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Class Information
Number: 438/566
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Diffusing a dopant > From vapor phase > Plural diffusion stages
Description: Processes wherein the diffusion is carried out in multiple stages.










Patents under this class:

Patent Number Title Of Patent Date Issued
8441068 Semiconductor device and method for forming the same May. 14, 2013
8435872 Method and apparatus for manufacturing semiconductor device May. 7, 2013
8324062 Method for manufacturing a power semiconductor device Dec. 4, 2012
7959733 Film formation apparatus and method for semiconductor process Jun. 14, 2011
7883998 Vapor phase growth method Feb. 8, 2011
7867904 Method and system for isolated and discretized process sequence integration Jan. 11, 2011
7018728 Boron phosphide-based semiconductor device and production method thereof Mar. 28, 2006
6825104 Semiconductor device with selectively diffused regions Nov. 30, 2004
6770540 Method of fabricating semiconductor device having L-shaped spacer Aug. 3, 2004
6632721 Method of manufacturing semiconductor devices having capacitors with electrode including hemispherical grains Oct. 14, 2003
6516743 Method and apparatus diffusing zinc into groups III-V compound semiconductor crystals Feb. 11, 2003
6413844 Safe arsenic gas phase doping Jul. 2, 2002
6214708 Method and apparatus for diffusing zinc into groups III-V compound semiconductor crystals Apr. 10, 2001
6194259 Forming retrograde channel profile and shallow LLDD/S-D extensions using nitrogen implants Feb. 27, 2001
6090690 Direct gas-phase doping of semiconductor wafers using an organic dopant source Jul. 18, 2000
5824596 POCl.sub.3 process flow for doping polysilicon without forming oxide pillars or gate oxide shorts Oct. 20, 1998
5599735 Method for doped shallow junction formation using direct gas-phase doping Feb. 4, 1997
5543356 Method of impurity doping into semiconductor Aug. 6, 1996
5506186 Method of manufacturing an optoelectronic device Apr. 9, 1996
5489550 Gas-phase doping method using germanium-containing additive Feb. 6, 1996
5418184 Method of manufacturing a semiconductor device in which dopant atoms are provided in a semiconductor body May. 23, 1995
5401686 Method of uniformly diffusing impurities into semiconductor wafers Mar. 28, 1995
5387545 Impurity diffusion method Feb. 7, 1995
5324684 Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure Jun. 28, 1994
5316977 Method of manufacturing a semiconductor device comprising metal silicide May. 31, 1994
5308789 Method of preparing diffused silicon device substrate May. 3, 1994
5208185 Process for diffusing boron into semiconductor wafers May. 4, 1993
5098851 Fabricating a semiconductor photodetector by annealing to smooth the PN junction Mar. 24, 1992
4939103 Method of diffusing plurality of dopants simultaneously from vapor phase into semiconductor substrate Jul. 3, 1990
4820656 Method for producing a p-doped semiconductor region in an n-conductive semiconductor body Apr. 11, 1989
4588454 Diffusion of dopant into a semiconductor wafer May. 13, 1986
4514440 Spin-on dopant method Apr. 30, 1985
4381213 Partial vacuum boron diffusion process Apr. 26, 1983
4313773 Method for removing borosilicate and boron rich oxides from a silicon body prior to doping silicon bodies with a SiB.sub.6 solid source Feb. 2, 1982
4280858 Method of manufacturing a semiconductor device by retarding the diffusion of zinc or cadmium into a device region Jul. 28, 1981
4266990 Process for diffusion of aluminum into a semiconductor May. 12, 1981
4264381 Fabrication of injection lasers utilizing a porous host diffusion layer Apr. 28, 1981
4234361 Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer Nov. 18, 1980
4049478 Utilization of an arsenic diffused emitter in the fabrication of a high performance semiconductor device Sep. 20, 1977











 
 
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