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Class Information
Number: 438/571
Name: Semiconductor device manufacturing: process > Forming schottky junction (i.e., semiconductor-conductor rectifying junction contact) > Combined with formation of ohmic contact to semiconductor region
Description: Processes additionally having a method for the formation of an ohmic contact to a semiconductor region.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7618884 |
Method and device with durable contact on silicon carbide |
Nov. 17, 2009 |
| 7560323 |
Compound semiconductor device and method of fabricating the same |
Jul. 14, 2009 |
| 7544593 |
Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof |
Jun. 9, 2009 |
| 7479444 |
Method for forming Schottky diodes and ohmic contacts in the same integrated circuit |
Jan. 20, 2009 |
| 7419862 |
Method of fabricating pseudomorphic high electron mobility transistor |
Sep. 2, 2008 |
| 7368371 |
Silicon carbide Schottky diode and method of making the same |
May. 6, 2008 |
| 7274082 |
Chemical sensor using chemically induced electron-hole production at a schottky barrier |
Sep. 25, 2007 |
| 7229903 |
Recessed semiconductor device |
Jun. 12, 2007 |
| 7195996 |
Method of manufacturing silicon carbide semiconductor device |
Mar. 27, 2007 |
| 7172933 |
Recessed polysilicon gate structure for a strained silicon MOSFET device |
Feb. 6, 2007 |
| 7141498 |
Method of forming an ohmic contact in wide band semiconductor |
Nov. 28, 2006 |
| 7125786 |
Method of forming vias in silicon carbide and resulting devices and circuits |
Oct. 24, 2006 |
| 7067361 |
Methods of fabricating silicon carbide metal-semiconductor field effect transistors |
Jun. 27, 2006 |
| 7002187 |
Integrated schottky diode using buried power buss structure and method for making same |
Feb. 21, 2006 |
| 6993828 |
Method for manufacturing metal thin film resistor |
Feb. 7, 2006 |
| 6977208 |
Schottky with thick trench bottom and termination oxide and process for manufacture |
Dec. 20, 2005 |
| 6955978 |
Uniform contact |
Oct. 18, 2005 |
| 6929987 |
Microelectronic device fabrication method |
Aug. 16, 2005 |
| 6902964 |
Methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure |
Jun. 7, 2005 |
| 6887747 |
Method of forming a MISFET having a schottky junctioned silicide |
May. 3, 2005 |
| 6884704 |
Ohmic metal contact and channel protection in GaN devices using an encapsulation layer |
Apr. 26, 2005 |
| 6881655 |
Contact resistances in integrated circuits |
Apr. 19, 2005 |
| 6858522 |
Electrical contact for compound semiconductor device and method for forming same |
Feb. 22, 2005 |
| 6852615 |
Ohmic contacts for high electron mobility transistors and a method of making the same |
Feb. 8, 2005 |
| 6844251 |
Method of forming a semiconductor device with a junction termination layer |
Jan. 18, 2005 |
| 6838744 |
Semiconductor device and manufacturing method thereof |
Jan. 4, 2005 |
| 6838325 |
Method of forming a self-aligned, selectively etched, double recess high electron mobility transistor |
Jan. 4, 2005 |
| 6815351 |
Method for contacting a semiconductor configuration |
Nov. 9, 2004 |
| 6787820 |
Hetero-junction field effect transistor having an InGaAIN cap film |
Sep. 7, 2004 |
| 6784017 |
Method of creating a high performance organic semiconductor device |
Aug. 31, 2004 |
| 6770548 |
Trench schottky rectifier |
Aug. 3, 2004 |
| 6762083 |
Method for manufacturing heterojunction field effect transistor device |
Jul. 13, 2004 |
| 6730586 |
Semiconductor device having an overhanging structure and method for fabricating the same |
May. 4, 2004 |
| 6727165 |
Fabrication of metal contacts for deep-submicron technologies |
Apr. 27, 2004 |
| 6699775 |
Manufacturing process for fast recovery diode |
Mar. 2, 2004 |
| 6683362 |
Metal-semiconductor diode clamped complementary field effect transistor integrated circuits |
Jan. 27, 2004 |
| 6649497 |
Method of forming vias in silicon carbide and resulting devices and circuits |
Nov. 18, 2003 |
| 6610999 |
Multiple stage high power diode |
Aug. 26, 2003 |
| 6607955 |
Method of forming self-aligned contacts in a semiconductor device |
Aug. 19, 2003 |
| 6605519 |
Method for thin film lift-off processes using lateral extended etching masks and device |
Aug. 12, 2003 |
| 6544674 |
Stable electrical contact for silicon carbide devices |
Apr. 8, 2003 |
| 6541319 |
Method of manufacturing a self-aligned gate transistor with P-type impurities selectively implanted below the gate, source and drain electrodes |
Apr. 1, 2003 |
| 6486524 |
Ultra low Irr fast recovery diode |
Nov. 26, 2002 |
| 6483164 |
Schottky barrier diode |
Nov. 19, 2002 |
| 6479843 |
Single supply HFET with temperature compensation |
Nov. 12, 2002 |
| 6475889 |
Method of forming vias in silicon carbide and resulting devices and circuits |
Nov. 5, 2002 |
| 6465804 |
High power bipolar transistor with emitter current density limiter |
Oct. 15, 2002 |
| 6458675 |
Semiconductor device having a plasma-processed layer and method of manufacturing the same |
Oct. 1, 2002 |
| 6455403 |
Shallow trench contact structure to solve the problem of schottky diode leakage |
Sep. 24, 2002 |
| 6444553 |
Junction formation with diffusion barrier for silicide contacts and method for forming |
Sep. 3, 2002 |
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