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Class Information
Number: 438/641
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Contacting multiple semiconductive regions (i.e., interconnects) > Multiple metal levels, separated by insulating layer (i.e., multiple level metallization) > Selective deposition
Description: Processes wherein a material is deposited selectively upon the semiconductor substrate.










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8709943 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region Apr. 29, 2014
8647982 Methods of forming interconnects in a semiconductor structure Feb. 11, 2014
8592312 Method for depositing a conductive capping layer on metal lines Nov. 26, 2013
8586471 Seed layers for metallic interconnects and products Nov. 19, 2013
8492273 Method for selective deposition of a semiconductor material Jul. 23, 2013
8481417 Semiconductor structures including tight pitch contacts and methods to form same Jul. 9, 2013
8461044 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region Jun. 11, 2013
8450197 Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forces May. 28, 2013
8404582 Structure and method for manufacturing interconnect structures having self-aligned dielectric caps Mar. 26, 2013
8389401 Contact elements of semiconductor devices formed on the basis of a partially applied activation layer Mar. 5, 2013
8344513 Barrier for through-silicon via Jan. 1, 2013
8330275 Interconnect structure for semiconductor devices Dec. 11, 2012
8318553 Vertical diode using silicon formed by selective epitaxial growth Nov. 27, 2012
8293647 Bottom up plating by organic surface passivation and differential plating retardation Oct. 23, 2012
8236691 Method of high aspect ratio plug fill Aug. 7, 2012
8211794 Properties of metallic copper diffusion barriers through silicon surface treatments Jul. 3, 2012
8207044 Methods for oxidation of a semiconductor device Jun. 26, 2012
8193090 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region Jun. 5, 2012
8178439 Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices May. 15, 2012
8119525 Process for selective growth of films during ECP plating Feb. 21, 2012
8053356 Interconnect structure for semiconductor devices Nov. 8, 2011
8039966 Structures of and methods and tools for forming in-situ metallic/dielectric caps for interconnects Oct. 18, 2011
8012875 Method and apparatus for workpiece surface modification for selective material deposition Sep. 6, 2011
8004087 Semiconductor device with dual damascene wirings and method for manufacturing same Aug. 23, 2011
7989342 Formation of a reliable diffusion-barrier cap on a Cu-containing interconnect element having grains with different crystal orientations Aug. 2, 2011
7989362 Hafnium lanthanide oxynitride films Aug. 2, 2011
7960274 Structure and method for creating reliable via contacts for interconnect applications Jun. 14, 2011
7955883 Polymer replicated interdigitated electrode array for (bio) sensing applications Jun. 7, 2011
7884018 Method for improving the selectivity of a CVD process Feb. 8, 2011
7867886 Method of enclosing a micro-electromechanical element Jan. 11, 2011
7863183 Method for fabricating last level copper-to-C4 connection with interfacial cap structure Jan. 4, 2011
7834458 Interconnect structure for semiconductor devices Nov. 16, 2010
7829454 Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device Nov. 9, 2010
7799676 Method of manufacturing a contact structure to avoid open issue Sep. 21, 2010
7799407 Bank structure, wiring pattern forming method, device, electro-optical device, and electronic apparatus Sep. 21, 2010
7781326 Formation of a tantalum-nitride layer Aug. 24, 2010
7732329 Method and apparatus for workpiece surface modification for selective material deposition Jun. 8, 2010
7629252 Conformal electroless deposition of barrier layer materials Dec. 8, 2009
7629250 Method for creating electrically conductive elements for semiconductor device structures using laser ablation processes and methods of fabricating semiconductor device assemblies Dec. 8, 2009
7575999 Method for creating conductive elements for semiconductor device structures using laser ablation processes and methods of fabricating semiconductor device assemblies Aug. 18, 2009
7563730 Hafnium lanthanide oxynitride films Jul. 21, 2009
7560376 Method for adjoining adjacent coatings on a processing element Jul. 14, 2009
7544604 Tantalum lanthanide oxynitride films Jun. 9, 2009
7517782 Method of forming a metal layer over a patterned dielectric by wet chemical deposition including an electroless and a powered phase Apr. 14, 2009
7517794 Method for fabricating nanoscale features Apr. 14, 2009
7494926 Method for forming highly conductive metal pattern on flexible substrate and EMI filter using metal pattern formed by the method Feb. 24, 2009
7476614 Method of fabricating semiconductor device Jan. 13, 2009
7368379 Multi-layer interconnect structure for semiconductor devices May. 6, 2008
7344973 Semiconductor device and method of manufacturing the same Mar. 18, 2008
7344977 Method of electroplating a substance over a semiconductor substrate Mar. 18, 2008

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