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Class Information
Number: 438/603
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > To form ohmic contact to semiconductive material > To compound semiconductor > Ii-vi compound semiconductor
Description: Processes wherein the compound semiconductor is composed of elements of Group II (i.e., zinc (Zn), cadmium (Cd), and mercury (Hg)) and Group VI (i.e., oxygen (O), sulfur (S), selenium (Se), and tellurium (Te)).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7569470 |
Method of forming conducting nanowires |
Aug. 4, 2009 |
| 7553746 |
Method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material |
Jun. 30, 2009 |
| 7531440 |
Semiconductor laser device, semiconductor laser system, optical pickup module and manufacturing for semiconductor laser system |
May. 12, 2009 |
| 7531423 |
Reduced-resistance finFETs by sidewall silicidation and methods of manufacturing the same |
May. 12, 2009 |
| 7498230 |
Magnesium-doped zinc oxide structures and methods |
Mar. 3, 2009 |
| 7485560 |
Method for fabricating crystalline silicon thin films |
Feb. 3, 2009 |
| 7468315 |
System and process for producing nanowire composites and electronic substrates therefrom |
Dec. 23, 2008 |
| 7384834 |
Semiconductor device and a method of manufacturing the same |
Jun. 10, 2008 |
| 7382021 |
Insulated gate field-effect transistor having III-VI source/drain layer(s) |
Jun. 3, 2008 |
| 7297625 |
Group III-V crystal and manufacturing method thereof |
Nov. 20, 2007 |
| 7250360 |
Single step, high temperature nucleation process for a lattice mismatched substrate |
Jul. 31, 2007 |
| 7179727 |
Formation of lattice-tuning semiconductor substrates |
Feb. 20, 2007 |
| 7091120 |
System and process for producing nanowire composites and electronic substrates therefrom |
Aug. 15, 2006 |
| 7087474 |
Semiconductor device and a method of manufacturing the same |
Aug. 8, 2006 |
| 7071087 |
Technique to grow high quality ZnSe epitaxy layer on Si substrate |
Jul. 4, 2006 |
| 7045451 |
Preparation of group IVA and group VIA compounds |
May. 16, 2006 |
| 7012016 |
Method for growing group-III nitride semiconductor heterostructure on silicon substrate |
Mar. 14, 2006 |
| 6927155 |
Process for producing semiconductor layers based on III-V nitride semiconductors |
Aug. 9, 2005 |
| 6920167 |
Semiconductor laser device and method for fabricating thereof |
Jul. 19, 2005 |
| 6893950 |
Contact structure for an electrically operated II/VI semiconductor element and process for the production thereof |
May. 17, 2005 |
| 6861342 |
Zinc blende type CrSb compound, method for fabricating the same, and multilayered structure |
Mar. 1, 2005 |
| 6852614 |
Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen |
Feb. 8, 2005 |
| 6846686 |
Semiconductor light-emitting device and method of manufacturing the same |
Jan. 25, 2005 |
| 6835660 |
Method of manufacturing semiconductor device having metal alloy interconnection that has excellent EM lifetime |
Dec. 28, 2004 |
| 6784074 |
Defect-free semiconductor templates for epitaxial growth and method of making same |
Aug. 31, 2004 |
| 6734033 |
Ultraviolet light emitting diode |
May. 11, 2004 |
| 6727167 |
Method of making an aligned electrode on a semiconductor structure |
Apr. 27, 2004 |
| 6693339 |
Semiconductor component and method of manufacturing same |
Feb. 17, 2004 |
| 6673641 |
Contact structure for an electric II/VI semiconductor component and a method for the production of the same |
Jan. 6, 2004 |
| 6664570 |
P-type contact electrode device and light-emitting device |
Dec. 16, 2003 |
| 6638846 |
Method of growing p-type ZnO based oxide semiconductor layer and method of manufacturing semiconductor light emitting device |
Oct. 28, 2003 |
| 6593213 |
Synthesis of layers, coatings or films using electrostatic fields |
Jul. 15, 2003 |
| 6555457 |
Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit |
Apr. 29, 2003 |
| 6468890 |
Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device |
Oct. 22, 2002 |
| 6465273 |
Method of making ZnSe based light emitting device with in layer using vibration and pressure |
Oct. 15, 2002 |
| 6461952 |
Method for growing barium titanate thin film |
Oct. 8, 2002 |
| 6429111 |
Methods for fabricating an electrode structure |
Aug. 6, 2002 |
| 6399473 |
Method of producing a II-VI semiconductor component containing selenium and/or sulrfur |
Jun. 4, 2002 |
| 6376273 |
Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device |
Apr. 23, 2002 |
| 6355545 |
Method and apparatus for wiring, wire, and integrated circuit |
Mar. 12, 2002 |
| 6326294 |
Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices |
Dec. 4, 2001 |
| 6281035 |
Ion-beam treatment to prepare surfaces of p-CdTe films |
Aug. 28, 2001 |
| 6251701 |
All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof |
Jun. 26, 2001 |
| 6204560 |
Titanium nitride diffusion barrier for use in non-silicon technologies and method |
Mar. 20, 2001 |
| 6103604 |
High electron mobility transparent conductor |
Aug. 15, 2000 |
| 6083818 |
Electronic devices with strontium barrier film and process for making same |
Jul. 4, 2000 |
| 6033929 |
Method for making II-VI group compound semiconductor device |
Mar. 7, 2000 |
| 5966629 |
Method for fabricating an electrode structure |
Oct. 12, 1999 |
| 5924002 |
Method of manufacturing a semiconductor device having ohmic electrode |
Jul. 13, 1999 |
| 5909632 |
Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films |
Jun. 1, 1999 |
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