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Class Information
Number: 438/581
Name: Semiconductor device manufacturing: process > Forming schottky junction (i.e., semiconductor-conductor rectifying junction contact) > Using platinum group metal (i.e., platinum (pt), palladium (pd), rhodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof) > Silicide
Description: Processes for forming a contact using the chemical combination of silicon (Si) with one of the platinum group metals (i.e., platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof).










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8664057 High-K metal gate electrode structures formed by early cap layer adaptation Mar. 4, 2014
8647971 Method of manufacturing junction barrier schottky diode with dual silicides Feb. 11, 2014
8610233 Hybrid MOSFET structure having drain side schottky junction Dec. 17, 2013
8569827 Three-dimensional semiconductor memory devices Oct. 29, 2013
8569837 MOS devices having elevated source/drain regions Oct. 29, 2013
8551874 MOSFET gate and source/drain contact metallization Oct. 8, 2013
8513765 Formation method and structure for a well-controlled metallic source/drain semiconductor device Aug. 20, 2013
8466051 Method for fabricating Schottky device Jun. 18, 2013
8450156 Method for producing a thyristor May. 28, 2013
8444728 Stabilized chemical mechanical polishing composition and method of polishing a substrate May. 21, 2013
8367508 Self-aligned contacts for field effect transistor devices Feb. 5, 2013
8349718 Self-aligned silicide formation on source/drain through contact via Jan. 8, 2013
8283244 Method for forming one transistor DRAM cell structure Oct. 9, 2012
8278198 Semiconductor device and method of producing the same Oct. 2, 2012
8263466 Channel strain induced by strained metal in FET source or drain Sep. 11, 2012
8247319 Method to enable the process and enlarge the process window for silicide, germanide or germanosilicide formation in structures with extremely small dimensions Aug. 21, 2012
8232197 Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed Jul. 31, 2012
8202799 Methods of manufacturing metal-silicide features Jun. 19, 2012
8158483 Semiconductor device and its manufacturing method Apr. 17, 2012
8148262 Method for manufacturing semiconductor device Apr. 3, 2012
8143152 Manufacturing method of semiconductor device having self-aligned contact connected to silicide layer on substrate surface Mar. 27, 2012
8105946 Method of forming conductive lines of semiconductor memory device Jan. 31, 2012
8101511 Method of manufacturing a junction barrier Schottky diode with dual silicides Jan. 24, 2012
8084342 Method of manufacturing a CMOS device with zero soft error rate Dec. 27, 2011
8043912 Manufacturing method of a semiconductor device having polycide wiring layer Oct. 25, 2011
8030154 Method for forming a protection layer over metal semiconductor contact and structure formed thereon Oct. 4, 2011
8021971 Structure and method to form a thermally stable silicide in narrow dimension gate stacks Sep. 20, 2011
8008177 Method for fabricating semiconductor device using a nickel salicide process Aug. 30, 2011
7981735 Method of manufacturing a Schottky barrier tunnel transistor Jul. 19, 2011
7981784 Methods of manufacturing a semiconductor device Jul. 19, 2011
7947560 Method of nickel disilicide formation and method of nickel disilicate source/drain formation May. 24, 2011
7943499 FUSI integration method using SOG as a sacrificial planarization layer May. 17, 2011
7923362 Method for manufacturing a metal-semiconductor contact in semiconductor components Apr. 12, 2011
7902055 Method of manufacturing a dual metal Schottky diode Mar. 8, 2011
7803702 Method for fabricating MOS transistors Sep. 28, 2010
7795100 Semiconductor device and its manufacturing method Sep. 14, 2010
7786537 Semiconductor device and method for manufacturing same Aug. 31, 2010
7759202 Method for forming semiconductor device with gates of different materials Jul. 20, 2010
7749877 Process for forming Schottky rectifier with PtNi silicide Schottky barrier Jul. 6, 2010
7732312 FUSI integration method using SOG as a sacrificial planarization layer Jun. 8, 2010
7732313 FUSI integration method using SOG as a sacrificial planarization layer Jun. 8, 2010
7662716 Method for forming silicide contacts Feb. 16, 2010
7662707 Method of forming relatively continuous silicide layers for semiconductor devices Feb. 16, 2010
7618884 Method and device with durable contact on silicon carbide Nov. 17, 2009
7605076 Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed Oct. 20, 2009
7595234 Fabricating method for a metal oxide semiconductor transistor Sep. 29, 2009
7585767 Semiconductor device and method for fabricating the same Sep. 8, 2009
7566642 Process of manufacturing an N-type Schottky barrier tunnel transistor Jul. 28, 2009
7553729 Method of manufacturing non-volatile memory device Jun. 30, 2009
7550372 Method of fabricating conductive lines with silicide layer Jun. 23, 2009

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