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Class Information
Number: 438/604
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > To compound semiconductor > Iii-v compound semiconductor
Description: Processes wherein the compound semiconductor is composed of elements of Group III (i.e., boron (B), aluminum (Al), gallium (Ga), and indium (In)) and Group V (i.e., nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), and bismuth (Bi)).










Sub-classes under this class:

Class Number Class Name Patents
438/606 Ga and as containing semiconductor 200
438/605 Multilayer electrode 173


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8709548 Method of making a CIG target by spray forming Apr. 29, 2014
8680586 Semiconductor light emitting device including GaAs substrate and method for manufacturing the same Mar. 25, 2014
8674398 Group III nitride semiconductor light emitting device and production method thereof, and lamp Mar. 18, 2014
8658482 Compound semiconductor device and method for fabricating the same Feb. 25, 2014
8652959 n- and p-channel field effect transistors with single quantum well for complementary circuits Feb. 18, 2014
8652958 Vertical deep ultraviolet light emitting diodes Feb. 18, 2014
8648459 Nitride based semiconductor package and method of manufacturing the same and bonding substrate Feb. 11, 2014
8643024 In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N Feb. 4, 2014
8633569 AlN inter-layers in III-N material grown on REO/silicon substrate Jan. 21, 2014
8617976 Source/drain re-growth for manufacturing III-V based transistors Dec. 31, 2013
8609517 MOCVD for growing III-V compound semiconductors on silicon substrates Dec. 17, 2013
8609518 Re-growing source/drain regions from un-relaxed silicon layer Dec. 17, 2013
8592298 Fabrication of floating guard rings using selective regrowth Nov. 26, 2013
8580670 Migration and plasma enhanced chemical vapor deposition Nov. 12, 2013
8575004 Lift-off structure for substrate of a photoelectric device and the method thereof Nov. 5, 2013
8569794 Group III nitride semiconductor device and method for manufacturing the same, group III nitride semiconductor light-emitting device and method for manufacturing the same, and lamp Oct. 29, 2013
8552531 Nitride-based compound semiconductor and nitride-based compound semiconductor device Oct. 8, 2013
8545736 Method for preparing metal phosphide nanocrystal from phosphite compound and method for passivating nanocrystal core with the same Oct. 1, 2013
8536043 Reduced S/D contact resistance of III-V MOSFET using low temperature metal-induced crystallization of n+ Ge Sep. 17, 2013
8519538 Laser etch via formation Aug. 27, 2013
8492261 Damascene contacts on III-V CMOS devices Jul. 23, 2013
8492185 Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices Jul. 23, 2013
8486193 Systems for forming semiconductor materials by atomic layer deposition Jul. 16, 2013
8481344 Methods of evaporating metal onto a semiconductor wafer in a test wafer holder Jul. 9, 2013
8481376 Group III nitride semiconductor devices with silicon nitride layers and methods of manufacturing such devices Jul. 9, 2013
8476158 Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture Jul. 2, 2013
8470626 Method of fabricating light emitting diode Jun. 25, 2013
8435879 Method for making group III nitride articles May. 7, 2013
8435880 Method for manufacturing semiconductor device and semiconductor device May. 7, 2013
8431475 Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperature Apr. 30, 2013
8431476 Method to prevent surface decomposition of III-V compound semiconductors Apr. 30, 2013
8415180 Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device Apr. 9, 2013
8415772 Method to prevent surface decomposition of III-V compound semiconductors Apr. 9, 2013
8399367 Process for high-pressure nitrogen annealing of metal nitrides Mar. 19, 2013
8395263 Semiconductor light emitting device and method for manufacturing the same Mar. 12, 2013
8395184 Semiconductor device based on the cubic silicon carbide single crystal thin film Mar. 12, 2013
8383438 Method for fabricating InGaAIN light-emitting diodes with a metal substrate Feb. 26, 2013
8357607 Method for fabricating nitride-based semiconductor device having electrode on m-plane Jan. 22, 2013
8333840 Metal organic chemical vapor deposition apparatus and method Dec. 18, 2012
8334199 Method for fabricating nitride-based semiconductor device having electrode on m-plane Dec. 18, 2012
8329571 Deposition methods for the formation of III/V semiconductor materials, and related structures Dec. 11, 2012
8318594 Method for fabricating nitride-based semiconductor device having electrode on m-plane Nov. 27, 2012
8304334 III-V compound crystal and semiconductor electronic circuit element Nov. 6, 2012
8278128 Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut Oct. 2, 2012
8273649 Method to prevent surface decomposition of III-V compound semiconductors Sep. 25, 2012
8252205 Method for preparing metal phosphide nanocrystal from phosphite compound and method for passivating nanocrystal core with the same Aug. 28, 2012
8252662 Method and structure for manufacture of light emitting diode devices using bulk GaN Aug. 28, 2012
8253221 Gallium nitride bulk crystals and their growth method Aug. 28, 2012
8242540 Epitaxial growth of III-V compound semiconductors on silicon surfaces Aug. 14, 2012
8227898 Ohmic contact on a p-type principal surface tilting with respect to the c-plane Jul. 24, 2012

1 2 3 4 5 6 7










 
 
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