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Class Information
Number: 438/577
Name: Semiconductor device manufacturing: process > Forming schottky junction (i.e., semiconductor-conductor rectifying junction contact) > Compound semiconductor > Into grooved or recessed semiconductor region > Utilizing lift-off
Description: Processes including a step of material removal via a lift-off technique.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8703611 Method for manufacturing a semiconductor structure Apr. 22, 2014
8486816 Diamond semiconductor element and process for producing the same Jul. 16, 2013
8048789 Mesoscale pyramids, arrays and methods of preparation Nov. 1, 2011
7923362 Method for manufacturing a metal-semiconductor contact in semiconductor components Apr. 12, 2011
7811906 Carbon-on-insulator substrates by in-place bonding Oct. 12, 2010
7582518 High electron mobility transistor semiconductor device and fabrication method thereof Sep. 1, 2009
7439166 Method for producing tiered gate structure devices Oct. 21, 2008
7132358 Method of forming solder bump with reduced surface defects Nov. 7, 2006
6929958 Method to make small isolated features with pseudo-planarization for TMR and MRAM applications Aug. 16, 2005
6887792 Embossed mask lithography May. 3, 2005
6784081 Gate structure forming method of field effect transistor Aug. 31, 2004
6720200 Field effect transistor and fabrication process thereof Apr. 13, 2004
6524937 Selective T-gate process Feb. 25, 2003
6492214 Method of fabricating an insulating layer Dec. 10, 2002
6204102 Method of fabricating compound semiconductor devices using lift-off of insulating film Mar. 20, 2001
6117713 Method of producing a MESFET semiconductor device having a recessed gate structure Sep. 12, 2000
6051485 Method of producing a platinum-metal pattern or structure by a lift-off process Apr. 18, 2000
5981309 Method for fabricating charge coupled device image sensor Nov. 9, 1999
5940697 T-gate MESFET process using dielectric film lift-off technique Aug. 17, 1999
5882995 Method of forming ohmic electrodes on semiconductor wafer Mar. 16, 1999
5869364 Single layer integrated metal process for metal semiconductor field effect transistor (MESFET) Feb. 9, 1999
5858824 Method of forming fine electrode on semiconductor substrate Jan. 12, 1999
5856232 Method for fabricating T-shaped electrode and metal layer having low resistance Jan. 5, 1999
5854086 Method for manufacturing planar field effect transistors and planar high electron mobility transistors Dec. 29, 1998
5796132 Semiconductor device Aug. 18, 1998
5733806 Method for forming a self-aligned semiconductor device Mar. 31, 1998
5705432 Process for providing clean lift-off of sputtered thin film layers Jan. 6, 1998
5643807 Method of manufacturing a semiconductor device comprising a buried channel field effect transistor Jul. 1, 1997
5610090 Method of making a FET having a recessed gate structure Mar. 11, 1997
5587328 Method for manufacturing semiconductor device Dec. 24, 1996
5563079 Method of making a field effect transistor Oct. 8, 1996
5538910 Method of making a narrow gate electrode for a field effect transistor Jul. 23, 1996
5538910 Method of making a narrow gate electrode for a field effect transistor Jul. 23, 1996
5486483 Method of forming closely spaced metal electrodes in a semiconductor device Jan. 23, 1996
5432119 High yield electron-beam gate fabrication method for sub-micron gate FETS Jul. 11, 1995
5385851 Method of manufacturing HEMT device using novolak-based positive-type resist Jan. 31, 1995
5362677 Method for producing a field effect transistor with a gate recess structure Nov. 8, 1994
5338703 Method for producing a recessed gate field effect transistor Aug. 16, 1994
5304511 Production method of T-shaped gate electrode in semiconductor device Apr. 19, 1994
5288654 Method of making a mushroom-shaped gate electrode of semiconductor device Feb. 22, 1994
5240869 Method for fabricating a field effect transistor Aug. 31, 1993
5185278 Method of making self-aligned gate providing improved breakdown voltage Feb. 9, 1993
5155053 Method of forming T-gate structure on microelectronic device substrate Oct. 13, 1992
5139968 Method of producing a t-shaped gate electrode Aug. 18, 1992
5130764 Multi layer photopolymeric structure for the manufacturing of MESFET devices with submicrometric gate and variable length recessed channel Jul. 14, 1992
5112763 Process for forming a Schottky barrier gate May. 12, 1992
5110751 Method of manufacturing a compound semiconductor device May. 5, 1992
5091342 Multilevel resist plated transfer layer process for fine line lithography Feb. 25, 1992
5053348 Fabrication of self-aligned, T-gate HEMT Oct. 1, 1991
5030589 Production method for a semiconductor device Jul. 9, 1991

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