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Class Information
Number: 438/566
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Diffusing a dopant > From vapor phase > Plural diffusion stages
Description: Processes wherein the diffusion is carried out in multiple stages.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7018728 |
Boron phosphide-based semiconductor device and production method thereof |
Mar. 28, 2006 |
| 6825104 |
Semiconductor device with selectively diffused regions |
Nov. 30, 2004 |
| 6770540 |
Method of fabricating semiconductor device having L-shaped spacer |
Aug. 3, 2004 |
| 6632721 |
Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains |
Oct. 14, 2003 |
| 6516743 |
Method and apparatus diffusing zinc into groups III-V compound semiconductor crystals |
Feb. 11, 2003 |
| 6413844 |
Safe arsenic gas phase doping |
Jul. 2, 2002 |
| 6214708 |
Method and apparatus for diffusing zinc into groups III-V compound semiconductor crystals |
Apr. 10, 2001 |
| 6194259 |
Forming retrograde channel profile and shallow LLDD/S-D extensions using nitrogen implants |
Feb. 27, 2001 |
| 6090690 |
Direct gas-phase doping of semiconductor wafers using an organic dopant source |
Jul. 18, 2000 |
| 5824596 |
POCl.sub.3 process flow for doping polysilicon without forming oxide pillars or gate oxide shorts |
Oct. 20, 1998 |
| 5599735 |
Method for doped shallow junction formation using direct gas-phase doping |
Feb. 4, 1997 |
| 5543356 |
Method of impurity doping into semiconductor |
Aug. 6, 1996 |
| 5506186 |
Method of manufacturing an optoelectronic device |
Apr. 9, 1996 |
| 5489550 |
Gas-phase doping method using germanium-containing additive |
Feb. 6, 1996 |
| 5418184 |
Method of manufacturing a semiconductor device in which dopant atoms are provided in a semiconductor body |
May. 23, 1995 |
| 5401686 |
Method of uniformly diffusing impurities into semiconductor wafers |
Mar. 28, 1995 |
| 5387545 |
Impurity diffusion method |
Feb. 7, 1995 |
| 5324684 |
Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure |
Jun. 28, 1994 |
| 5316977 |
Method of manufacturing a semiconductor device comprising metal silicide |
May. 31, 1994 |
| 5308789 |
Method of preparing diffused silicon device substrate |
May. 3, 1994 |
| 5208185 |
Process for diffusing boron into semiconductor wafers |
May. 4, 1993 |
| 5098851 |
Fabricating a semiconductor photodetector by annealing to smooth the PN junction |
Mar. 24, 1992 |
| 4939103 |
Method of diffusing plurality of dopants simultaneously from vapor phase into semiconductor substrate |
Jul. 3, 1990 |
| 4820656 |
Method for producing a p-doped semiconductor region in an n-conductive semiconductor body |
Apr. 11, 1989 |
| 4588454 |
Diffusion of dopant into a semiconductor wafer |
May. 13, 1986 |
| 4514440 |
Spin-on dopant method |
Apr. 30, 1985 |
| 4381213 |
Partial vacuum boron diffusion process |
Apr. 26, 1983 |
| 4313773 |
Method for removing borosilicate and boron rich oxides from a silicon body prior to doping silicon bodies with a SiB.sub.6 solid source |
Feb. 2, 1982 |
| 4280858 |
Method of manufacturing a semiconductor device by retarding the diffusion of zinc or cadmium into a device region |
Jul. 28, 1981 |
| 4266990 |
Process for diffusion of aluminum into a semiconductor |
May. 12, 1981 |
| 4264381 |
Fabrication of injection lasers utilizing a porous host diffusion layer |
Apr. 28, 1981 |
| 4234361 |
Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer |
Nov. 18, 1980 |
| 4049478 |
Utilization of an arsenic diffused emitter in the fabrication of a high performance semiconductor device |
Sep. 20, 1977 |
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