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Class Information
Number: 438/606
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > To compound semiconductor > Iii-v compound semiconductor > Ga and as containing semiconductor
Description: Processes wherein the III-V compound semiconductor contains gallium (Ga) and arsenic (As).










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8691606 Method for manufacturing a light emitting diode with smooth surface for reflective electrode Apr. 8, 2014
8680586 Semiconductor light emitting device including GaAs substrate and method for manufacturing the same Mar. 25, 2014
8658482 Compound semiconductor device and method for fabricating the same Feb. 25, 2014
8580627 Compound semiconductor device and method for fabricating the same Nov. 12, 2013
8564067 Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure Oct. 22, 2013
8486193 Systems for forming semiconductor materials by atomic layer deposition Jul. 16, 2013
8471340 Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure Jun. 25, 2013
8409972 Light emitting diode having undoped and unintentionally doped nitride transition layer Apr. 2, 2013
8389393 Nanoparticle synthesis Mar. 5, 2013
8372738 Method for manufacturing a gallium nitride based semiconductor device with improved termination scheme Feb. 12, 2013
8354336 Forming an electrode having reduced corrosion and water decomposition on surface using an organic protective layer Jan. 15, 2013
8349743 Method for fabricating light emitting device Jan. 8, 2013
8273591 Super lattice/quantum well nanowires Sep. 25, 2012
8143147 Methods and systems for forming thin films Mar. 27, 2012
8143647 Relaxed InGaN/AlGaN templates Mar. 27, 2012
8143154 Relaxed InGaN/AlGaN templates Mar. 27, 2012
8133806 Systems and methods for forming semiconductor materials by atomic layer deposition Mar. 13, 2012
8008215 Integration of buried oxide layers with crystalline layers Aug. 30, 2011
7998877 Diffraction grating in conjunction with reduced thickness to increase efficiency of solar cells Aug. 16, 2011
7989239 Light emitting diode and method of manufacturing the same Aug. 2, 2011
7981712 Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip Jul. 19, 2011
7964424 Method for manufacturing nitride semiconductor light-emitting element Jun. 21, 2011
7863714 Monolithic MEMS and integrated circuit device having a barrier and method of fabricating the same Jan. 4, 2011
7855108 Semiconductor heterojunction devices based on SiC Dec. 21, 2010
7842595 Fabricating electronic-photonic devices having an active layer with spherical quantum dots Nov. 30, 2010
7820541 Process for forming low defect density heterojunctions Oct. 26, 2010
7786581 Method of manufacturing a semiconductor device having an even coating thickness using electro-less plating, and related device Aug. 31, 2010
7708832 Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate May. 4, 2010
7704764 Fabrication method of GaN power LEDs with electrodes formed by composite optical coatings Apr. 27, 2010
7687323 Surface-roughening method Mar. 30, 2010
7687376 Method of manufacturing vertical gallium nitride-based light emitting diode Mar. 30, 2010
7682857 Method for manufacturing semiconductor optical device Mar. 23, 2010
7678629 Method for fabricating a recessed ohmic contact for a PHEMT structure Mar. 16, 2010
7642182 ESD protection for passive integrated devices Jan. 5, 2010
7628896 Coated article with transparent conductive oxide film doped to adjust Fermi level, and method of making same Dec. 8, 2009
7592619 Epitaxy layer and method of forming the same Sep. 22, 2009
7494855 Compound semiconductor device and method for fabricating the same Feb. 24, 2009
7445975 Method for the production of a semiconductor component having a metallic gate electrode disposed in a double-recess structure Nov. 4, 2008
7420226 Method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on engineered substrates Sep. 2, 2008
7354820 Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating Apr. 8, 2008
7354816 Field effect transistor with gate spacer structure and low-resistance channel coupling Apr. 8, 2008
7303933 Process of manufacturing a semiconductor device Dec. 4, 2007
7259084 Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer Aug. 21, 2007
7118929 Process for producing an epitaxial layer of gallium nitride Oct. 10, 2006
7096873 Method for manufacturing a group III nitride compound semiconductor device Aug. 29, 2006
6956127 Alkyl group VA metal compounds Oct. 18, 2005
6955980 Reducing the migration of grain boundaries Oct. 18, 2005
6933220 Thyristor switch for microwave signals Aug. 23, 2005
6924162 Process of manufacturing a semiconductor device Aug. 2, 2005
6920167 Semiconductor laser device and method for fabricating thereof Jul. 19, 2005

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