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Class Information
Number: 438/564
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Diffusing a dopant > From solid dopant source in contact with semiconductor region > Polycrystalline semiconductor source
Description: Processes wherein the solid dopant source material is composed of a multicrystalline semiconductor (i.e., polysilicon).










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
4464212 Method for making high sheet resistivity resistors Aug. 7, 1984
4426234 Method of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealing Jan. 17, 1984
4414737 Production of Schottky barrier diode Nov. 15, 1983
4404737 Method for manufacturing a semiconductor integrated circuit utilizing polycrystalline silicon deposition, oxidation and etching Sep. 20, 1983
4403392 Method of manufacturing a semiconductor device Sep. 13, 1983
4389255 Method of forming buried collector for bipolar transistor in a semiconductor by selective implantation of poly-si followed by oxidation and etch-off Jun. 21, 1983
4375999 Method of manufacturing a semiconductor device Mar. 8, 1983
4354309 Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon Oct. 19, 1982
4341009 Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate Jul. 27, 1982
4305760 Polysilicon-to-substrate contact processing Dec. 15, 1981
4301588 Consumable amorphous or polysilicon emitter process Nov. 24, 1981
4274892 Dopant diffusion method of making semiconductor products Jun. 23, 1981
4239559 Method for fabricating a semiconductor device by controlled diffusion between adjacent layers Dec. 16, 1980
4231820 Method of making a silicon diode array target Nov. 4, 1980
4209350 Method for forming diffusions having narrow dimensions utilizing reactive ion etching Jun. 24, 1980
4199386 Method of diffusing aluminum into monocrystalline silicon Apr. 22, 1980
4164436 Process for preparation of semiconductor devices utilizing a two-step polycrystalline deposition technique to form a diffusion source Aug. 14, 1979
4127931 Semiconductor device Dec. 5, 1978
4124934 Manufacture of semiconductor devices in which a doping impurity is diffused from a polycrystalline semiconductor layer into an underlying monocrystalline semiconductor material, and semiconduc Nov. 14, 1978
4074304 Semiconductor device having a miniature junction area and process for fabricating same Feb. 14, 1978
4069067 Method of making a semiconductor device Jan. 17, 1978
4063967 Method of producing a doped zone of one conductivity type in a semiconductor body utilizing an ion-implanted polycrystalline dopant source Dec. 20, 1977
4063901 Method of manufacturing a semiconductor device Dec. 20, 1977
4029527 Method of producing a doped zone of a given conductivity type in a semiconductor body Jun. 14, 1977
4004954 Method of selective growth of microcrystalline silicon Jan. 25, 1977
3940288 Method of making a semiconductor device Feb. 24, 1976

1 2 3 4 5










 
 
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