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Class Information
Number: 438/596
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > Insulated gate formation > Having sidewall structure > Portion of sidewall structure is conductive
Description: Processes wherein a least a portion of the material features formed along the electrode sidewalls is electrically conductive.










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8623751 Through-hole electrode substrate and method of manufacturing the same Jan. 7, 2014
8575013 Replacement gate fabrication methods Nov. 5, 2013
8551823 Methods of forming lines of capacitorless one transistor DRAM cells, methods of patterning substrates, and methods of forming two conductive lines Oct. 8, 2013
8525232 Semiconductor structure having a wetting layer Sep. 3, 2013
8501611 Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewalls Aug. 6, 2013
8502325 Metal high-K transistor having silicon sidewalls for reduced parasitic capacitance Aug. 6, 2013
8481389 Method of removing high-K dielectric layer on sidewalls of gate structure Jul. 9, 2013
8470670 Method for making semiconductor device Jun. 25, 2013
8450199 Integrating diverse transistors on the same wafer May. 28, 2013
8440528 Method for manufacturing a vertical nonvolatile semiconductor memory device including forming floating gates within the recesses created on the interlayer insulating films May. 14, 2013
8440557 Method for fabricating a semiconductor device by considering the extinction coefficient during etching of an interlayer insulating film May. 14, 2013
8435878 Field effect transistor device and fabrication May. 7, 2013
8431817 Multi-junction solar cell having sidewall bi-layer electrical interconnect Apr. 30, 2013
8415742 Semiconductor memory device and method of forming the same Apr. 9, 2013
8372699 Method for forming a split-gate memory cell Feb. 12, 2013
8350344 Semiconductor device and method of fabricating the same Jan. 8, 2013
8334181 Germanium MOSFET devices and methods for making same Dec. 18, 2012
8324092 Non-volatile semiconductor device and method of fabricating embedded non-volatile semiconductor memory device with sidewall gate Dec. 4, 2012
8310008 Electronic device including a gate electrode having portions with different conductivity types Nov. 13, 2012
8293600 Thermally stabilized electrode structure Oct. 23, 2012
8273648 Circuit structures and methods with BEOL layers configured to block electromagnetic edge interference Sep. 25, 2012
8247286 Semiconductor device having transistor and method of manufacturing the same Aug. 21, 2012
8216907 Process to fabricate a metal high-K transistor having first and second silicon sidewalls for reduced parasitic capacitance Jul. 10, 2012
8173533 Semiconductor memory device and method of forming the same May. 8, 2012
8163641 System for modifying small structures Apr. 24, 2012
8138100 Microelectronic structure by selective deposition Mar. 20, 2012
8093146 Method of fabricating gate electrode using a hard mask with spacers Jan. 10, 2012
8084819 Semiconductor memory device having insulation patterns and cell gate patterns Dec. 27, 2011
8076201 Method of manufacturing flash memory device Dec. 13, 2011
8058127 Manufacturing method of semiconductor power devices Nov. 15, 2011
8012863 Transistors with gate stacks having metal electrodes Sep. 6, 2011
8012811 Methods of forming features in integrated circuits Sep. 6, 2011
8008722 Multi-layer nonvolatile memory devices having vertical charge storage regions Aug. 30, 2011
7994572 MOSFET having recessed channel Aug. 9, 2011
7960798 Structure and method to form multilayer embedded stressors Jun. 14, 2011
7947589 FinFET formation with a thermal oxide spacer hard mask formed from crystalline silicon layer May. 24, 2011
7923365 Methods of forming field effect transistors having stress-inducing sidewall insulating spacers thereon Apr. 12, 2011
7892957 Gate CD trimming beyond photolithography Feb. 22, 2011
7855135 Method to reduce parastic capacitance in a metal high dielectric constant (MHK) transistor Dec. 21, 2010
7843007 Metal high-k transistor having silicon sidewall for reduced parasitic capacitance Nov. 30, 2010
7838406 SONOS-NAND device having a storage region separated between cells Nov. 23, 2010
7838983 Packaged semiconductor device and method of manufacturing the packaged semiconductor device Nov. 23, 2010
7824985 Method for manufacturing a recessed gate transistor Nov. 2, 2010
7795087 Ultra-violet protected tamper resistant embedded EEPROM Sep. 14, 2010
7786538 Semiconductor device having a nickel silicide layer on a single crystal silicon layer Aug. 31, 2010
7776732 Metal high-K transistor having silicon sidewall for reduced parasitic capacitance, and process to fabricate same Aug. 17, 2010
7767569 Method of manufacturing semiconductor device Aug. 3, 2010
7745288 Semiconductor device and a method of manufacturing the same Jun. 29, 2010
7737019 Method for containing a silicided gate within a sidewall spacer in integrated circuit technology Jun. 15, 2010
7682917 Disposable metallic or semiconductor gate spacer Mar. 23, 2010

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