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Class Information
Number: 438/573
Name: Semiconductor device manufacturing: process > Forming schottky junction (i.e., semiconductor-conductor rectifying junction contact) > Compound semiconductor > Multilayer electrode
Description: Processes wherein the contact is composed of plural layers.










Sub-classes under this class:

Class Number Class Name Patents
438/574 T-shaped electrode 124
438/575 Using platinum group metal (i.e., platinum (pt), palladium (pd), rodium (rh), ruthenium (ru), iridium (ir), osmium (os), or alloy thereof) 52


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
6551911 Method for producing Schottky diodes and Schottky diodes Apr. 22, 2003
6483164 Schottky barrier diode Nov. 19, 2002
6479843 Single supply HFET with temperature compensation Nov. 12, 2002
6455403 Shallow trench contact structure to solve the problem of schottky diode leakage Sep. 24, 2002
6448162 Method for producing schottky diodes Sep. 10, 2002
6420283 methods for producing compound semiconductor substrates and light emitting elements Jul. 16, 2002
6372613 Method of manufacturing a gate electrode with low resistance metal layer remote from a semiconductor Apr. 16, 2002
6355571 Method and apparatus for reducing copper oxidation and contamination in a semiconductor device Mar. 12, 2002
6316342 Low turn-on voltage indium phosphide Schottky device and method Nov. 13, 2001
6287946 Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers Sep. 11, 2001
6274489 Manufacturing method of semiconductor apparatus Aug. 14, 2001
6268230 Semiconductor light emitting device Jul. 31, 2001
6229193 Multiple stage high power diode May. 8, 2001
6225200 Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby May. 1, 2001
6200885 III-V semiconductor structure and its producing method Mar. 13, 2001
6187657 Dual material gate MOSFET technique Feb. 13, 2001
6090679 Method for forming a crown capacitor Jul. 18, 2000
6033929 Method for making II-VI group compound semiconductor device Mar. 7, 2000
5994753 Semiconductor device and method for fabricating the same Nov. 30, 1999
5956568 Methods of fabricating and contacting ultra-small semiconductor devices Sep. 21, 1999
5925902 Semiconductor device having a schottky film with a vertical gap formed therein Jul. 20, 1999
5804475 Method of forming an interband lateral resonant tunneling transistor Sep. 8, 1998
5789311 Manufacturing method of SiC Schottky diode Aug. 4, 1998
5693560 Semiconductor device electrode Dec. 2, 1997
5665618 Method of forming an interband lateral resonant tunneling transistor with single narrow gate electrode Sep. 9, 1997
5622877 Method for making high-voltage high-speed gallium arsenide power Schottky diode Apr. 22, 1997
5567647 Method for fabricating a gate electrode structure of compound semiconductor device Oct. 22, 1996
5550068 Process of fabricating a circuit element for transmitting microwave signals Aug. 27, 1996
5498572 Method of manufacturing semiconductor device Mar. 12, 1996
5484740 Method of manufacturing a III-V semiconductor gate structure Jan. 16, 1996
5447874 Method for making a semiconductor device comprising a dual metal gate using a chemical mechanical polish Sep. 5, 1995
5432125 Method of manufacturing semiconductor device Jul. 11, 1995
5432126 Fabrication process of compound semiconductor device comprising L-shaped gate electrode Jul. 11, 1995
5322806 Method of producing a semiconductor device using electron cyclotron resonance plasma CVD and substrate biasing Jun. 21, 1994
5221638 Method of manufacturing a Schottky barrier semiconductor device Jun. 22, 1993
5187111 Method of manufacturing Schottky barrier gate FET Feb. 16, 1993
5158909 Method of fabricating a high voltage, high speed Schottky semiconductor device Oct. 27, 1992
5135878 Schottky diode Aug. 4, 1992
5106771 GaAs MESFETs with enhanced Schottky barrier Apr. 21, 1992
5079596 Schottky diode Jan. 7, 1992
5045497 Method of making a schottky electrode Sep. 3, 1991
5030589 Production method for a semiconductor device Jul. 9, 1991
5006483 Fabrication of P-N junction semiconductor device Apr. 9, 1991
4954852 Sputtered metallic silicide gate for GaAs integrated circuits Sep. 4, 1990
4951121 Semiconductor device with a 3-ply gate electrode Aug. 21, 1990
4923823 Method of fabricating a self aligned semiconductor device May. 8, 1990
4892835 Method of manufacturing a field effect transistor Jan. 9, 1990
4871687 Method of fabricating a MESFET transistor with gate spaced above source electrode by layer of air or the like Oct. 3, 1989
4871419 Method of forming pattern of a two-layer metal film Oct. 3, 1989
4833042 Nonalloyed ohmic contacts for n type gallium arsenide May. 23, 1989

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