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Class Information
Number: 438/560
Name: Semiconductor device manufacturing: process > Introduction of conductivity modifying dopant into semiconductive material > Diffusing a dopant > From solid dopant source in contact with semiconductor region > Plural diffusion stages
Description: Processes wherein the diffusion is carried out in multiple stages.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8603900 Reducing surface recombination and enhancing light trapping in solar cells Dec. 10, 2013
7999268 Low temperature impurity doping of silicon carbide Aug. 16, 2011
7790574 Boron diffusion in silicon devices Sep. 7, 2010
7709365 CMOS well structure and method of forming the same May. 4, 2010
7326596 High voltage power device with low diffusion pipe resistance Feb. 5, 2008
7026230 Method for fabricating a memory device Apr. 11, 2006
6984565 Method of manufacturing a semiconductor device Jan. 10, 2006
6875676 Methods for producing a highly doped electrode for a field effect transistor Apr. 5, 2005
6825104 Semiconductor device with selectively diffused regions Nov. 30, 2004
6821875 Low area metal contacts for photovoltaic devices Nov. 23, 2004
6815229 In situ monitoring of sheet resistivity of silicides during rapid thermal annealing using electrical methods Nov. 9, 2004
6642119 Silicide MOSFET architecture and method of manufacture Nov. 4, 2003
6461947 Photovoltaic device and making of the same Oct. 8, 2002
6458693 Method of manufacturing a semiconductor device Oct. 1, 2002
6380055 Dopant diffusion-retarding barrier region formed within polysilicon gate layer Apr. 30, 2002
6365493 Method for antimony and boron doping of spherical semiconductors Apr. 2, 2002
6340535 Method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device Jan. 22, 2002
6329273 Solid-source doping for source/drain to eliminate implant damage Dec. 11, 2001
6300228 Multiple precipitation doping process Oct. 9, 2001
6238986 Formation of junctions by diffusion from a doped film at silicidation May. 29, 2001
6200872 Semiconductor substrate processing method Mar. 13, 2001
6180457 Method of manufacturing non-volatile memory device Jan. 30, 2001
5902135 Method for removing crystal defects in silicon wafers May. 11, 1999
5801087 Method of forming improved contacts from polysilicon to siliconor other polysilicon layers Sep. 1, 1998
5786605 Semiconductor device produced by a single furnace cycle diffusion and oxidation process Jul. 28, 1998
5753530 Impurity doping method with diffusion source of boron-silicide film May. 19, 1998
5624867 Low temperature formation of palladium silicided shallow junctions using implant through metal/silicide technology Apr. 29, 1997
5543356 Method of impurity doping into semiconductor Aug. 6, 1996
5510271 Processes for producing low cost, high efficiency silicon solar cells Apr. 23, 1996
5496744 Method of fabricating complementary poly emitter transistors Mar. 5, 1996
5494852 High capacity semiconductor dopant deposition/oxidization process using a single furnace cycle Feb. 27, 1996
5476799 Process for preparing semiconductor device using a tunnel oxidized layer Dec. 19, 1995
5472909 Method for the preparation of discrete substrate plates of semiconductor silicon wafer Dec. 5, 1995
5418184 Method of manufacturing a semiconductor device in which dopant atoms are provided in a semiconductor body May. 23, 1995
5316977 Method of manufacturing a semiconductor device comprising metal silicide May. 31, 1994
5278097 Method of making doped silicon spheres Jan. 11, 1994
5244831 Method of doping a polysilicon layer on a semiconductor wafer Sep. 14, 1993
5217539 III-V solar cells and doping processes Jun. 8, 1993
5173440 Method of fabricating a semiconductor device by reducing the impurities Dec. 22, 1992
5171708 Method of boron diffusion into semiconductor wafers having reduced stacking faults Dec. 15, 1992
4963509 Gold diffusion method for semiconductor devices of high switching speed Oct. 16, 1990
4925812 Platinum diffusion process May. 15, 1990
4843033 Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source Jun. 27, 1989
4757031 Method for the manufacture of a pn-junction having high dielectric strength Jul. 12, 1988
4725564 Method of manufacturing a semiconductor device, in which a dopant is diffused from its oxide into a semiconductor body Feb. 16, 1988
4629520 Method of forming shallow n-type region with arsenic or antimony and phosphorus Dec. 16, 1986
4605451 Process for making thyristor devices Aug. 12, 1986
4521441 Plasma enhanced diffusion process Jun. 4, 1985
4514440 Spin-on dopant method Apr. 30, 1985
4490192 Stable suspensions of boron, phosphorus, antimony and arsenic dopants Dec. 25, 1984

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