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Class Information
Number: 438/575
Name: Semiconductor device manufacturing: process > Forming schottky junction (i.e., semiconductor-conductor rectifying junction contact) > Compound semiconductor > Multilayer electrode > Using platinum group metal (i.e., platinum (pt), palladium (pd), rodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof)
Description: Processes for forming a contact using a platinum group metals (i.e., platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Rh), iridium (Ir), osmium (Os), or alloy thereof).

Patents under this class:
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Patent Number Title Of Patent Date Issued
8487396 Trench sidewall contact Schottky photodiode and related method of fabrication Jul. 16, 2013
8440553 Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate and in a semiconductor device May. 14, 2013
8350290 Light-receiving device and manufacturing method for a light-receiving device Jan. 8, 2013
8338241 Method of manufacturing high frequency device structure Dec. 25, 2012
8092721 Deposition of ternary oxide films containing ruthenium and alkali earth metals Jan. 10, 2012
7935620 Method for forming semiconductor devices with low leakage Schottky contacts May. 3, 2011
7923362 Method for manufacturing a metal-semiconductor contact in semiconductor components Apr. 12, 2011
7902055 Method of manufacturing a dual metal Schottky diode Mar. 8, 2011
7642121 LED bonding structures and methods of fabricating LED bonding structures Jan. 5, 2010
7553746 Method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material Jun. 30, 2009
7514344 Lateral bipolar transistor Apr. 7, 2009
7470605 Method for fabrication of a MOS transistor Dec. 30, 2008
7393785 Methods and apparatus for forming rhodium-containing layers Jul. 1, 2008
7378310 Method for manufacturing a memory device having a nanocrystal charge storage region May. 27, 2008
7226861 Methods and apparatus for forming rhodium-containing layers Jun. 5, 2007
7141498 Method of forming an ohmic contact in wide band semiconductor Nov. 28, 2006
7064408 Schottky barrier diode and method of making the same Jun. 20, 2006
7056841 Method for fabricating semiconductor device Jun. 6, 2006
6927166 Method for manufacturing semiconductor devices and integrated circuit capacitors whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed Aug. 9, 2005
6852612 Semiconductor device and method for fabricating the same Feb. 8, 2005
6846731 Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films Jan. 25, 2005
6825073 Schottky diode with high field breakdown and low reverse leakage current Nov. 30, 2004
6734086 Semiconductor integrated circuit device and method of manufacturing the same May. 11, 2004
6683001 Method for manufacturing a semiconductor device whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed Jan. 27, 2004
6667196 Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method Dec. 23, 2003
6656823 Semiconductor device with schottky contact and method for forming the same Dec. 2, 2003
6576481 Method of manufacturing semiconductor devices Jun. 10, 2003
6576524 Method of making a prismatic capacitor Jun. 10, 2003
6448162 Method for producing schottky diodes Sep. 10, 2002
6388272 W/WC/TAC ohmic and rectifying contacts on SiC May. 14, 2002
6271131 Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers Aug. 7, 2001
6268230 Semiconductor light emitting device Jul. 31, 2001
6229193 Multiple stage high power diode May. 8, 2001
6184564 Schottky diode with adjusted barrier height and process for its manufacture Feb. 6, 2001
6150246 Method of making Os and W/WC/TiC ohmic and rectifying contacts on SiC Nov. 21, 2000
6087702 Rare-earth schottky diode structure Jul. 11, 2000
6033929 Method for making II-VI group compound semiconductor device Mar. 7, 2000
5908307 Fabrication method for reduced-dimension FET devices Jun. 1, 1999
5888891 Process for manufacturing a schottky diode with enhanced barrier height and high thermal stability Mar. 30, 1999
5610098 N-INP Schottky diode structure and a method of making the same Mar. 11, 1997
5517054 N-InP Schottky diode structure and a method of making the same May. 14, 1996
5459087 Method of fabricating a multi-layer gate electrode with annealing step Oct. 17, 1995
5432126 Fabrication process of compound semiconductor device comprising L-shaped gate electrode Jul. 11, 1995
5270228 Method of fabricating gate electrode in recess Dec. 14, 1993
4923827 T-type undercut electrical contact process on a semiconductor substrate May. 8, 1990
4650543 Method of forming electrode pattern of semiconductor device Mar. 17, 1987
4429452 Method of manufacturing field-effect transistors with self-aligned grid and transistors thus obtained Feb. 7, 1984
4312112 Method of making field-effect transistors with micron and submicron gate lengths Jan. 26, 1982
4282043 Process for reducing the interdiffusion of conductors and/or semiconductors in contact with each other Aug. 4, 1981
4179533 Multi-refractory films for gallium arsenide devices Dec. 18, 1979

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