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Class Information
Number: 438/636
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Contacting multiple semiconductive regions (i.e., interconnects) > Multiple metal levels, separated by insulating layer (i.e., multiple level metallization) > Including use of antireflective layer
Description: Processes including the use of an antireflection layer.










Patents under this class:
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Patent Number Title Of Patent Date Issued
7314824 Nitrogen-free ARC/capping layer and method of manufacturing the same Jan. 1, 2008
7309561 Polymer for forming anti-reflective coating layer Dec. 18, 2007
7303988 Methods of manufacturing multi-level metal lines in semiconductor devices Dec. 4, 2007
7297628 Dynamically controllable reduction of vertical contact diameter through adjustment of etch mask stack for dielectric etch Nov. 20, 2007
7291552 Multi-layer film stack for extinction of substrate reflections during patterning Nov. 6, 2007
7288427 Method for reducing defects after a metal etching in semiconductor devices Oct. 30, 2007
7282439 Anti-reflective coating doped with carbon for use in integrated circuit technology and method of formation Oct. 16, 2007
7279793 System and method for manufacturing semiconductor devices using an anti-reflective coating layer Oct. 9, 2007
7268066 Method for semiconductor gate line dimension reduction Sep. 11, 2007
7256136 Self-patterning of photo-active dielectric materials for interconnect isolation Aug. 14, 2007
7247556 Control of wafer warpage during backend processing Jul. 24, 2007
7232748 BARC/resist via etchback process Jun. 19, 2007
7232746 Method for forming dual damascene interconnection in semiconductor device Jun. 19, 2007
7220679 Method for forming patterns in a semiconductor device May. 22, 2007
7189640 Method of forming damascene structures Mar. 13, 2007
7183200 Method for fabricating a semiconductor device Feb. 27, 2007
7179732 Interconnection structure and fabrication method thereof Feb. 20, 2007
7176130 Plasma treatment for surface of semiconductor device Feb. 13, 2007
7151054 Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks Dec. 19, 2006
7135400 Damascene process capable of avoiding via resist poisoning Nov. 14, 2006
7132362 Semiconductor device with contacts having uniform contact resistance and method for manufacturing the same Nov. 7, 2006
7125741 Rework process of patterned photo-resist layer Oct. 24, 2006
7119009 Semiconductor device with dual damascene wiring Oct. 10, 2006
7101787 System and method for minimizing increases in via resistance by applying a nitrogen plasma after a titanium liner deposition Sep. 5, 2006
7075137 Semiconductor memory having charge trapping memory cells Jul. 11, 2006
7056826 Method of forming copper interconnects Jun. 6, 2006
7052988 Applications and methods of making nitrogen-free anti-reflective layers for semiconductor processing May. 30, 2006
7045454 Chemical mechanical planarization of conductive material May. 16, 2006
7045455 Via electromigration improvement by changing the via bottom geometric profile May. 16, 2006
7030031 Method for forming damascene structure utilizing planarizing material coupled with diffusion barrier material Apr. 18, 2006
7015133 Dual damascene structure formed of low-k dielectric materials Mar. 21, 2006
7015134 Method for reducing anti-reflective coating layer removal during removal of photoresist Mar. 21, 2006
7015135 Method and system for reducing contact defects using non conventional contact formation method for semiconductor cells Mar. 21, 2006
7012022 Self-patterning of photo-active dielectric materials for interconnect isolation Mar. 14, 2006
7008869 Method for forming metal wiring without metal byproducts that create bridge between metal wires in a semiconductor device Mar. 7, 2006
7005374 Method for forming contact hole Feb. 28, 2006
7001836 Two step trench definition procedure for formation of a dual damascene opening in a stack of insulator layers Feb. 21, 2006
7001843 Methods of forming metal lines in semiconductor devices Feb. 21, 2006
7001838 Method of wet etching an inorganic antireflection layer Feb. 21, 2006
7001833 Method for forming openings in low-k dielectric layers Feb. 21, 2006
6987060 Semiconductor device having improved contact hole structure and method for fabricating the same Jan. 17, 2006
6962874 Method for fabricating semiconductor device Nov. 8, 2005
6960523 Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM device Nov. 1, 2005
6960529 Methods for sidewall protection of metal interconnect for unlanded vias using physical vapor deposition Nov. 1, 2005
6958294 Method for photoresist strip, sidewall polymer removal and passivation for aluminum metallization Oct. 25, 2005
6951826 Silicon carbide deposition for use as a low dielectric constant anti-reflective coating Oct. 4, 2005
6948238 Method for dissociating metals from metal compounds Sep. 27, 2005
6939794 Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device Sep. 6, 2005
6936539 Antireflective coating for use during the manufacture of a semiconductor device Aug. 30, 2005
6933227 Semiconductor device and method of forming the same Aug. 23, 2005

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