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Class Information
Number: 438/623
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Contacting multiple semiconductive regions (i.e., interconnects) > Multiple metal levels, separated by insulating layer (i.e., multiple level metallization) > Including organic insulating material between metal levels
Description: Processes wherein the intervening dielectric is at least partly composed of organic insulating material.

Patents under this class:
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Patent Number Title Of Patent Date Issued
6703324 Mechanically reinforced highly porous low dielectric constant films Mar. 9, 2004
6696315 Semiconductor device configuration with cavities of submicrometer dimensions and method of fabricating structured cavities Feb. 24, 2004
6693028 Semiconductor device having multilayer wiring structure and method for manufacturing the same Feb. 17, 2004
6686273 Method of fabricating copper interconnects with very low-k inter-level insulator Feb. 3, 2004
6680541 Semiconductor device and process for producing the same Jan. 20, 2004
6677231 Method for increasing adhesion ability of dielectric material in semiconductor Jan. 13, 2004
6677251 Method for forming a hydrophilic surface on low-k dielectric insulating layers for improved adhesion Jan. 13, 2004
6673725 Semiconductor device and method of manufacturing the same Jan. 6, 2004
6673698 Thin film semiconductor package utilizing a glass substrate with composite polymer/metal interconnect layers Jan. 6, 2004
6670271 Growing a dual damascene structure using a copper seed layer and a damascene resist structure Dec. 30, 2003
6667553 H:SiOC coated substrates Dec. 23, 2003
6667215 Method of making transistors Dec. 23, 2003
6660663 Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compounds Dec. 9, 2003
6656284 Semiconductor device manufacturing apparatus having rotatable gas injector and thin film deposition method using the same Dec. 2, 2003
6653734 Convertible hot edge ring to improve low-K dielectric etch Nov. 25, 2003
6653232 Method of manufacturing member pattern and method of manufacturing wiring, circuit substrate, electron source, and image-forming apparatus Nov. 25, 2003
6649512 Method for improving adhesion of a low k dielectric to a barrier layer Nov. 18, 2003
6645848 Method of improving the fabrication of etched semiconductor devices Nov. 11, 2003
6645850 Semiconductor device having cavities with submicrometer dimensions generated by a swelling process Nov. 11, 2003
6645857 Key hole filling Nov. 11, 2003
6646350 Semiconductor device Nov. 11, 2003
6638851 Dual hardmask single damascene integration scheme in an organic low k ILD Oct. 28, 2003
6638358 Method and system for processing a semiconductor device Oct. 28, 2003
6635586 Method of forming a spin-on-glass insulation layer Oct. 21, 2003
6634013 Wiring failure analysis method using simulation of electromigration Oct. 14, 2003
6632735 Method of depositing low dielectric constant carbon doped silicon oxide Oct. 14, 2003
6630395 Methods for fabricating electrical connections to semiconductor structures incorporating low-k dielectric materials Oct. 7, 2003
6627532 Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition Sep. 30, 2003
6627540 Method for forming dual damascene structure in semiconductor device Sep. 30, 2003
6627539 Method of forming dual-damascene interconnect structures employing low-k dielectric materials Sep. 30, 2003
6627533 Method of manufacturing an insulation film in a semiconductor device Sep. 30, 2003
6624061 Semiconductor device and method of manufacturing the same capable of reducing deterioration of low dielectric constant film Sep. 23, 2003
6624062 Wiring structure in semiconductor device and method for forming the same Sep. 23, 2003
6624063 Semiconductor device having low dielectric layer and method of manufacturing thereof Sep. 23, 2003
6617243 Routing for multilayer ceramic substrates to reduce excessive via depth Sep. 9, 2003
6617240 Method of fabricating semiconductor device Sep. 9, 2003
6617239 Subtractive metallization structure and method of making Sep. 9, 2003
6610593 Fabrication of semiconductor device with air gaps for ultra low capacitance interconnections and methods of making same Aug. 26, 2003
6610592 Method for integrating low-K materials in semiconductor fabrication Aug. 26, 2003
6605519 Method for thin film lift-off processes using lateral extended etching masks and device Aug. 12, 2003
6602804 Porous materials Aug. 5, 2003
6599826 Method for fabricating a low dielectric constant material layer Jul. 29, 2003
6599838 Method for forming metal filled semiconductor features to improve a subsequent metal CMP process Jul. 29, 2003
6599846 Method of forming a silica-containing coating film with a low dielectric constant and semiconductor substrate coated with such a film Jul. 29, 2003
6596627 Very low dielectric constant plasma-enhanced CVD films Jul. 22, 2003
6596624 Process for making low dielectric constant hollow chip structures by removing sacrificial dielectric material after the chip is joined to a chip carrier Jul. 22, 2003
6596623 Use of organic spin on materials as a stop-layer for local interconnect, contact and via layers Jul. 22, 2003
6593225 Method of forming a stacked dielectric layer on a semiconductor substrate having metal patterns Jul. 15, 2003
6593247 Method of depositing low k films using an oxidizing plasma Jul. 15, 2003
6593655 Method for producing hydrogenated silicon oxycarbide films having low dielectric constant Jul. 15, 2003

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