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Class Information
Number: 438/591
Name: Semiconductor device manufacturing: process > Coating with electrically or thermally conductive material > Insulated gate formation > Gate insulator structure constructed of plural layers or nonsilicon containing compound
Description: Processes wherein the gate insulator is a laminate of multiple dielectric layers or is a nonsilicon containing dielectric compound.










Patents under this class:

Patent Number Title Of Patent Date Issued
8704288 Methods for forming etch stop layers, semiconductor devices having the same, and methods for fabricating semiconductor devices Apr. 22, 2014
8691682 Semiconductor device and method for forming the same Apr. 8, 2014
8691643 Methods of forming semiconductor devices Apr. 8, 2014
8685820 Multiple gate dielectric structures and methods of forming the same Apr. 1, 2014
8679962 Integrated circuit metal gate structure and method of fabrication Mar. 25, 2014
8673758 Structure of metal gate and fabrication method thereof Mar. 18, 2014
8673711 Methods of fabricating a semiconductor device having a high-K gate dielectric layer and semiconductor devices fabricated thereby Mar. 18, 2014
8669618 Manufacturing method for semiconductor device having metal gate Mar. 11, 2014
8669609 Non-volatile memory (NVM) cell for endurance and method of making Mar. 11, 2014
8664103 Metal gate stack formation for replacement gate technology Mar. 4, 2014
8664101 Multiple mold structure methods of manufacturing vertical memory devices Mar. 4, 2014
8664053 Semiconductor device with isolation structures and gate insulating film that contain an element for threshold reduction and method of manufacturing the same Mar. 4, 2014
8658525 Methods for a gate replacement process Feb. 25, 2014
8658501 Method and apparatus for flatband voltage tuning of high-k field effect transistors Feb. 25, 2014
8653573 Dielectric layers and memory cells including metal-doped alumina Feb. 18, 2014
8652957 High-K gate dielectric oxide Feb. 18, 2014
8652956 High-k metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterning Feb. 18, 2014
8652908 Semiconductor devices employing high-K dielectric layers as a gate insulating layer and methods of fabricating the same Feb. 18, 2014
8652890 Methods for fabricating integrated circuits with narrow, metal filled openings Feb. 18, 2014
8643123 Method of making a semiconductor structure useful in making a split gate non-volatile memory cell Feb. 4, 2014
8643076 Non-volatile memory device and method for fabricating the same Feb. 4, 2014
8642457 Method of fabricating semiconductor device Feb. 4, 2014
8642424 Replacement metal gate structure and methods of manufacture Feb. 4, 2014
8637390 Metal gate structures and methods for forming thereof Jan. 28, 2014
8633098 Method of manufacturing a semiconductor device Jan. 21, 2014
8629427 Topological insulator-based field-effect transistor Jan. 14, 2014
8629028 Metal oxide semiconductor field effect transistor (MOSFET) gate termination Jan. 14, 2014
8624316 Nonvolatile semiconductor memory device and method of fabricating the same Jan. 7, 2014
8623750 Heat treatment method for promoting crystallization of high dielectric constant film Jan. 7, 2014
8618603 Nonvolatile semiconductor memory device and method for manufacturing same Dec. 31, 2013
8610172 FETs with hybrid channel materials Dec. 17, 2013
8609524 Method for making semiconductor device comprising replacement gate electrode structures with an enhanced diffusion barrier Dec. 17, 2013
8609482 Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation process Dec. 17, 2013
8604556 Gate pattern of semiconductor device and method for fabricating the same Dec. 10, 2013
8603907 Apparatus having a dielectric containing scandium and gadolinium Dec. 10, 2013
8603906 Method of forming a three-dimensional semiconductor memory device comprising sub-cells, terraced structures and strapping regions Dec. 10, 2013
8599616 Three-dimensional NAND memory with stacked mono-crystalline channels Dec. 3, 2013
8598649 Nonvolatile semiconductor memory device and method for manufacturing same Dec. 3, 2013
8598027 High-K transistors with low threshold voltage Dec. 3, 2013
8598001 Method for manufacturing twin bit structure cell with hafnium oxide and nano-crystalline silicon layer Dec. 3, 2013
8592800 Optical devices featuring nonpolar textured semiconductor layers Nov. 26, 2013
8592296 Gate-last fabrication of quarter-gap MGHK FET Nov. 26, 2013
8587039 Method of forming a semiconductor device featuring a gate stressor and semiconductor device Nov. 19, 2013
8580625 Metal oxide semiconductor transistor and method of manufacturing the same Nov. 12, 2013
8575016 Method for etching gate stack Nov. 5, 2013
8569828 Nonvolatile semiconductor storage device and method of manufacture thereof Oct. 29, 2013
8569827 Three-dimensional semiconductor memory devices Oct. 29, 2013
8563441 Methods for fabricating memory cells having fin structures with smooth sidewalls and rounded top corners and edges Oct. 22, 2013
8563411 Semiconductor devices having a diffusion barrier layer and methods of manufacturing the same Oct. 22, 2013
8557697 Vapor deposition methods for forming a metal-containing layer on a substrate Oct. 15, 2013











 
 
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