device |
Jul. 21, 2009 |
| 7563718 |
Method for forming tungsten layer of semiconductor device and method for forming tungsten wiring layer using the same |
Jul. 21, 2009 |
| 7560393 |
Systems and methods of forming refractory metal nitride layers using disilazanes |
Jul. 14, 2009 |
| 7557033 |
Method of forming metal line of semiconductor memory device |
Jul. 7, 2009 |
| 7544609 |
Method for integrating liner formation in back end of line processing |
Jun. 9, 2009 |
| 7541282 |
Methods of forming metal-nitride layers in contact holes |
Jun. 2, 2009 |
| 7538435 |
Wafer structure and bumping process |
May. 26, 2009 |
| 7534712 |
Semiconductor device and method for fabricating the same |
May. 19, 2009 |
| 7531902 |
Multi-layered metal line of semiconductor device having excellent diffusion barrier and method for forming the same |
May. 12, 2009 |
| 7531901 |
Metal interconnection of semiconductor device and method for forming the same |
May. 12, 2009 |
| 7528066 |
Structure and method for metal integration |
May. 5, 2009 |
| 7524755 |
Entire encapsulation of Cu interconnects using self-aligned CuSiN film |
Apr. 28, 2009 |
| 7517782 |
Method of forming a metal layer over a patterned dielectric by wet chemical deposition including an electroless and a powered phase |
Apr. 14, 2009 |
| 7517793 |
Method of forming metal wire in semiconductor device |
Apr. 14, 2009 |
| 7514358 |
Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
Apr. 7, 2009 |
| 7510959 |
Method of manufacturing a semiconductor device having damascene structures with air gaps |
Mar. 31, 2009 |
| 7510961 |
Utilization of energy absorbing layer to improve metal flow and fill in a novel interconnect structure |
Mar. 31, 2009 |
| 7507659 |
Fabrication process of a semiconductor device |
Mar. 24, 2009 |
| 7507666 |
Manufacture method for semiconductor device having concave portions filled with conductor containing Cu as its main composition |
Mar. 24, 2009 |
| 7504287 |
Methods for fabricating an integrated circuit |
Mar. 17, 2009 |
| 7494921 |
Aluminum metal line of a semiconductor device and method of fabricating the same |
Feb. 24, 2009 |
| 7494916 |
Design structures incorporating interconnect structures with liner repair layers |
Feb. 24, 2009 |
| 7491642 |
Electrical passivation of silicon-containing surfaces using organic layers |
Feb. 17, 2009 |
| 7491643 |
Method and structure for reducing contact resistance between silicide contact and overlying metallization |
Feb. 17, 2009 |
| 7488681 |
Method for fabricating Al metal line |
Feb. 10, 2009 |
| 7485516 |
Method of ion implantation of nitrogen into semiconductor substrate prior to oxidation for offset spacer formation |
Feb. 3, 2009 |
| 7476615 |
Deposition process for iodine-doped ruthenium barrier layers |
Jan. 13, 2009 |
| 7473637 |
ALD formed titanium nitride films |
Jan. 6, 2009 |
| 7473638 |
Plasma-enhanced cyclic layer deposition process for barrier layers |
Jan. 6, 2009 |
| 7470617 |
Treating a liner layer to reduce surface oxides |
Dec. 30, 2008 |
| 7468318 |
Method for manufacturing mold type semiconductor device |
Dec. 23, 2008 |
| 7465658 |
Oxygen bridge structures and methods to form oxygen bridge structures |
Dec. 16, 2008 |
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