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Class Information
Number: 438/576
Name: Semiconductor device manufacturing: process > Forming schottky junction (i.e., semiconductor-conductor rectifying junction contact) > Compound semiconductor > Into grooved or recessed semiconductor region
Description: Processes wherein the contact is formed in a recess in the semiconductor substrate.










Sub-classes under this class:

Class Number Class Name Patents
438/578 Forming electrode of specified shape (e.g., slanted, etc.) 67
438/577 Utilizing lift-off 70


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7074623 Methods of forming strained-semiconductor-on-insulator finFET device structures Jul. 11, 2006
7064408 Schottky barrier diode and method of making the same Jun. 20, 2006
7002187 Integrated schottky diode using buried power buss structure and method for making same Feb. 21, 2006
6921957 Low forward voltage drop schottky barrier diode and manufacturing method therefor Jul. 26, 2005
6887747 Method of forming a MISFET having a schottky junctioned silicide May. 3, 2005
6864145 Method of fabricating a robust gate dielectric using a replacement gate flow Mar. 8, 2005
6855593 Trench Schottky barrier diode Feb. 15, 2005
6844251 Method of forming a semiconductor device with a junction termination layer Jan. 18, 2005
6825105 Manufacture of semiconductor devices with Schottky barriers Nov. 30, 2004
6825073 Schottky diode with high field breakdown and low reverse leakage current Nov. 30, 2004
6770548 Trench schottky rectifier Aug. 3, 2004
6762098 Trench DMOS transistor with embedded trench schottky rectifier Jul. 13, 2004
6740951 Two-mask trench schottky diode May. 25, 2004
6649497 Method of forming vias in silicon carbide and resulting devices and circuits Nov. 18, 2003
6593620 Trench DMOS transistor with embedded trench schottky rectifier Jul. 15, 2003
6576973 Schottky diode on a silicon carbide substrate Jun. 10, 2003
6573129 Gate electrode formation in double-recessed transistor by two-step etching Jun. 3, 2003
6518152 Method of forming a trench schottky rectifier Feb. 11, 2003
6509234 Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gate Jan. 21, 2003
6475890 Fabrication of a field effect transistor with an upside down T-shaped semiconductor pillar in SOI technology Nov. 5, 2002
6455403 Shallow trench contact structure to solve the problem of schottky diode leakage Sep. 24, 2002
6417035 Method for manufacturing a field effect transistor Jul. 9, 2002
6395588 Compound semiconductor device and method of manufacturing the same May. 28, 2002
6316318 Angled implant to build MOS transistors in contact holes Nov. 13, 2001
6316302 Isotropically etching sidewall spacers to be used for both an NMOS source/drain implant and a PMOS LDD implant Nov. 13, 2001
6307221 InxGa1-xP etch stop layer for double recess pseudomorphic high electron mobility transistor structures Oct. 23, 2001
6242293 Process for fabricating double recess pseudomorphic high electron mobility transistor structures Jun. 5, 2001
6218688 Schottky diode with reduced size Apr. 17, 2001
6204102 Method of fabricating compound semiconductor devices using lift-off of insulating film Mar. 20, 2001
6180440 Method of fabricating a recessed-gate FET without producing voids in the gate metal Jan. 30, 2001
6165826 Transistor with low resistance tip and method of fabrication in a CMOS process Dec. 26, 2000
6156611 Method of fabricating vertical FET with sidewall gate electrode Dec. 5, 2000
6127272 Method of electron beam lithography on very high resistivity substrates Oct. 3, 2000
6096641 Method of manufacturing semiconductor device Aug. 1, 2000
6083782 High performance GaAs field effect transistor structure Jul. 4, 2000
6066548 Advance metallization process May. 23, 2000
6057219 Method of forming an ohmic contact to a III-V semiconductor material May. 2, 2000
5994753 Semiconductor device and method for fabricating the same Nov. 30, 1999
5981319 Method of forming a T-shaped gate Nov. 9, 1999
5770525 Method of fabricating semiconductor device and method of fabricating high-frequency semiconductor device Jun. 23, 1998
5702972 Method of fabricating MOSFET devices Dec. 30, 1997
5681766 Method of making integrated circuit capable of low-noise and high-power microwave operation Oct. 28, 1997
5654214 Method of manufacturing a semiconductor device having at least two field effect transistors with different pinch-off voltages Aug. 5, 1997
5643807 Method of manufacturing a semiconductor device comprising a buried channel field effect transistor Jul. 1, 1997
5580419 Process of making semiconductor device using focused ion beam for resistless in situ etching, deposition, and nucleation Dec. 3, 1996
5559046 Semiconductor device having a hollow around a gate electrode and a method for producing the same Sep. 24, 1996
5556797 Method of fabricating a self-aligned double recess gate profile Sep. 17, 1996
5534452 Method for producing semiconductor device Jul. 9, 1996
5500381 Fabrication method of field-effect transistor Mar. 19, 1996
5471073 Field effect transistor and method for producing the field effect transistor Nov. 28, 1995

1 2 3










 
 
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