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Class Information
Number: 438/576
Name: Semiconductor device manufacturing: process > Forming schottky junction (i.e., semiconductor-conductor rectifying junction contact) > Compound semiconductor > Into grooved or recessed semiconductor region
Description: Processes wherein the contact is formed in a recess in the semiconductor substrate.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6770548 |
Trench schottky rectifier |
Aug. 3, 2004 |
| 6762098 |
Trench DMOS transistor with embedded trench schottky rectifier |
Jul. 13, 2004 |
| 6740951 |
Two-mask trench schottky diode |
May. 25, 2004 |
| 6649497 |
Method of forming vias in silicon carbide and resulting devices and circuits |
Nov. 18, 2003 |
| 6593620 |
Trench DMOS transistor with embedded trench schottky rectifier |
Jul. 15, 2003 |
| 6576973 |
Schottky diode on a silicon carbide substrate |
Jun. 10, 2003 |
| 6573129 |
Gate electrode formation in double-recessed transistor by two-step etching |
Jun. 3, 2003 |
| 6518152 |
Method of forming a trench schottky rectifier |
Feb. 11, 2003 |
| 6509234 |
Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gate |
Jan. 21, 2003 |
| 6475890 |
Fabrication of a field effect transistor with an upside down T-shaped semiconductor pillar in SOI technology |
Nov. 5, 2002 |
| 6455403 |
Shallow trench contact structure to solve the problem of schottky diode leakage |
Sep. 24, 2002 |
| 6417035 |
Method for manufacturing a field effect transistor |
Jul. 9, 2002 |
| 6395588 |
Compound semiconductor device and method of manufacturing the same |
May. 28, 2002 |
| 6316318 |
Angled implant to build MOS transistors in contact holes |
Nov. 13, 2001 |
| 6316302 |
Isotropically etching sidewall spacers to be used for both an NMOS source/drain implant and a PMOS LDD implant |
Nov. 13, 2001 |
| 6307221 |
InxGa1-xP etch stop layer for double recess pseudomorphic high electron mobility transistor structures |
Oct. 23, 2001 |
| 6242293 |
Process for fabricating double recess pseudomorphic high electron mobility transistor structures |
Jun. 5, 2001 |
| 6218688 |
Schottky diode with reduced size |
Apr. 17, 2001 |
| 6204102 |
Method of fabricating compound semiconductor devices using lift-off of insulating film |
Mar. 20, 2001 |
| 6180440 |
Method of fabricating a recessed-gate FET without producing voids in the gate metal |
Jan. 30, 2001 |
| 6165826 |
Transistor with low resistance tip and method of fabrication in a CMOS process |
Dec. 26, 2000 |
| 6156611 |
Method of fabricating vertical FET with sidewall gate electrode |
Dec. 5, 2000 |
| 6127272 |
Method of electron beam lithography on very high resistivity substrates |
Oct. 3, 2000 |
| 6096641 |
Method of manufacturing semiconductor device |
Aug. 1, 2000 |
| 6083782 |
High performance GaAs field effect transistor structure |
Jul. 4, 2000 |
| 6066548 |
Advance metallization process |
May. 23, 2000 |
| 6057219 |
Method of forming an ohmic contact to a III-V semiconductor material |
May. 2, 2000 |
| 5994753 |
Semiconductor device and method for fabricating the same |
Nov. 30, 1999 |
| 5981319 |
Method of forming a T-shaped gate |
Nov. 9, 1999 |
| 5770525 |
Method of fabricating semiconductor device and method of fabricating high-frequency semiconductor device |
Jun. 23, 1998 |
| 5702972 |
Method of fabricating MOSFET devices |
Dec. 30, 1997 |
| 5681766 |
Method of making integrated circuit capable of low-noise and high-power microwave operation |
Oct. 28, 1997 |
| 5654214 |
Method of manufacturing a semiconductor device having at least two field effect transistors with different pinch-off voltages |
Aug. 5, 1997 |
| 5643807 |
Method of manufacturing a semiconductor device comprising a buried channel field effect transistor |
Jul. 1, 1997 |
| 5580419 |
Process of making semiconductor device using focused ion beam for resistless in situ etching, deposition, and nucleation |
Dec. 3, 1996 |
| 5559046 |
Semiconductor device having a hollow around a gate electrode and a method for producing the same |
Sep. 24, 1996 |
| 5556797 |
Method of fabricating a self-aligned double recess gate profile |
Sep. 17, 1996 |
| 5534452 |
Method for producing semiconductor device |
Jul. 9, 1996 |
| 5500381 |
Fabrication method of field-effect transistor |
Mar. 19, 1996 |
| 5471073 |
Field effect transistor and method for producing the field effect transistor |
Nov. 28, 1995 |
| 5445979 |
Method of making field effect compound semiconductor device with eaves electrode |
Aug. 29, 1995 |
| 5436201 |
Dual etchant process, particularly for gate recess fabrication in GaAs MMIC chips |
Jul. 25, 1995 |
| 5389574 |
Selective etching method for III-V group semiconductor material using a mixed etching gas and a stop-etching gas |
Feb. 14, 1995 |
| 5364816 |
Fabrication method for III-V heterostructure field-effect transistors |
Nov. 15, 1994 |
| 5324682 |
Method of making an integrated circuit capable of low-noise and high-power microwave operation |
Jun. 28, 1994 |
| 5300795 |
GaAs FET with resistive AlGaAs |
Apr. 5, 1994 |
| 5298444 |
Method for manufacturing a field effect transistor |
Mar. 29, 1994 |
| 5298445 |
Method for fabricating a field effect transistor |
Mar. 29, 1994 |
| 5270228 |
Method of fabricating gate electrode in recess |
Dec. 14, 1993 |
| 5254492 |
Method of fabricating an integrated circuit for providing low-noise and high-power microwave operation |
Oct. 19, 1993 |
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