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Class Information
Number: 438/575
Name: Semiconductor device manufacturing: process > Forming schottky junction (i.e., semiconductor-conductor rectifying junction contact) > Compound semiconductor > Multilayer electrode > Using platinum group metal (i.e., platinum (pt), palladium (pd), rodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof)
Description: Processes for forming a contact using a platinum group metals (i.e., platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Rh), iridium (Ir), osmium (Os), or alloy thereof).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7553746 |
Method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material |
Jun. 30, 2009 |
| 7514344 |
Lateral bipolar transistor |
Apr. 7, 2009 |
| 7470605 |
Method for fabrication of a MOS transistor |
Dec. 30, 2008 |
| 7393785 |
Methods and apparatus for forming rhodium-containing layers |
Jul. 1, 2008 |
| 7378310 |
Method for manufacturing a memory device having a nanocrystal charge storage region |
May. 27, 2008 |
| 7226861 |
Methods and apparatus for forming rhodium-containing layers |
Jun. 5, 2007 |
| 7141498 |
Method of forming an ohmic contact in wide band semiconductor |
Nov. 28, 2006 |
| 7064408 |
Schottky barrier diode and method of making the same |
Jun. 20, 2006 |
| 7056841 |
Method for fabricating semiconductor device |
Jun. 6, 2006 |
| 6927166 |
Method for manufacturing semiconductor devices and integrated circuit capacitors whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed |
Aug. 9, 2005 |
| 6852612 |
Semiconductor device and method for fabricating the same |
Feb. 8, 2005 |
| 6846731 |
Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films |
Jan. 25, 2005 |
| 6825073 |
Schottky diode with high field breakdown and low reverse leakage current |
Nov. 30, 2004 |
| 6734086 |
Semiconductor integrated circuit device and method of manufacturing the same |
May. 11, 2004 |
| 6683001 |
Method for manufacturing a semiconductor device whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed |
Jan. 27, 2004 |
| 6667196 |
Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
Dec. 23, 2003 |
| 6656823 |
Semiconductor device with schottky contact and method for forming the same |
Dec. 2, 2003 |
| 6576524 |
Method of making a prismatic capacitor |
Jun. 10, 2003 |
| 6576481 |
Method of manufacturing semiconductor devices |
Jun. 10, 2003 |
| 6448162 |
Method for producing schottky diodes |
Sep. 10, 2002 |
| 6388272 |
W/WC/TAC ohmic and rectifying contacts on SiC |
May. 14, 2002 |
| 6271131 |
Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers |
Aug. 7, 2001 |
| 6268230 |
Semiconductor light emitting device |
Jul. 31, 2001 |
| 6229193 |
Multiple stage high power diode |
May. 8, 2001 |
| 6184564 |
Schottky diode with adjusted barrier height and process for its manufacture |
Feb. 6, 2001 |
| 6150246 |
Method of making Os and W/WC/TiC ohmic and rectifying contacts on SiC |
Nov. 21, 2000 |
| 6087702 |
Rare-earth schottky diode structure |
Jul. 11, 2000 |
| 6033929 |
Method for making II-VI group compound semiconductor device |
Mar. 7, 2000 |
| 5908307 |
Fabrication method for reduced-dimension FET devices |
Jun. 1, 1999 |
| 5888891 |
Process for manufacturing a schottky diode with enhanced barrier height and high thermal stability |
Mar. 30, 1999 |
| 5610098 |
N-INP Schottky diode structure and a method of making the same |
Mar. 11, 1997 |
| 5517054 |
N-InP Schottky diode structure and a method of making the same |
May. 14, 1996 |
| 5459087 |
Method of fabricating a multi-layer gate electrode with annealing step |
Oct. 17, 1995 |
| 5432126 |
Fabrication process of compound semiconductor device comprising L-shaped gate electrode |
Jul. 11, 1995 |
| 5270228 |
Method of fabricating gate electrode in recess |
Dec. 14, 1993 |
| 4923827 |
T-type undercut electrical contact process on a semiconductor substrate |
May. 8, 1990 |
| 4650543 |
Method of forming electrode pattern of semiconductor device |
Mar. 17, 1987 |
| 4429452 |
Method of manufacturing field-effect transistors with self-aligned grid and transistors thus obtained |
Feb. 7, 1984 |
| 4312112 |
Method of making field-effect transistors with micron and submicron gate lengths |
Jan. 26, 1982 |
| 4282043 |
Process for reducing the interdiffusion of conductors and/or semiconductors in contact with each other |
Aug. 4, 1981 |
| 4179533 |
Multi-refractory films for gallium arsenide devices |
Dec. 18, 1979 |
| 4157268 |
Localized oxidation enhancement for an integrated injection logic circuit |
Jun. 5, 1979 |
| 4033810 |
Method for making avalanche semiconductor amplifier |
Jul. 5, 1977 |
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