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Class Information
Number: 438/603
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > To compound semiconductor > Ii-vi compound semiconductor
Description: Processes wherein the compound semiconductor is composed of elements of Group II (i.e., zinc (Zn), cadmium (Cd), and mercury (Hg)) and Group VI (i.e., oxygen (O), sulfur (S), selenium (Se), and tellurium (Te)).










Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8685848 Manufacturing method of silicon carbide semiconductor device Apr. 1, 2014
8673401 Gallium ink and methods of making and using same Mar. 18, 2014
8618411 Method of making photovoltaic cell Dec. 31, 2013
8580126 Piezoelectric vibrating pieces comprising edge mesa steps, and methods for manufacturing same Nov. 12, 2013
8564129 Low resistivity contact Oct. 22, 2013
8476105 Method of making a transparent conductive oxide layer and a photovoltaic device Jul. 2, 2013
8395184 Semiconductor device based on the cubic silicon carbide single crystal thin film Mar. 12, 2013
8372485 Gallium ink and methods of making and using same Feb. 12, 2013
8119513 Method for making cadmium sulfide layer Feb. 21, 2012
8093618 Multi-layer ohmic electrode, semiconductor light emitting element having multi-layer ohmic electrode, and method of forming same Jan. 10, 2012
8067297 Process for deposition of semiconductor films Nov. 29, 2011
8043937 Method for manufacturing semiconductor substrate Oct. 25, 2011
7939454 Module and lamination process for multijunction cells May. 10, 2011
7923368 Junction formation on wafer substrates using group IV nanoparticles Apr. 12, 2011
7897489 Selective activation of hydrogen passivated silicon and germanium surfaces Mar. 1, 2011
7888256 Process for forming an interface between silicon carbide and silicon oxide with low density of states Feb. 15, 2011
7863178 Method for manufacturing a GaN based optical device Jan. 4, 2011
7847297 Ohmic contact on p-type GaN Dec. 7, 2010
7825020 Method for manufacturing semiconductor device Nov. 2, 2010
7795125 System and process for producing nanowire composites and electronic substrates therefrom Sep. 14, 2010
7749805 Method for manufacturing an integrated circuit including an electrolyte material layer Jul. 6, 2010
7691353 Low dielectric constant group II-VI insulator Apr. 6, 2010
7682857 Method for manufacturing semiconductor optical device Mar. 23, 2010
7569470 Method of forming conducting nanowires Aug. 4, 2009
7553746 Method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material Jun. 30, 2009
7531423 Reduced-resistance finFETs by sidewall silicidation and methods of manufacturing the same May. 12, 2009
7531440 Semiconductor laser device, semiconductor laser system, optical pickup module and manufacturing for semiconductor laser system May. 12, 2009
7498230 Magnesium-doped zinc oxide structures and methods Mar. 3, 2009
7485560 Method for fabricating crystalline silicon thin films Feb. 3, 2009
7468315 System and process for producing nanowire composites and electronic substrates therefrom Dec. 23, 2008
7384834 Semiconductor device and a method of manufacturing the same Jun. 10, 2008
7382021 Insulated gate field-effect transistor having III-VI source/drain layer(s) Jun. 3, 2008
7297625 Group III-V crystal and manufacturing method thereof Nov. 20, 2007
7250360 Single step, high temperature nucleation process for a lattice mismatched substrate Jul. 31, 2007
7179727 Formation of lattice-tuning semiconductor substrates Feb. 20, 2007
7091120 System and process for producing nanowire composites and electronic substrates therefrom Aug. 15, 2006
7087474 Semiconductor device and a method of manufacturing the same Aug. 8, 2006
7071087 Technique to grow high quality ZnSe epitaxy layer on Si substrate Jul. 4, 2006
7045451 Preparation of group IVA and group VIA compounds May. 16, 2006
7012016 Method for growing group-III nitride semiconductor heterostructure on silicon substrate Mar. 14, 2006
6927155 Process for producing semiconductor layers based on III-V nitride semiconductors Aug. 9, 2005
6920167 Semiconductor laser device and method for fabricating thereof Jul. 19, 2005
6893950 Contact structure for an electrically operated II/VI semiconductor element and process for the production thereof May. 17, 2005
6861342 Zinc blende type CrSb compound, method for fabricating the same, and multilayered structure Mar. 1, 2005
6852614 Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen Feb. 8, 2005
6846686 Semiconductor light-emitting device and method of manufacturing the same Jan. 25, 2005
6835660 Method of manufacturing semiconductor device having metal alloy interconnection that has excellent EM lifetime Dec. 28, 2004
6784074 Defect-free semiconductor templates for epitaxial growth and method of making same Aug. 31, 2004
6734033 Ultraviolet light emitting diode May. 11, 2004
6727167 Method of making an aligned electrode on a semiconductor structure Apr. 27, 2004

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