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Class Information
Number: 438/630
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Contacting multiple semiconductive regions (i.e., interconnects) > Multiple metal levels, separated by insulating layer (i.e., multiple level metallization) > At least one metallization level formed of diverse conductive layers > Diverse conductive layers limited to viahole/plug > Silicide formation
Description: Processes wherein at least one of the diverse conductive layers is a compound of silicon and a metal.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622386 |
Method for improved formation of nickel silicide contacts in semiconductor devices |
Nov. 24, 2009 |
| 7622381 |
Semiconductor structure and the forming method thereof |
Nov. 24, 2009 |
| 7601634 |
Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor |
Oct. 13, 2009 |
| 7579231 |
Semiconductor device and method of manufacturing the same |
Aug. 25, 2009 |
| 7560379 |
Semiconductive device fabricated using a raised layer to silicide the gate |
Jul. 14, 2009 |
| 7557032 |
Silicided recessed silicon |
Jul. 7, 2009 |
| 7553729 |
Method of manufacturing non-volatile memory device |
Jun. 30, 2009 |
| 7550372 |
Method of fabricating conductive lines with silicide layer |
Jun. 23, 2009 |
| 7544616 |
Methods of forming nitride read only memory and word lines thereof |
Jun. 9, 2009 |
| 7534732 |
Semiconductor devices with copper interconnects and composite silicon nitride capping layers |
May. 19, 2009 |
| 7528070 |
Sputtering apparatus and method for forming metal silicide layer using the same |
May. 5, 2009 |
| 7501317 |
Method of manufacturing semiconductor device |
Mar. 10, 2009 |
| 7485572 |
Method for improved formation of cobalt silicide contacts in semiconductor devices |
Feb. 3, 2009 |
| 7473975 |
Fully silicided metal gate semiconductor device structure |
Jan. 6, 2009 |
| 7456096 |
Method of manufacturing silicide layer for semiconductor device |
Nov. 25, 2008 |
| 7456095 |
Method and apparatus for forming nickel silicide with low defect density in FET devices |
Nov. 25, 2008 |
| 7449410 |
Methods of forming CoSi.sub.2, methods of forming field effect transistors, and methods of forming conductive contacts |
Nov. 11, 2008 |
| 7432181 |
Method of forming self-aligned silicides |
Oct. 7, 2008 |
| 7425482 |
Non-volatile memory device and method for fabricating the same |
Sep. 16, 2008 |
| 7422942 |
Method for fabricating a semiconductor device having an insulation film with reduced water content |
Sep. 9, 2008 |
| 7407880 |
Semiconductor device and manufacturing process therefore |
Aug. 5, 2008 |
| 7405154 |
Structure and method of forming electrodeposited contacts |
Jul. 29, 2008 |
| 7405112 |
Low contact resistance CMOS circuits and methods for their fabrication |
Jul. 29, 2008 |
| 7396764 |
Manufacturing method for forming all regions of the gate electrode silicided |
Jul. 8, 2008 |
| 7396570 |
Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers |
Jul. 8, 2008 |
| 7378344 |
Method of manufacturing a semiconductor device including a silicide layer having an NiSi phase provided on source and drain regions |
May. 27, 2008 |
| 7375013 |
Semiconductor integrated circuit device and process for manufacturing the same |
May. 20, 2008 |
| 7375025 |
Method for forming a metal silicide layer in a semiconductor device |
May. 20, 2008 |
| 7361597 |
Semiconductor device and method of fabricating the same |
Apr. 22, 2008 |
| 7354854 |
Nickel silicide method and structure |
Apr. 8, 2008 |
| 7348265 |
Semiconductor device having a silicided gate electrode and method of manufacture therefor |
Mar. 25, 2008 |
| 7338815 |
Semiconductor device manufacturing method |
Mar. 4, 2008 |
| 7326644 |
Semiconductor device and method of fabricating the same |
Feb. 5, 2008 |
| 7307017 |
Semiconductor devices and fabrication methods thereof |
Dec. 11, 2007 |
| 7291555 |
Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon |
Nov. 6, 2007 |
| 7288473 |
Metal layer in semiconductor device and method of forming the same |
Oct. 30, 2007 |
| 7273777 |
Formation of fully silicided (FUSI) gate using a dual silicide process |
Sep. 25, 2007 |
| 7253053 |
Methods of forming transistor devices and capacitor constructions |
Aug. 7, 2007 |
| 7244642 |
Method to obtain fully silicided gate electrodes |
Jul. 17, 2007 |
| 7229911 |
Adhesion improvement for low k dielectrics to conductive materials |
Jun. 12, 2007 |
| 7229921 |
Semiconductor device and manufacturing method for the same |
Jun. 12, 2007 |
| 7223689 |
Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layer |
May. 29, 2007 |
| 7220632 |
Method of forming a semiconductor device and an optical device and structure thereof |
May. 22, 2007 |
| 7220623 |
Method for manufacturing silicide and semiconductor with the silicide |
May. 22, 2007 |
| 7220631 |
Method for fabricating semiconductor device having high withstand voltage transistor |
May. 22, 2007 |
| 7214621 |
Methods of forming devices associated with semiconductor constructions |
May. 8, 2007 |
| 7186604 |
Semiconductor integrated circuit device and method for fabricating the same |
Mar. 6, 2007 |
| 7179737 |
Semiconductor device and a method of manufacturing the same |
Feb. 20, 2007 |
| 7153769 |
Methods of forming a reaction product and methods of forming a conductive metal silicide by reaction of metal with silicon |
Dec. 26, 2006 |
| 7144807 |
Low resistivity titanium silicide on heavily doped semiconductor |
Dec. 5, 2006 |
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