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Class Information
Number: 438/621
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > Contacting multiple semiconductive regions (i.e., interconnects) > Contacting diversely doped semiconductive regions (e.g., p-type and n-type regions, etc.)
Description: Processes wherein at least one electrical contact is formed to a semiconductive region which is diversely doped (more heavily doped, oppositely doped, etc.) with respect to the semiconductive region contacted by another electrical contact.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7422965 |
Methods of fabricating p-type transistors including germanium channel regions |
Sep. 9, 2008 |
| 7410817 |
Liquid crystal display device including driving circuit and method of fabricating the same |
Aug. 12, 2008 |
| 7358131 |
Methods of forming SRAM constructions |
Apr. 15, 2008 |
| 7323785 |
Semiconductor device |
Jan. 29, 2008 |
| 7307012 |
Post vertical interconnects formed with silicide etch stop and method of making |
Dec. 11, 2007 |
| 7256143 |
Semiconductor device having self-aligned contact plug and method for fabricating the same |
Aug. 14, 2007 |
| 7247550 |
Silicon carbide-based device contact and contact fabrication method |
Jul. 24, 2007 |
| 7183194 |
Method of forming socket contacts |
Feb. 27, 2007 |
| 7098128 |
Method for filling electrically different features |
Aug. 29, 2006 |
| 6902998 |
Methods of manufacturing semiconductor devices having storage nodes |
Jun. 7, 2005 |
| 6897145 |
Method for fabricating semiconductor device by forming damascene interconnections |
May. 24, 2005 |
| 6838772 |
Semiconductor device |
Jan. 4, 2005 |
| 6815323 |
Ohmic contacts on n-type silicon carbide using carbon films |
Nov. 9, 2004 |
| 6815351 |
Method for contacting a semiconductor configuration |
Nov. 9, 2004 |
| 6812142 |
Method and interlevel dielectric structure for improved metal step coverage |
Nov. 2, 2004 |
| 6808975 |
Method for forming a self-aligned contact hole in a semiconductor device |
Oct. 26, 2004 |
| 6797602 |
Method of manufacturing a semiconductor device with supersaturated source/drain extensions and metal silicide contacts |
Sep. 28, 2004 |
| 6759267 |
Method for forming a phase change memory |
Jul. 6, 2004 |
| 6689661 |
Method for forming minimally spaced MRAM structures |
Feb. 10, 2004 |
| 6638850 |
Method of fabricating a semiconductor device having a trench-gate structure |
Oct. 28, 2003 |
| 6614061 |
Electrostatic discharge-protection semiconductor device |
Sep. 2, 2003 |
| 6613670 |
Method for forming tungsten bit line and devices including the same |
Sep. 2, 2003 |
| 6566176 |
SOI device with wrap-around contact to underside of body, and method of making |
May. 20, 2003 |
| 6551903 |
Melt through contact formation method |
Apr. 22, 2003 |
| 6551877 |
Method of manufacturing memory device |
Apr. 22, 2003 |
| 6531389 |
Method for forming incompletely landed via with attenuated contact resistance |
Mar. 11, 2003 |
| 6514860 |
Integration of organic fill for dual damascene process |
Feb. 4, 2003 |
| 6476438 |
Nonvolatile semiconductor memory device and method of manufacturing the same |
Nov. 5, 2002 |
| 6458685 |
Method of forming a self-aligned contact opening |
Oct. 1, 2002 |
| 6458687 |
Method for forming conductive structures |
Oct. 1, 2002 |
| 6440828 |
Process of fabricating semiconductor device having low-resistive contact without high temperature heat treatment |
Aug. 27, 2002 |
| 6429114 |
Method for fabricating a multilayer ceramic substrate |
Aug. 6, 2002 |
| 6391774 |
Fabrication process of semiconductor device |
May. 21, 2002 |
| 6380063 |
Raised wall isolation device with spacer isolated contacts and the method of so forming |
Apr. 30, 2002 |
| 6376358 |
Method of forming plugs and local interconnect for embedded memory/system-on-chip (SOC) applications |
Apr. 23, 2002 |
| 6346470 |
Method for reducing electromigration in semiconductor interconnect lines |
Feb. 12, 2002 |
| 6335272 |
Buried butted contact and method for fabricating |
Jan. 1, 2002 |
| 6329232 |
Method of manufacturing a semiconductor device |
Dec. 11, 2001 |
| 6329283 |
Method of fabricating self-align-contact |
Dec. 11, 2001 |
| 6297120 |
Method of manufacturing a semiconductor device |
Oct. 2, 2001 |
| 6284591 |
Formation method of interconnection in semiconductor device |
Sep. 4, 2001 |
| 6277720 |
Silicon nitride dopant diffusion barrier in integrated circuits |
Aug. 21, 2001 |
| 6261908 |
Buried local interconnect |
Jul. 17, 2001 |
| 6258647 |
Method of fabricating semiconductor device |
Jul. 10, 2001 |
| 6245658 |
Method of forming low dielectric semiconductor device with rigid, metal silicide lined interconnection system |
Jun. 12, 2001 |
| 6242330 |
Process for breaking silicide stringers extending between silicide areas of different active regions |
Jun. 5, 2001 |
| 6239015 |
Semiconductor device having polysilicon interconnections and method of making same |
May. 29, 2001 |
| 6232220 |
Method for fabricating a semiconductor component having a low contact resistance with respect to heavily doped zones |
May. 15, 2001 |
| 6222267 |
Semiconductor device and manufacturing thereof |
Apr. 24, 2001 |
| 6174807 |
Method of controlling gate dopant penetration and diffusion in a semiconductor device |
Jan. 16, 2001 |
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