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Class Information
Number: 438/580
Name: Semiconductor device manufacturing: process > Forming schottky junction (i.e., semiconductor-conductor rectifying junction contact) > Using platinum group metal (i.e., platinum (pt), palladium (pd), rhodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof)
Description: Processes for forming a contact using a platinum group metals (i.e., platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof).
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7588667 |
Depositing rhuthenium films using ionized physical vapor deposition (IPVD) |
Sep. 15, 2009 |
| 7553746 |
Method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material |
Jun. 30, 2009 |
| 7276796 |
Formation of oxidation-resistant seed layer for interconnect applications |
Oct. 2, 2007 |
| 7157383 |
Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device |
Jan. 2, 2007 |
| 6872644 |
Semiconductor device with non-compounded contacts, and method of making |
Mar. 29, 2005 |
| 6852612 |
Semiconductor device and method for fabricating the same |
Feb. 8, 2005 |
| 6846731 |
Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films |
Jan. 25, 2005 |
| 6825073 |
Schottky diode with high field breakdown and low reverse leakage current |
Nov. 30, 2004 |
| 6809212 |
Method for producing organometallic compounds |
Oct. 26, 2004 |
| 6734086 |
Semiconductor integrated circuit device and method of manufacturing the same |
May. 11, 2004 |
| 6727194 |
Wafer batch processing system and method |
Apr. 27, 2004 |
| 6699775 |
Manufacturing process for fast recovery diode |
Mar. 2, 2004 |
| 6683001 |
Method for manufacturing a semiconductor device whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed |
Jan. 27, 2004 |
| 6656823 |
Semiconductor device with schottky contact and method for forming the same |
Dec. 2, 2003 |
| 6551932 |
Method for forming metal line in a semiconductor device |
Apr. 22, 2003 |
| 6509234 |
Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gate |
Jan. 21, 2003 |
| 6506676 |
Method of manufacturing semiconductor devices with titanium aluminum nitride work function |
Jan. 14, 2003 |
| 6495423 |
Electronic power device monolithically integrated on a semiconductor and comprising edge protection structures having a limited planar dimension |
Dec. 17, 2002 |
| 6486524 |
Ultra low Irr fast recovery diode |
Nov. 26, 2002 |
| 6448162 |
Method for producing schottky diodes |
Sep. 10, 2002 |
| 6372616 |
Method of manufacturing an electrical interconnection of a semiconductor device using an erosion protecting plug in a contact hole of interlayer dielectric layer |
Apr. 16, 2002 |
| 6313539 |
Semiconductor memory device and production method of the same |
Nov. 6, 2001 |
| 6303479 |
Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts |
Oct. 16, 2001 |
| 6271131 |
Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers |
Aug. 7, 2001 |
| 6268230 |
Semiconductor light emitting device |
Jul. 31, 2001 |
| 6245650 |
Process for production of semiconductor device |
Jun. 12, 2001 |
| 6229193 |
Multiple stage high power diode |
May. 8, 2001 |
| 6221788 |
Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor substrate |
Apr. 24, 2001 |
| 6162712 |
Platinum source compositions for chemical vapor deposition of platinum |
Dec. 19, 2000 |
| 6150246 |
Method of making Os and W/WC/TiC ohmic and rectifying contacts on SiC |
Nov. 21, 2000 |
| 6140215 |
Method and apparatus for low temperature deposition of CVD and PECVD films |
Oct. 31, 2000 |
| 6096629 |
Uniform sidewall profile etch method for forming low contact leakage schottky diode contact |
Aug. 1, 2000 |
| 6087702 |
Rare-earth schottky diode structure |
Jul. 11, 2000 |
| 6063692 |
Oxidation barrier composed of a silicide alloy for a thin film and method of construction |
May. 16, 2000 |
| 6037233 |
Metal-encapsulated polysilicon gate and interconnect |
Mar. 14, 2000 |
| 5874364 |
Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same |
Feb. 23, 1999 |
| 5516725 |
Process for preparing schottky diode contacts with predetermined barrier heights |
May. 14, 1996 |
| 5397716 |
Method of forming an insulated gate semiconductor device |
Mar. 14, 1995 |
| 5270252 |
Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide |
Dec. 14, 1993 |
| 5212401 |
High temperature rectifying contact |
May. 18, 1993 |
| 4691435 |
Method for making Schottky diode having limited area self-aligned guard ring |
Sep. 8, 1987 |
| 4687537 |
Epitaxial metal silicide layers |
Aug. 18, 1987 |
| 4472872 |
Method of fabricating a Schottky gate field effect transistor |
Sep. 25, 1984 |
| 4289602 |
Electrochemical oxidation of amorphous silicon |
Sep. 15, 1981 |
| 4213840 |
Low-resistance, fine-line semiconductor device and the method for its manufacture |
Jul. 22, 1980 |
| 4206540 |
Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier |
Jun. 10, 1980 |
| 4096622 |
Ion implanted Schottky barrier diode |
Jun. 27, 1978 |
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